摘要:
Provided is a radio frequency (RF) amplifier. The RF amplifier includes an amplification circuit amplifying an RF signal, a bias voltage generation circuit supplying a bias voltage of the amplification circuit, and a first bias resistor connected between the amplification circuit ad the bias voltage generation circuit, and having a predetermined resistance allowing the bias voltage to be affected by the RF signal.
摘要:
A flash memory device and a method of programming the same include a memory cell array, a pass/fail check circuit and a control logic circuit. The memory cell array includes multiple memory cells arranged in rows and columns. The pass/fail check circuit verifies whether data bits selected by a column address during a column scan operation have program data values. The control logic circuit detects fail data bits from the selected data bits and stores the column address in response to the verification result of the pass/fail check circuit. The control logic circuit also compares a number of the fail data bits with a reference value and controls generation of the column address according to the comparison result.
摘要:
Provided is a power amplifier of a low-power consumption system that has linearity at a peak output power while increasing efficiency in a most frequently used range, and thereby enables a battery to last longer. The power amplifier includes an input impedance matcher for impedance-matching a signal input from the outside; a high-power amplifier and a low-power amplifier for amplifying the signal having passed through the input impedance matcher; an amplification controller controlling the high-power amplifier and low-power amplifier according to the power level of the input signal; an output impedance matcher for impedance-matching the signal amplified by the high-power amplifier and low-power amplifier; and a dynamic voltage supplier for supplying the low-power amplifier with a variable driving voltage. With the constitution set forth above, linearity at peak output power is maintained, and efficiency increases in the most frequently used range, thereby enabling the battery of a handheld to last longer.
摘要:
A security method and a security apparatus are disclosed which use a self-generated encryption key. The security method includes the steps of: generating an encryption key; decrypting pre-encrypted data using a pre-stored manufacturer key; and re-encrypting the decrypted data using the encryption key. The security method and apparatus minimize external leakage of data by self-generating the unique encryption key. Since the encryption keys are unique in each set, set binding is possible.
摘要:
A backlight assembly of an LCD is provided. The backlight assembly includes a lamp for generating a light, a light guide plate disposed at a side of the lamp, for guiding the light, and a diffusion sheet and a prism sheet disposed on the light guide plate, for enhancing efficiency of the light outputted from the light guide plate, wherein the prism sheet comprises a body part and a plurality of protrusion parts each having a concavely inclined surface formed on the body part.
摘要:
In a method of forming a layer, a titanium layer and a titanium nitride layer may be successively formed on a first wafer. By-products adhered to the inside of a chamber during the formation of the titanium nitride layer may be removed from the chamber. Processes of forming the titanium layer, forming the titanium nitride layer, and removing the by-products may be repeated relative to a second wafer.
摘要:
A method of forming plasma used in a process of manufacturing a semiconductor device and a method of forming a layer for a semiconductor device using the plasma are disclosed. The plasma forming method includes forming a plasma region in a sealed space by supplying a plasma source gas into the sealed space at a first flow rate and maintaining the plasma region by supplying a plasma maintenance gas into the sealed space at a second flow rate higher than the first flow rate. The plasma source gas includes a first gas having a first atomic weight, and the plasma maintenance gas includes a second gas having a second atomic weight lower than the first atomic weight. The plasma source gas includes argon and the plasma maintenance gas includes helium. The method may further include forming the layer on a wafer by supplying a source gas into the sealed space.
摘要:
Provided are a method and apparatus for effectively fixing scrambled content. The method includes checking fixing information for a program map table (PMT) packet of packets constituting the content, the fixing information being used to fix a transformed part of the content; extracting location information of a next PMT packet containing fixing data for fixing the transformed part of the content from the fixing information of the PMT packet; and fixing the transformed part of the content by using the fixing data in the next PMT packet indicated by the extracted location information. Accordingly, it is possible to easily detect a location of the content, which stores the fixing information, thereby expediting fixing of the transformed content.
摘要:
An apparatus for testing a system board includes a sensing unit that detects a predetermined signal output from the system board, and a control-signal-output unit that outputs a predetermined control signal to the system board in correspondence with the predetermined signal detected by the sensing unit. A method for testing a system board includes detecting a predetermined signal output from the system board; and outputting a predetermined control signal to the system board in correspondence with the detected predetermined signal
摘要:
Provided are a lift pin capable of preventing aluminum from depositing on the lift pin when depositing a metallic layer on a wafer through chemical vapor deposition. a system using the lift pin, and a method of manufacturing the same. The lift pin is made of stainless steel and is oxidized at a predetermined temperature for a predetermined time, such that the lift pin is not deposited with aluminum during a CVD process. Since the CVD vacuum processing chamber utilizes the heater and the lift pin which are made of oxidized SUS material, aluminum does not deposit on the heater and the lift. Therefore, when the lift pin is lowered, the lift pin is not lowered by its own weight, thereby preventing a wafer from being broken. Also, the lift pin is prevented from being ruptured by a robot moving in and out of an opening of the CVD vacuum processing chamber.