公开(公告)号：US20210358811A1

公开(公告)日：2021-11-18

申请号：US17391220

申请日：2021-08-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shao-Jyun Wu ,  Hung-Chi Wu ,  Chia-Ching Lee ,  Pin-Hsuan Yeh ,  Hung-Chin Chung ,  Hsien-Ming Lee ,  Chien-Hao Chen ,  Sheng-Liang Pan ,  Huan-Just Lin

IPC: H01L21/8234 ,  H01L29/78 ,  H01L29/66 ,  H01L29/417 ,  H01L21/02

Abstract: An improved work function layer and a method of forming the same are disclosed. In an embodiment, the method includes forming a semiconductor fin extending from a substrate; depositing a dielectric layer over the semiconductor fin; depositing a first work function layer over the dielectric layer; and exposing the first work function layer to a metastable plasma of a first reaction gas, a metastable plasma of a generation gas, and a metastable plasma of a second reaction gas, the first reaction gas being different from the second reaction gas.

公开(公告)号：US20210327761A1

公开(公告)日：2021-10-21

申请号：US17365057

申请日：2021-07-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chung-Chiang Wu ,  Hung-Chin Chung ,  Hsien-Ming Lee ,  Chien-Hao Chen ,  Ching-Hwanq Su

IPC: H01L21/8234 ,  H01L27/088

Abstract: Semiconductor devices and methods of manufacturing semiconductor devices with differing threshold voltages are provided. In embodiments the threshold voltages of individual semiconductor devices are tuned through the removal and placement of differing materials within each of the individual gate stacks within a replacement gate process, whereby the removal and placement helps keep the overall process window for a fill material large enough to allow for a complete fill.

公开(公告)号：US11081396B2

公开(公告)日：2021-08-03

申请号：US16568518

申请日：2019-09-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shao-Jyun Wu ,  Hung-Chi Wu ,  Chia-Ching Lee ,  Pin-Hsuan Yeh ,  Hung-Chin Chung ,  Hsien-Ming Lee ,  Chien-Hao Chen ,  Sheng-Liang Pan ,  Huan-Just Lin

IPC: H01L21/8234 ,  H01L29/78 ,  H01L29/66 ,  H01L29/417 ,  H01L21/02

Abstract: An improved work function layer and a method of forming the same are disclosed. In an embodiment, the method includes forming a semiconductor fin extending from a substrate; depositing a dielectric layer over the semiconductor fin; depositing a first work function layer over the dielectric layer; and exposing the first work function layer to a metastable plasma of a first reaction gas, a metastable plasma of a generation gas, and a metastable plasma of a second reaction gas, the first reaction gas being different from the second reaction gas.

公开(公告)号：US20210098301A1

公开(公告)日：2021-04-01

申请号：US17120499

申请日：2020-12-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chung-Chiang Wu ,  Hsin-Han Tsai ,  Wei-Chin Lee ,  Chia-Ching Lee ,  Hung-Chin Chung ,  Cheng-Lung Hung ,  Da-Yuan Lee

IPC: H01L21/8234 ,  H01L21/3213 ,  H01L29/49 ,  H01L27/088 ,  H01L21/28 ,  H01L29/66 ,  H01L27/092 ,  H01L21/8238 ,  H01L29/40

Abstract: Semiconductor devices and methods of manufacturing semiconductor devices with differing threshold voltages are provided. In embodiments the threshold voltages of individual semiconductor devices are tuned through the removal and placement of differing materials within each of the individual gate stacks within a replacement gate process, whereby the removal and placement helps keep the overall process window for a fill material large enough to allow for a complete fill.