摘要:
The present invention provides a ceramic substrate for use in an apparatus for manufacturing and inspecting semiconductors. The ceramic substrate comprises a through-hole having excellent tolerance performance against a drawing stress applied to an external terminal pin. The through-hole is provided with a projection which protrudes into the ceramic substrate made of aluminum nitride as primary component.
摘要:
A rotary anode X-ray tube apparatus according to an embodiment of the present invention includes a stationary shaft, a cooling bath that is provided in the stationary shaft, a rotary cylinder that is rotatably supported to the stationary shaft, a target that is provided in the rotary cylinder, a cathode that is disposed to face the target, and a vacuum enclosure that stores these components. The stationary shaft has a large-diameter portion provided in a portion thereof and is provided with a flow passage through which a cooling fluid flows. The cooling bath is provided by thinning the wall thickness of the large-diameter portion to increase the flow passage diameter of a portion of the flow passage. The rotary cylinder covers an area of the stationary shaft including the large-diameter portion through a liquid metal and is rotatably supported to the stationary shaft. The target has a hollow circular plate shape that is provided on an outer circumferential surface of the rotary cylinder. The vacuum enclosure stores the stationary shaft, the rotary cylinder, the target, and the cathode and supports the stationary shaft.
摘要:
An object of the present invention is to provide an exhaust pipe that can lower the temperature of exhaust gases when the exhaust gases having a high temperature pass through the exhaust pipe. The exhaust pipe of the present invention, which allows exhaust gases to flow through the exhaust pipe, comprises a base that contains metal and has a cylindrical shape; and a surface-coating layer that contains a plurality of crystalline inorganic materials and an amorphous binder and is formed on the outer peripheral face of the base, wherein the plurality of crystalline inorganic materials are distributed in the surface-coating layer, in an accumulative manner in a thickness direction, and the amorphous binder has an average thickness of 20 μm or less at a location nearer the outer peripheral face of the exhaust pipe than a location of the crystalline inorganic materials.
摘要:
An exhaust pipe devised to, at the flow of high-temperature exhaust gas through the exhaust pipe, lower the temperature of the exhaust gas. The exhaust pipe has the following characteristics. The exhaust pipe has a tubular base material of metal and, provided on the outer circumferential surface of the base material, a surface coating layer composed of a crystalline inorganic material and an amorphous binder material. In the surface coating layer, the crystalline inorganic material is distributed in the state of being multiply stacked one upon another in the direction of thickness of the surface coating layer. The average thickness of the amorphous binder material located on the side of outer circumferential surface relative to the crystalline inorganic material is 20 μm or less. The exhaust gas flows through the interior of the pipe.
摘要:
An object of the present invention is to provide an exhaust pipe in which a peeling of a constituent member does not occur and reliability thereof is excellent, and an exhaust pipe allowing exhaust gases to flow through the exhaust pipe of the present invention includes a heat-releasing layer containing a crystalline inorganic material and an amorphous inorganic material and having infrared emissivity higher than infrared emissivity of a base, wherein irregularities are formed on a surface of the base on which the heat-releasing layer is to be formed.
摘要:
A ceramic plate for a semiconductor producing/examining device, including a ceramic substrate having a heating surface for receiving a semiconductor wafer thereon or facing the semiconductor wafer at a given distance apart therefrom. The ceramic substrate has a surface roughness Rmax of about 0.1 to 250 μm according to JIS R 0601, and a difference between a surface roughness of the heating surface and a surface roughness of the bottom surface is 50% or less.
摘要翻译:一种用于半导体制造/检查装置的陶瓷板,包括具有用于在其上接收半导体晶片或面向半导体晶片的加热表面的陶瓷基板,该半导体晶片与该半导体晶片隔开一定距离。 根据JIS R 0601,陶瓷基板的表面粗糙度Rmax为约0.1〜250μm,加热面的表面粗糙度与底面的表面粗糙度之差为50%以下。
摘要:
A temperature controller and temperature control element, whose plate-surface temperature distribution is highly homogeneous, which can be used in a waveguide type optical module. In a waveguide type optical module a temperature control element is supported on a pedestal inside a casing and an optical waveguide is mounted on the temperature control element. The temperature control element includes a plate having a heater or heat absorber provided on the non-heating side thereof or buried therein. The pedestal is provided to support the plate mainly in contact with the non-heating side of the plate. A total area of contact of the pedestal with the plate including an area of contact with the heater or heat absorber is set to over 30% of the area of the non-heating side of the plate and a sum of surface roughness of the pedestal and those of both the plate and heater is set to over 0.05 μm.
摘要:
It is a an object of the present invention to provide a ceramic substrate for a semiconductor producing/examining device which has high fracture toughness value, exellent thermal shock resistivity, high thermal conductivity and an excellent temperature rising and falling properties, and is preferable as a hot plate, an electrostatic chuck, a wafer prober and the like. A ceramic substrate, for a semiconductor producing/examining device, having a conductor formed inside thereof or on the surface thereof of the present invention is the ceramic substrate, wherein said ceramic substrate has been sintered such that a fractured section thereof exhibits intergranular fracture.
摘要:
An object of the present invention is to provide a ceramic heater for a semiconductor producing/examining device which is capable of accurately measuring the temperature of an object to be heated and evenly heating the whole body of a silicon wafer by adjusting the heating state of a heating element based on the temperature measurement result, and the ceramic heater for a semiconductor producing/examining device of the present invention is a ceramic heater including a ceramic substrate and a heating element formed on the surface or the inside of the ceramic substrate, wherein a temperature measurement element is formed while being brought into contact with the ceramic substrate and the surface roughness of the ceramic substrate brought into contact with the temperature measurement element is Ra≦5 μm.
摘要:
A ceramic substrate for semiconductor manufacture and/or inspection which is conducive to decrease in α-rays radiated, to prevent electrical errors, and to decrease an electrostatic chucking force such as heater or wafer prober, generation of particles, and circuit defects. The ceramic substrate is configured such that the level of α-rays radiated from the surface of the ceramic substrate is not higher than 0.250 c/cm2·hr.
摘要翻译:用于半导体制造和/或检查的陶瓷衬底,其有助于减少辐射的α射线,以防止电气错误,并且降低诸如加热器或晶片探针的静电吸附力,产生颗粒和电路缺陷。 陶瓷基板被配置为使得从陶瓷基板的表面辐射的α射线的水平不高于0.250c / cm 2·hr。