Abstract:
Disclosed is a semiconductor device having a memory cell which comprises a transistor having a control gate and a storage gate. The storage gate comprises an oxide semiconductor and is able to be a conductor and an insulator depending on the potential of the storage gate and the potential of the control gate. Data is written by setting the potential of the control gate to allow the storage gate to be a conductor, supplying a potential of data to be stored to the storage gate, and setting the potential of the control gate to allow the storage gate to be an insulator. Data is read by supplying a potential for reading to a read signal line connected to one of a source and a drain of the transistor and detecting the change in potential of a bit line connected to the other of the source and the drain.
Abstract:
A circuit capable of keeping input impedance constant is provided. Further, a circuit which can contribute to improvement in power feeding efficiency in power feeding by a magnetic resonance method is provided. A voltage (a former voltage) proportional to a direct-current voltage input to a DC-DC converter from the outside and a voltage (a latter voltage) proportional to a current input from the outside are detected, and the ratio of the former voltage and the latter voltage are held constant. Accordingly, input impedance can be kept constant. Further, impedance conversion is performed in the DC-DC converter. Thus, even when the battery in which power feeding is performed exists on an output side of the DC-DC converter, input impedance can be kept constant. Consequently, power can be supplied to a power receiving device including the DC-DC converter and the battery with high power feeding efficiency by a magnetic resonance method.