Abstract:
Photolithographic alignment marks (e.g., mask and measurement overlay marks) are formed of a pattern of very small marks using the design configuration and rule of a circuit pattern feature. A relatively large mark comprising a pattern of small marks modeled after the circuit pattern feature results in an etch rate within the mark area that is substantially the same as the etch rate in the circuit pattern (e.g., cell or peripheral circuit) area. This allows for simultaneous formation of circuit pattern features, and the alignment marks, in a common etching step, while avoiding underetching (shallow etch depth) due to a microloading effect. In this manner, proper formation of readily detectible marks is ensured.
Abstract:
Photolithographic alignment marks (e.g., mask and measurement overlay marks) are formed of a pattern of very small marks using the design configuration and rule of a circuit pattern feature. A relatively large mark comprising a pattern of small marks modeled after the circuit pattern feature results in an etch rate within the mark area that is substantially the same as the etch rate in the circuit pattern (e.g., cell or peripheral circuit) area. This allows for simultaneous formation of circuit pattern features, and the alignment marks, in a common etching step, while avoiding underetching (shallow etch depth) due to a microloading effect. In this manner, proper formation of readily detectible marks is ensured.
Abstract:
According to this invention, there is provided a charged particle detection device including a semiconductor substrate, an insulating film formed on the semiconductor substrate, an electrode formed on the insulating film, a member for forming a potential well, which is constituted by a depletion layer, near a surface of the semiconductor substrate under the electrode, a member for sweeping, into the semiconductor substrate, charges which are generated in the semiconductor substrate by charged particles incident from the electrode and are stored in the potential well, and a member for detecting signal charges generated by the charged particles swept into the semiconductor substrate.
Abstract:
A surface-mounted-type inductance element comprising a coil structure having a bobbin; the bobbin including a portion around which wires are coiled, a pair of flanges integrally formed at opposing ends of the bobbin, a pair of bases integrally formed at lower edge portions of the flanges in a manner to project laterally from the flanges, and a plurality of external terminals attached to each of the bases in a manner to penetrate the base, each the external terminal including a first portion projecting laterally from the base and a second portion projecting downward from the base, around which first portion of each the external terminal a termination of any one of the wires is wound; a mold covering the coil structure in a manner to allow the second portions of the external terminals to be projected outward from the mold, the mold being formed of resin material exhibiting heat resistance; and a pair of cores assembled to the coil structure through the mold.
Abstract:
The new structure of a ferrite core for the use of a power transformer and/or a choke coil has been found. The core is assembled by a pair of identical core halves, and each of core half comprises (a) a circular center boss(12), (b) a pair of outer walls(14,16) positioned at both the sides of said boss(12) so that a fan-shaped empty space is provided between the circular boss(12) and a pair of outer walls(14,16) for mounting a coil, (c) a pair of base plates(18,20) coupling said boss(12) with said outer walls(14,16) at the extreme end of those members so that those members conform substantially with the E-shaped structure, (d) the other extreme end of said boss(12), the outer walls(14,16) and the base plates(18,20) residing on a single plane, (e) each of said outer walls(14,16) being essentially rectangular with the external linear wall and the inner curved wall which is coaxial with the circular boss(12), and the width(d.sub.2) of said external linear wall is larger than the diameter(d.sub.3) of the circular boss(12), (f) each of said base plates(18,20) being essentially in the sector shaped having a pair of tapers which are gradually opened towards the outer walls(14,16), (g) the area(S.sub.3) coupling the base plates(18,20) with the outer walls(14,16) being larger than the half of the cross sectional area(1/4.pi.d.sub.3.sup.2) of the boss(12), (h) the area(S.sub.2) coupling the boss(12) with the base plates(18,20) being substantially the same as half of the cross sectional area(1/4.pi.d.sub.3.sup.2) of the boss(12), and (i) the area(S.sub.1) of the cross section of each of the outer walls(14,16) being essentially the same as half of the cross sectional area(1/4.pi.d.sub.3.sup.2) of the boss(12).
Abstract translation:已经发现用于使用电力变压器和/或扼流线圈的铁氧体磁心的新结构。 芯部由一对相同的半部组装,每个芯部半部包括(a)圆形中心凸台(12),(b)一对外壁(14,16),其位于所述凸台的两侧 (12),使得在所述圆形凸台(12)和用于安装线圈的一对外壁(14,16)之间设置扇形空的空间,(c)一对基板(18,20),其联接 所述凸台(12)具有位于这些构件的最前端的所述外壁(14,16),使得这些构件基本上符合E形结构,(d)所述凸台(12)的另一端, 壁(14,16)和位于单个平面上的基板(18,20),(e)每个所述外壁(14,16)基本上是矩形的,外部线性壁和内部弯曲壁是同轴的 与圆形凸台(12)的宽度(d2)大于圆形凸台(12)的直径(d3),(f)每个所述基板(18,20)基本上是 在扇形形状 朝向外壁(14,16)逐渐打开的一对锥体,(g)将基板(18,20)与外壁(14,16)联接的区域(S3)大于 凸台(12)的横截面积(1/4 pi d32),(h)将凸台(12)与基板(18,20)联接的区域(S2)基本上与十字架的一半相同 凸台(12)的截面面积(1/4 pi d32),和(i)每个外壁(14,16)的横截面的面积(S1)基本上与横截面的一半相同 凸台(12)的面积(1/4 pi d32)。
Abstract:
A pattern defect inspection method includes generating electron beam irradiation point track data on the basis of first data on an inspection target pattern, irradiating the electron beam to the inspection target pattern in accordance with the electron beam irradiation point track data, detecting secondary electrons generated from the inspection target pattern due to the irradiation of the electron beam, acquiring second data regarding a signal intensity of the secondary electrons from a signal of the detected secondary electrons, and detecting an abnormal point from the second data and outputting the abnormal point as a defect of the inspection target pattern. The electron beam irradiation point track data includes data on a track of irradiation points of an electron beam to the inspection target pattern and is intended to control over scanning with the electron beam, the electron beam irradiation point track data.
Abstract:
A pattern evaluation method includes: acquiring data of a design pattern for an evaluation pattern to detect a first edge of the design pattern; acquiring an image of the evaluation pattern to detect a second edge of the evaluation pattern; dividing the first edge into first linear parts and first corner parts; performing matching of the first and second edges to obtain correspondence between the first and second edges; dividing the second edge into second linear parts and second corner parts based on the correspondence between the first and second edges; and evaluating the evaluation pattern based on at least one of the second linear parts and the second corner parts.
Abstract:
A pattern misalignment measurement method includes acquiring an inspection image of a composite pattern formed by superposing a plurality of kinds of element patterns on each other, acquiring reference images of at least two kinds of element patterns from reference images which are images of reference patterns of the plurality of kinds of element patterns, performing first matching of each of the acquired reference images with the inspection image, and outputting misalignment between the element patterns in the composite pattern on the basis of the result of the first matching.
Abstract:
A pattern edge detecting method includes: detecting edge points in an image of an inspection pattern acquired from an imaging device; generating a plurality of edge lines from the edge points using a grouping process; generating a plurality of edge line group pairs, each composed of a combination of first and second edge line groups to be a candidate of any of one and the other of an outside edge and an inside edge of the inspection pattern, the generated edge lines being divided into two parts in different manners; performing shape matching between the first and second edge line groups for each edge line group pair; and specifying, as an edge of the inspection pattern, one of the first and second edge line groups constituting the edge line group pair whose matching score is best of matching scores of the edge line group pairs obtained during the shape matching.