公开(公告)号：US20210082846A1

公开(公告)日：2021-03-18

申请号：US16571212

申请日：2019-09-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yung-Chi Lin ,  Chen-Hua Yu ,  Tsang-Jiuh Wu ,  Wen-Chih Chiou

IPC: H01L23/00 ,  H01L23/367 ,  H01L23/48 ,  H01L23/535 ,  H01L23/522 ,  H01L23/528 ,  H01L25/065 ,  H01L25/00

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a semiconductor substrate, an interconnection structure, a through substrate via, an insulating layer, a conductive pillar, a dummy conductive pillar, a passivation layer and a bonding pad. The interconnection structure is disposed over the semiconductor substrate. The through substrate via at least partially extends in the semiconductor substrate along a thickness direction of the semiconductor substrate, and electrically connects to the interconnection structure. The insulating layer is disposed over the interconnection structure. The conductive pillar is disposed in the insulating layer, and electrically connected to the through substrate via. The dummy conductive pillar is disposed in the insulating layer, and laterally separated from the conductive pillar. The passivation layer is disposed over the insulating layer. The bonding pad is disposed in the passivation layer, and electrically connected to the conductive pillar.

公开(公告)号：US20200294965A1

公开(公告)日：2020-09-17

申请号：US16354159

申请日：2019-03-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Hao Hsu ,  Chien-Ming Chiu ,  Yung-Chi Lin ,  Tsang-Jiuh Wu ,  Wen-Chih Chiou

IPC: H01L25/065 ,  H01L25/00

Abstract: A die stack structure includes a first die, a dielectric material layer, a first bonding dielectric layer and a second die. The first die has an active surface and a rear surface opposite to the active surface. The first die includes a through-substrate via (TSV) therein. The TSV protrudes from the rear surface of the first die. The dielectric material layer surrounds and wraps around the first die. The first bonding dielectric layer is disposed on a top surface of the dielectric material layer and the rear surface of the first die and covers the TSV, wherein the TSV penetrates through the first bonding dielectric layer. The second die is disposed on the first die and has an active surface and a rear surface opposite to the active surface. The second die has a second bonding dielectric layer and a conductive feature disposed in the second bonding dielectric layer. The first bonding dielectric layer separates the second bonding dielectric layer from the dielectric material layer, and the first die and the second die are bonded through bonding the second bonding dielectric layer with the first bonding dielectric layer and bonding the conductive feature with the TSV.

公开(公告)号：US09922934B2

公开(公告)日：2018-03-20

申请号：US15141836

申请日：2016-04-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Hui Wang ,  Chih-Hung Cheng ,  Yung-Chi Lin ,  Wen-Chih Chiou

IPC: H01L23/544 ,  G03F9/00 ,  H01L21/683 ,  H01L21/3105 ,  H01L23/00

CPC classification number: H01L21/3105 ,  H01L21/6835 ,  H01L24/11 ,  H01L2221/6835 ,  H01L2221/68359 ,  H01L2224/11002 ,  H01L2224/11005

Abstract: A package carrier includes a carrier and a light absorption layer. The light absorption layer is disposed on the carrier. The light absorption layer includes a notch at the periphery of the carrier, and the notch is light transmissive so as to expose the carrier to light in a normal direction of the carrier. A semiconductor manufacturing process is also provided.