公开(公告)号：US20140091390A1

公开(公告)日：2014-04-03

申请号：US13631385

申请日：2012-09-28

Applicant: APPLE INC.

Inventor： Ming-Chin Hung ,  Byung Duk Yang ,  Kyung Wook Kim ,  Shih Chang Chang

IPC: H01L29/786 ,  H01L21/768

CPC classification number: H01L21/768 ,  H01L21/76802 ,  H01L21/76838 ,  H01L27/1248 ,  H01L27/1288

Abstract: A thin-film transistor having a protection layer for a planarization layer. The protection layer prevents reduction of the planarization layer during an ashing process, thereby preventing the formation of a steeply tapered via hole through the planarization layer. In this manner, the via hole may be coated with a conductive element that may serve as a conductive path between a common electrode and the drain of the transistor.

Abstract translation: 一种具有用于平坦化层的保护层的薄膜晶体管。 保护层防止灰化过程中平坦化层的减少，从而防止形成通过平坦化层的急剧变细的通孔。 以这种方式，通孔可以涂覆有可以用作公共电极和晶体管的漏极之间的导电路径的导电元件。