Abstract:
An emission structure includes a resistor with at least one emitter tip thereover and at least one substantially vertically oriented conductive element positioned adjacent the resistor. The conductive element may contact the resistor. A method for fabricating the emission structure includes forming at least one conductive line, depositing at least one layer of semiconductive or conductive material over and laterally adjacent the at least one conductive line, and forming a hard mask in recessed areas of the surface of the uppermost material layer. The underlying material layer or layers are patterned through the hard mask, exposing substantially longitudinal center portions of the conductive lines. The remaining semiconductive or conductive material is patterned to form the emitter tip and resistor. At least the substantially central longitudinal portion of the conductive trace is removed to form the conductive element.
Abstract:
A triode structure of a field emission display is manufactured with thick-film technology. The triode structure includes a cathode electrode layer that comprises a metallic catalyst. Isomeric carbon emitters can be grown on the cathode electrode layer by CVD process at a low temperature because of the metallic catalyst. Instead of mixing the metallic catalyst in the cathode electrode layer, a metallic catalyst layer can be formed on the cathode electrode layer to facilitate the growth of the isomeric carbon emitters. The combination of thick film technology and low temperature CVD process provide a low cost method for fabricating a large area field emission display with isomeric carbon emitters.
Abstract:
A method of manufacturing an electron-emitting device has a step of forming a pair of conductors on a substrate, the conductors being spaced from each other, and an activation process of depositing carbon or carbon compound on at least one side of the pair of conductors in an atmosphere of carbon compound gas The activation process includes a plurality of processes of two or more stages including a first process and a second process. The first process is executed in an atmosphere of the carbon compound gas having a partial pressure higher than a partial process of the second process used as a last activation process.
Abstract:
In a method for fabricating a field emission device, a cathode electrode is first formed on a substrate and an emitter having a carbon-based material is formed on the cathode electrode. After an emitter surface treatment agent is deposited on the substrate to cover the emitter, the emitter surface treatment agent and hardened and removed from the substrate such that the carbon-based material contained in the emitter can be exposed out of a surface of the emitter.
Abstract:
A method of fabricating an emitter of a field emission display. A mixture of metal and silver paste with glass material is screen printed on a substrate as a silver electrode. The metal is selected from a hard solder alloy such as Al/Si alloy containing tin, zinc, aluminum or other low melting point metal. Alternatively, the metal and the silver paste with the glass material are separately screen printed on the substrate. The metal is selected from tin, zinc, aluminum, or an alloy with a low melting point such as aluminum/silicon alloy. A carbon nano-tube layer is formed on the silver electrode by coating the carbon nano-tube material with the electric arc. Alternately a catalyst layer can be formed on the silver electrode prior to the formation of the carbon nano-tube layer. A metal layer such as nickel and copper is formed on the carbon nano-tube layer to prevent the carbon nano-tube layer from absorbing gas.
Abstract:
A method of fabricating an electron source includes the steps of fixing a first sealing member to a substrate disposed with an electroconductive member, the first sealing member surrounding the electroconductive member excepting a portion of the electroconductive member, abutting a chamber on the first sealing member to cover the electroconductive member excepting the portion of the electroconductive member and form a hermetically sealed atmosphere between the substrate and the chamber, supplying power to the portion of the electroconductive member to give part of the electroconductive member covered with the chamber an electron-emitting function, and removing the chamber from the substrate.
Abstract:
The present invention provides a method of manufacturing an electron-emitting device, comprising a process for forming a pair of electric conductors spaced from each other on a substrate, and an activation process for forming a film of carbon or a carbon compound on at lease one of the pair of electric conductors, wherein the activation process is sequentially performed within plural containers having different atmospheres.
Abstract:
A field emission display device is disclosed, which has a first substrate; a second substrate coated with at least a layer of phosphor; a first conducting layer locating on one surface of said first substrate; a plurality of connecting-conducting lines; an insulating layer having a plurality of holes; a second conducting layer having a plurality of holes; a plurality of cones having at least one microtip; and a sealing gel sandwiched by said second substrate and said insulating layer. The method for fabricating the field emission display device illustrated above is also disclosed.
Abstract:
A method of forming emitter tips for use in a field emission array is disclosed. The tips are formed by utilizing a polymer residue that forms during the dry etch sharpening step to hold the mask caps in place on the emitter tips. The residue polymer continues to support the mask caps as the tips are over-etched, enabling the tips to be etched past sharp without losing their shape and sharpness. The dry etch utilizes an etchant comprised of fluorine and chlorine gasses. The mask caps and residue polymer are easily removed after etching by washing the wafers in a wash of deionized water, or Buffered Oxide Etch.
Abstract:
A process of forming a field emission electrode for manufacturing a field emission array is provided. The process includes steps of (a) providing a substrate having a metal layer thereon, (b) forming a plurality of mask units on the metal layer and partially removing the metal layer uncovered by the mask units, (c) oxidizing a surface of the remained metal layer by an anodic oxidization method for forming a metal oxide layer thereon such that an upper portion of the unoxidized remained metal layer is in the shape of plural conoids, and (d) removing the remained mask units and the metal oxide layer. Alternatively, the process includes steps of (a) providing a substrate having a first metal layer thereon, (b) forming a plurality of mask units on the first metal layer and partially removing the first metal layer uncovered by the mask units, (c) oxidizing a surface of the remained first metal layer by an anodic oxidization method for forming a metal oxide layer thereon such that an upper portion of the unoxidized remained first metal layer is in the shape of plural cylinders, (d) forming a second metal layer on the metal oxide layer, and (e) removing the remained mask units.