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    Nanowire and memory device using it as a medium for current-induced domain wall displacement
    51.
    发明授权
    Nanowire and memory device using it as a medium for current-induced domain wall displacement 有权
    纳米线和记忆装置使用它作为电流诱导畴壁位移的介质

    公开(公告)号：US08300445B2

    公开(公告)日：2012-10-30

    申请号：US12746473

    申请日：2008-12-04

    Applicant: Kyung-Jin Lee ,  Hyun-Woo Lee ,  Soon-Wook Jung

    Inventor： Kyung-Jin Lee ,  Hyun-Woo Lee ,  Soon-Wook Jung

    IPC: G11C19/00

    CPC classification number: G11C11/14 ,  B82Y10/00 ,  G11C11/5607 ,  G11C19/0808

    Abstract: Disclosed herein are a nanowire and a current-induced domain wall displacement-type memory device using the same. The nanowire has perpendicular magnetic anisotropy and is configured in a manner that when a parameter Q, calculated by a saturation magnetization per unit area, a domain wall thickness and a spin polarizability of a ferromagnet that is a constituent material of the nanowire, has a value of (formula 1 should be inserted here) a domain wall thickness, a width “*′” and a thickness −* of the nanowire satisfy the relationship of (formula 2 should be inserted here) The present invention can be designed such that a current density capable of driving a memory device utilizing the current-driven domain wall displacement has a value of less than (formula 3 should be inserted here), through the determination of the optimal nanowire width and thickness satisfying a value of a critical current density, Jc for the domain wall displacement below a certain value required for commercialization, for a given material in the nanowire with perpendicular anisotropy. According to such a configuration of the present invention, the current density required for the domain wall displacement can be at least 10 times or further lowered than the current density in currently available nano wires. Therefore, the present invention is capable of solving the problems associated with high power consumption and malfunction of the device due to generation of Joule heat and is also capable of achieving low-cost production of memory devices. 3 × 10 8 ⁢ ⁢ A ⁢ / ⁢ cm 2 ≤ Q ≤ 10 9 ⁢ ⁢ A ⁢ / ⁢ cm 2 , ( 1 ) 1.39 T / λ + 4.51 ≤ W λ ≤ 1.53 T / λ + 4.44 ( 2 ) 10 7 ⁢ ⁢ A ⁢ / ⁢ cm 2 , ( 3 )

    Abstract translation: 本文公开了使用其的纳米线和电流诱导畴壁位移型存储器件。 纳米线具有垂直磁各向异性，并且以如下方式配置：当由单位面积的饱和磁化强度计算的参数Q为作为纳米线的构成材料的铁磁体的畴壁厚度和自旋极化率时，具有值 （式1中应插入）畴壁厚度，纳米线的宽度*'和厚度 - *满足（式2应插入）的关系本发明可以设计成使得电流密度能够 通过确定满足临界电流密度值的最佳纳米线宽度和厚度，使用电流驱动畴壁位移来驱动存储器件的值小于（这里应插入公式3），对于 对于具有垂直各向异性的纳米线中的给定材料，畴壁位移低于商业化所需的一定值。 根据本发明的这种结构，畴壁位移所需的电流密度可以是目前可用的纳米线中的电流密度的10倍以上。 因此，本发明能够解决由于焦耳热的产生而导致的高功耗和故障的问题，并且也能够实现低成本地生产存储器件。 3×10 8突发A / cm 2≤Q≤109令A / cm 2，（1）1.39 T /λ+4.51≤Wλ≤1.53T/λ+ 4.44（2）10 7 唔A / cm 2，（3）

    ELECTRONIC DEVICE, MEMORY DEVICE, AND METHOD OF FABRICATING THE SAME
    52.
    发明申请
    ELECTRONIC DEVICE, MEMORY DEVICE, AND METHOD OF FABRICATING THE SAME 有权
    电子设备，存储器件及其制造方法

    公开(公告)号：US20110101476A1

    公开(公告)日：2011-05-05

    申请号：US12700464

    申请日：2010-02-04

    Applicant: Gyu Tae Kim ,  Kang Ho Lee ,  Hye Young Kim ,  Kyung Jin Lee ,  Woun Kang

    Inventor： Gyu Tae Kim ,  Kang Ho Lee ,  Hye Young Kim ,  Kyung Jin Lee ,  Woun Kang

    IPC: H01L29/82 ,  H01L21/02

    CPC classification number: H01L27/222 ,  H01L43/12

    Abstract: Provided are an electronic device, a memory device, and a method of fabricating the devices for preventing physical distortion of functional elements from generating and improving electric contact properties between the functional elements and electric elements connecting to the functional elements. At least two grooves are formed in a substrate, and a conductive material is filled in the grooves to obtain electric elements having a surface at the same height as that of the substrate. In addition, a functional material layer (functional layer) is formed on an entire upper surface of the substrate and is patterned so as to obtain a functional element having both bottom surfaces contacting the electric elements.

    Abstract translation: 提供一种电子设备，存储器件和制造用于防止功能元件的物理失真的器件的产生和改善功能元件与连接到功能元件的电气元件之间的电接触性能的方法。 在衬底中形成至少两个沟槽，并且在沟槽中填充导电材料以获得具有与衬底相同高度的表面的电气元件。 此外，在基板的整个上表面上形成功能材料层（功能层），并对其进行图案化以获得具有与电气元件接触的两个底面的功能元件。

    Push-up type portable charging cradle including stereo sound system
    55.
    发明授权
    Push-up type portable charging cradle including stereo sound system 有权
    上推型便携式充电座，包括立体声系统

    公开(公告)号：US07777450B2

    公开(公告)日：2010-08-17

    申请号：US11858027

    申请日：2007-09-19

    Applicant: Kyung-Jin Lee ,  Joon-Suh Kim ,  Chang-Soo Lee

    Inventor： Kyung-Jin Lee ,  Joon-Suh Kim ,  Chang-Soo Lee

    IPC: H02J7/00

    CPC classification number: H02J7/0044

    Abstract: A push-up type portable charging cradle having a stereo sound system is disclosed. The portable charging cradle includes a cradle body and a push-up type cradle rotatably mounted in the cradle body so that the push-up type cradle protrudes from or retracts to the top surface of the cradle body according to whether the push-up type cradle is pushed or not.

    Abstract translation: 公开了具有立体声系统的俯卧式便携式充电座。 便携式充电座包括支架体和可旋转地安装在支架体内的上推式托架，使得上推式托架根据上推式托架是否突出到托架主体的顶表面 被推或不推

    Perpendicular magnetic recording media
    57.
    发明申请
    Perpendicular magnetic recording media 有权

    公开(公告)号：US20060147759A1

    公开(公告)日：2006-07-06

    申请号：US11364172

    申请日：2006-03-01

    Applicant: Byung-kyu Lee ,  Hoon-sang Oh ,  Kyung-jin Lee

    Inventor： Byung-kyu Lee ,  Hoon-sang Oh ,  Kyung-jin Lee

    IPC: G11B5/66

    CPC classification number: G11B5/66 ,  G11B5/656 ,  G11B5/667 ,  G11B5/7325 ,  G11B5/74 ,  G11B2005/0005 ,  G11B2005/001 ,  G11B2005/0029

    Abstract: A perpendicular magnetic recording medium having a good thermal stability and a high recording density is provided. The perpendicular magnetic recording medium includes at least a first and a second perpendicular magnetic recording layer and a substrate supporting the first and the second perpendicular magnetic recording layers. The first and the second perpendicular magnetic recording layers have different physical/magnetic properties and are formed of materials that compensate the different physical/magnetic properties. The first and the second perpendicular magnetic recording layers are selected from a layer for improving perpendicular magnetic anisotropic energy (Ku), a layer for reducing the size of crystal grains, a layer for reducing the size of magnetic domains, a layer for increasing an SNR, a layer for improving signal output, a layer for reducing noise, a layer for improving the uniformity of crystal grain sizes, and a layer for improving the uniformity of magnetic domain sizes.

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