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72 条记录 (耗时 0.033 秒)

    Backlight unit of liquid crystal display
    53.
    发明申请
    Backlight unit of liquid crystal display 有权
    背光单元液晶显示

    公开(公告)号：US20080055510A1

    公开(公告)日：2008-03-06

    申请号：US11808570

    申请日：2007-06-11

    申请人： Dong Park

    发明人： Dong Park

    IPC分类号： G02F1/1333

    CPC分类号： G02F1/133604 ,  G02F1/133608 ,  G02F2001/133612

    摘要： A backlight unit of a liquid crystal display for arranging a wire for supplying a driving current connected to a common electrode to be penetrated a piece provided at the inside portion is disclosed. In the backlight unit of the liquid crystal display, a cover bottom includes an accepting space to which the reflection sheet is attached. A first and a second side bottoms are arranged within the accepting space of the cover bottom, and are located to be symmetrical with both sides of the reflection sheet. A first and second common electrodes are commonly connected to both side ends of the plurality of lamps. A first piece is located between the lamps, and is formed to penetrate the first side bottom and the cover bottom. And wherein, a first wire for supplying a driving current connected to the first common electrode is arranged to penetrate the first common electrode.

    摘要翻译： 公开了一种液晶显示器的背光单元，用于布置用于提供连接到公共电极的驱动电流的导线以穿透设置在内部的部件。 在液晶显示器的背光单元中，盖底部包括安装有反射片的容纳空间。 第一和第二侧底部布置在盖底的接纳空间内，并且被定位成与反射片的两侧对称。 第一和第二公共电极通常连接到多个灯的两个侧端。 第一件位于灯之间，并且形成为穿透第一侧底部和盖底部。 并且其中，用于提供连接到第一公共电极的驱动电流的第一布线布置成穿透第一公共电极。

    Negative plate for nickel/metal hydride secondary battery and fabrication method thereof
    54.
    发明申请
    Negative plate for nickel/metal hydride secondary battery and fabrication method thereof 审中-公开
    镍/金属氢化物二次电池用负极板及其制造方法

    公开(公告)号：US20070117022A1

    公开(公告)日：2007-05-24

    申请号：US11645005

    申请日：2006-12-26

    申请人： Dong Park

    发明人： Dong Park

    IPC分类号： H01M4/70 ,  H01M4/58

    CPC分类号： H01M4/242 ,  H01M4/661 ,  H01M4/74 ,  H01M4/745 ,  H01M10/345 ,  Y10T29/10

    摘要： Disclosed is a negative plate for nickel/metal hydride secondary batteries, comprising a negative plate frame; a terminal connected to the negative plate frame; and two or more strips inserted into the negative plate frame, wherein the strip is formed by filling the space between two metal plates having a plurality of perforations formed thereon with electrode material. Further, provided is a method for fabricating such negative plate for nickel/metal hydride secondary batteries, comprising: perforating metal plates to have a plurality of perforations; filling the space between the two metal plates with powders of an electrode material; compressing the two metal plates having the electrode material therebetween, so as to form a strip; connecting two or more, as many as being required for a predetermined capacity, strips formed as above; and inserting connected strips into the negative plate frame so as to connect with an electrode terminal.

    摘要翻译： 公开了一种用于镍/金属氢化物二次电池的负极板，包括负极板框架; 连接到负板框架的端子; 并且两个或更多条插入负板框架中，其中通过用形成有多个穿孔的两个金属板之间的空间填充电极材料来形成带。 此外，提供了一种用于制造用于镍/金属氢化物二次电池的负极板的方法，包括：穿孔金属板以具有多个穿孔; 用电极材料的粉末填充两个金属板之间的空间; 压缩其间具有电极材料的两个金属板，以形成条带; 连接两个或更多个，如上所述形成的预定容量所需的数量; 并将连接的条插入负极板框架中，以便与电极端子连接。

    Photo mask
    55.
    发明申请
    Photo mask 审中-公开
    照片面具

    公开(公告)号：US20060234169A1

    公开(公告)日：2006-10-19

    申请号：US11270464

    申请日：2005-11-10

    申请人： Sang Bae ,  Dong Park

    发明人： Sang Bae ,  Dong Park

    IPC分类号： G03C7/26 ,  G03C1/08 ,  G03C7/32

    CPC分类号： G03F1/00

    摘要： A photo mask comprises a H-type light-shield pattern. In an exposure process, a photo mask is used to form a STAR (Step Asymmetry Recess) gate region, thereby stably securing a storage node contact region and improving a refresh characteristic of a semiconductor device.

    摘要翻译： 光掩模包括H型遮光图案。 在曝光处理中，使用光掩模来形成STAR（步骤不对称凹陷）栅极区域，从而稳定地确保存储节点接触区域并提高半导体器件的刷新特性。

    Massage device
    56.
    发明申请
    Massage device 审中-公开
    按摩器

    公开(公告)号：US20060089573A1

    公开(公告)日：2006-04-27

    申请号：US10970087

    申请日：2004-10-21

    申请人： Dong Park

    发明人： Dong Park

    IPC分类号： A61H7/00

    CPC分类号： A61H2201/1669

    摘要： The present invention provides a massage device. The invention includes a table with an attached cross beam at a specified height above the table surface. The position of the cross beam may be adjusted along the length of the table. The cross beam may also be swung open on a hinge, allowing easier patient mounting and dismounting from the table. Mounted to the cross beam is a motorized unit that can be positioned along the length of the cross beam. The height of the motorized unit over the table may also be adjusted. The motorized unit has a moving contact surface that performs the actual massaging action by moving horizontally on the skin of the person lying on the table. The contact surface of the motorized unit may be a flat pad. In an alternate embodiment of the invention, the contact surface of the motorized unit has a plurality of nodules that act ac focused contact points that may be electrically heated.

    摘要翻译： 本发明提供一种按摩装置。 本发明包括在桌子表面上方的指定高度处具有附接横梁的工作台。 横梁的位置可以沿桌子的长度调整。 横梁也可以在铰链上打开，允许患者更容易从桌子上拆下。 安装到横梁上的是一个电动单元，可以沿着横梁的长度定位。 电动单元在桌子上的高度也可以调整。 电动单元具有移动的接触表面，其通过在躺在桌子上的人的皮肤上水平移动来执行实际的按摩动作。 电动单元的接触表面可以是平垫。 在本发明的替代实施例中，电动单元的接触表面具有多个可以被电加热的交流聚焦接触点的结节。

    Method for fabricating shallow trench isolation layer of semiconductor device
    57.
    发明申请
    Method for fabricating shallow trench isolation layer of semiconductor device 有权
    制造半导体器件浅沟槽隔离层的方法

    公开(公告)号：US20060008971A1

    公开(公告)日：2006-01-12

    申请号：US11176083

    申请日：2005-07-07

    申请人： Dong Park

    发明人： Dong Park

    IPC分类号： H01L21/8238

    CPC分类号： H01L21/76224

    摘要： A method for fabricating an STI layer of a semiconductor device is disclosed, to improve the integration of the semiconductor device in a method of increasing a moat area for a gate line by minimizing an isolation area between moat areas, which includes the steps of forming a sacrificial layer on a substrate; forming a moat pattern by coating a photoresist on the sacrificial layer and performing exposure and development process to the coated photoresist with a mask pattern of the STI layer; patterning the sacrificial layer by using the moat pattern as a mask; forming an insulating layer on an entire surface of the substrate including the patterned sacrificial layer after removing the moat pattern; forming insulating layer sidewalls at the side of the sacrificial layer by anisotropically etching the insulating layer; removing the sacrificial layer and forming a silicon layer on the substrate; and planarizing the surface of the silicon layer and the insulating layer sidewalls by CMP.

    摘要翻译： 公开了一种用于制造半导体器件的STI层的方法，以通过最小化护壕区域之间的隔离区域来改善半导体器件在增加栅极线的护壕区域的方法中的集成，其包括以下步骤： 牺牲层; 通过在牺牲层上涂覆光致抗蚀剂并且以STI层的掩模图案对涂覆的光致抗蚀剂进行曝光和显影处理来形成护套图案; 通过使用护城河图案作为掩模来图案化牺牲层; 在去除所述护城河图案之后，在包括所述图案化牺牲层的所述基板的整个表面上形成绝缘层; 通过各向异性蚀刻绝缘层在牺牲层的侧面上形成绝缘层侧壁; 去除牺牲层并在衬底上形成硅层; 并通过CMP平坦化硅层和绝缘层侧壁的表面。

    Method of making manganese sulfide compositions
    58.
    发明申请
    Method of making manganese sulfide compositions 失效
    制备硫化锰组合物的方法

    公开(公告)号：US20050211021A1

    公开(公告)日：2005-09-29

    申请号：US11121646

    申请日：2005-05-04

    申请人： Dong Park ,  Hyung Kim

    发明人： Dong Park ,  Hyung Kim

    IPC分类号： B22F3/12 ,  B22F1/00 ,  C22C29/00 ,  C22C33/02 ,  C22B47/00 ,  C01G45/00

    CPC分类号： C22C33/0221 ,  B22F1/0003 ,  C22C29/00

    摘要： Compositions of a manganese sulfide (MnS) compound useful as additives for making a sintered product are disclosed, in which molybdenum (Mo) or Fe—Mo is added to the MnS compound to improve machinability and to obtain a more stable MnS compound, thereby reducing any change in weight and size in a sintering process. The compositions can suppress erosion of parts in a sintering furnace during a sintering process, prevent sooting on a surface of the sintered product from occurring, and enhance resistance to moisture in the air to keep the sintered product in the air for a long time.

    摘要翻译： 公开了用作制造烧结产品的添加剂的硫化锰（MnS）化合物的组合物，其中向MnS化合物中加入钼（Mo）或Fe-Mo以改善机械加工性并获得更稳定的MnS化合物，由此减少 任何烧结过程中重量和尺寸的变化。 该组合物可以在烧结过程中抑制烧结炉中部件的侵蚀，防止在烧结产品的表面上产生排烟，并且增强空气中的耐湿性以将烧结产品长时间保持在空气中。

    Method of manufacturing semiconductor device
    59.
    发明申请
    Method of manufacturing semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US20050095868A1

    公开(公告)日：2005-05-05

    申请号：US10874983

    申请日：2004-06-23

    申请人： Cheol Park ,  Sang Woo ,  Chang Song ,  Dong Park ,  Tae Lee

    发明人： Cheol Park ,  Sang Woo ,  Chang Song ,  Dong Park ,  Tae Lee

    IPC分类号： H01L27/108 ,  H01L21/302 ,  H01L21/314 ,  H01L21/318 ,  H01L21/322 ,  H01L21/324 ,  H01L21/336 ,  H01L21/461 ,  H01L21/8234 ,  H01L21/8239 ,  H01L21/8242

    CPC分类号： H01L21/28141 ,  H01L21/3144 ,  H01L21/3185 ,  H01L27/1052 ,  H01L27/10873

    摘要： Disclosed is a method of manufacturing a semiconductor device. The method includes the steps of forming a gate in a cell region and a peripheral region of a substrate, depositing a buffer oxide layer on the gate and the substrate, annealing a resultant structure of the substrate, depositing a nitride spacer layer on the buffer oxide layer, depositing an oxide spacer layer on the nitride spacer layer, forming an oxide spacer at the peripheral region of the substrate, and removing the oxide spacer layer remaining in the cell region. The annealing step is additionally carried out after depositing the buffer oxide layer so as to improve the interfacial surface characteristic and film quality, so that oxide etchant is prevented from penetrating into the silicon substrate during the wet dip process. Unnecessary voids are prevented from being created in the silicon substrate.

    摘要翻译： 公开了半导体器件的制造方法。 该方法包括以下步骤：在衬底的单元区域和外围区域中形成栅极，在栅极和衬底上沉积缓冲氧化物层，退火所得衬底的结构，在缓冲氧化物上沉积氮化物间隔层 在所述氮化物间隔层上沉积氧化物间隔层，在所述衬底的周围区域形成氧化物间隔物，以及去除所述电池区域中剩余的氧化物间隔层。 在沉积缓冲氧化物层之后另外进行退火步骤，以改善界面表面特性和膜质量，从而防止在湿法浸渍过程中氧化物蚀刻剂渗入硅衬底。 防止在硅衬底中产生不必要的空隙。