Abstract:
A low drop-out DC voltage regulator regulates a voltage from a DC supply and includes: a pass device controllable to maintain a voltage at an output of the regulator and arranged to provide a first current from the DC supply, at least part of said first current being provided to a load coupled to the output of the regulator; and a current regulator coupled to said pass device and to the output of the regulator. The current regulator is arranged to conduct a second current controllable such that the first current through said pass device remains constant irrespective of variations in a load current to said load.
Abstract:
A low-pass filter, including: between a first terminal and a second terminal, a series association of a first resistor, of a second resistor, and of a first amplifier; in parallel with the second resistor, a series association of a second amplifier and of a first capacitor; a second capacitor between an input of the first amplifier and a third terminal of application of a reference voltage; and a third capacitor between the second terminal and the third terminal.
Abstract:
The disclosure relates to a process of controlling a pixel cell of an image sensor of the CMOS type, comprising the steps of: initializing a sense node and a read node of the pixel cell; partially transferring electrical charges accumulated at the sense node to the read node; completely evacuating electrical charges accumulated at the read node; partially transferring electrical charges accumulated at the sense node to the read node; measuring the electrical charges accumulated at the read node to obtain a pixel signal corresponding to a quantity of electrical charges accumulated during a short integration period; completely transferring electrical charges accumulated at the sense node to the read node, without a prior initialization of the read node, and measuring the electrical charges at the read node to obtain a pixel voltage corresponding thus to the sum of the electrical charges accumulated during the short and long integration periods.
Abstract:
A coprocessor includes a calculation unit for executing at least one command, and a securization device. The securization device includes an error detection circuit for monitoring the execution of the command so as to detect any execution error, putting the coprocessor into an error mode by default as soon as the execution of the command begins, and lifting the error mode at the end of the execution of the command if no error has been detected, an event detection circuit for monitoring the appearance of at least one event to be detected, and a masking circuit for masking the error mode while the event to be detected does not happen, and declaring the error mode to the outside of the coprocessor if the event to be detected happens while the coprocessor is in the error mode. Application in particular but not exclusively to coprocessors embedded in integrated circuits for smart cards.
Abstract:
A synchronization system includes a memory and a control circuit. The control circuit includes a write interface for writing data in said memory with a first clock signal, wherein the write interface is configured for operating with a write pointer in response to a write command, a read interface for reading data from said memory with a second clock signal, wherein the read interface is configured for operating with a read pointer in response to a read command, a synchronization circuit for synchronizing said write pointer and said read pointer with a synchronization latency, and an elaboration circuit for elaborating data in memory with an elaboration latency, wherein the elaboration latency is smaller than the synchronization latency.
Abstract:
A method for capturing a sequence of video images, using an imager including an estimation of the parameters of a model of global motion between successive images. The method may include measurement of local motions on edges of the images, with the estimation of the parameters of the global motion model performed using the result of the measurement of local motions on the edges of the images.
Abstract:
The disclosure relates to a method for executing by a processor an instruction for saving/restoring several internal registers of the processor. The method comprises breaking down the saving/restoring instruction to generate micro-instructions for saving/restoring the content of a register, executing each of the micro-instructions, initializing a progress status of the saving/restoration of the registers, updating the progress status of the saving/restoration upon each generation of a micro-instruction for saving/restoring a register, saving the progress status in the event of an interruption in the saving/restoration of the registers to execute a higher-priority task, and restoring the progress status when the saving/restoration of the registers is resumed.
Abstract:
A method for generating a random number, comprising steps of receiving a data transmission binary signal subjected to phase jitter, generating several oscillator signals substantially of a same average frequency and having distinct respective phases, sampling a status of each of the oscillator signals upon the appearance of edges of the binary signal, and of generating a random number using the statuses of each of the oscillator signals. The method may be applied to an integrated circuit usable in a smart card.
Abstract:
The method for forming the microelectronic device having at least one two or three dimensional capacitor includes creating, on a substrate, a plurality of components and a number of superimposed metal interconnection levels. An insulating layer is formed above a metal interconnection level, and a horizontal metal zone of a next metal interconnection level in which one or more of the insulating blocks created from this insulating layer are incorporated is formed therein. The zone is designed to form a lower structural part of the capacitor.
Abstract:
A transistor including a germanium-rich channel. The germanium-rich channel is produced by oxidation of the silicon contained in the silicon-germanium intermediate layer starting from the lower surface of the said intermediate layer. The germanium atoms are therefore caused to migrate towards the upper surface of the silicon-germanium intermediate layer, and are stopped by the gate insulating layer. The migration of the atoms during the oxidation step is thus less prejudicial to the performance of the transistor, since the gate insulator of the transistor has already been produced and is not modified during this step. The migration of the germanium atoms towards the gate insulator, which is immobile, leads to a limitation of the surface defects between the channel and the insulator.