公开(公告)号：US5190737A

公开(公告)日：1993-03-02

申请号：US693507

申请日：1991-04-30

申请人： Alan W. Weimer ,  Raymond P. Roach ,  John P. Henley

发明人： Alan W. Weimer ,  Raymond P. Roach ,  John P. Henley

IPC分类号： B01J8/00 ,  B01J8/12 ,  C01B31/36

CPC分类号： C01B31/36 ,  B01J8/0095 ,  B01J8/12 ,  B82Y30/00 ,  C01P2004/51 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2006/12 ,  C01P2006/80

摘要： A process for preparing silicon carbide by carbothermal reduction which includes transporting, in a gaseous medium, a particulate reactive mixture of a silica source and a carbon source through a reaction zone. The heating rate of the atmosphere within the reaction zone is such that substantially all of the reactive mixture is heated at a heating rate of at least about 100.degree. C./second until an elevated temperature of at least 1800.degree. C. is reached. Either (1) carbon monoxide is added to the reaction zone or (2) a carbon monoxide level in the reaction is achieved in order to provide at least about 30 mole percent of the gases exiting the reaction zone to achieve a higher yield of silicon carbide.

摘要翻译： 一种通过碳热还原制备碳化硅的方法，其包括在气态介质中通过反应区输送二氧化硅源和碳源的颗粒反应性混合物。 反应区内的气氛的加热速率使得基本上所有的反应混合物以至少约100℃/秒的加热速率被加热直到达到至少1800℃的升高的温度。 （1）将一氧化碳加入到反应区中，或（2）达到反应中的一氧化碳水平，以便提供离开反应区的至少约30摩尔％的气体以获得更高的碳化硅产率 。