公开(公告)号：US06544891B1

公开(公告)日：2003-04-08

申请号：US09945435

申请日：2001-09-04

申请人： Ying-Ho Chen ,  Wen-Chih Chiou ,  Tsu Shih ,  Syun-Ming Jang

发明人： Ying-Ho Chen ,  Wen-Chih Chiou ,  Tsu Shih ,  Syun-Ming Jang

IPC分类号： H01L2144

CPC分类号： H01L21/7684 ,  H01L21/76838

摘要： A method of copper metallization wherein copper flaking and metal bridging problems are eliminated by an annealing process is described. A first metal line is provided on an insulating layer overlying a semiconductor substrate. A dielectric stop layer is deposited overlying the first metal line. A dielectric layer is deposited overlying the dielectric stop layer. An opening is etched through the dielectric layer and the dielectric stop layer to the first metal line. A barrier metal layer is deposited over the surface of the dielectric layer and within the opening. A copper layer is deposited over the surface of the barrier metal layer. The copper layer and barrier metal layer not within the opening are polished away wherein after a time period, copper flakes form on the surface of the copper and dielectric layers. The copper layer and the dielectric layer are alloyed whereby the copper layer is stabilized and the copper flakes are removed to complete copper damascene metallization in the fabrication of an integrated circuit.

摘要翻译： 描述了通过退火工艺消除铜剥落和金属桥接问题的铜金属化方法。 第一金属线设置在覆盖在半导体衬底上的绝缘层上。 沉积在第一金属线上的电介质停止层。 介电层沉积在介电阻挡层上。 通过介电层和电介质停止层蚀刻开口到第一金属线。 阻挡金属层沉积在电介质层的表面上并且在开口内。 在阻挡金属层的表面上沉积铜层。 不在开口内的铜层和阻挡金属层被抛光，其中在一段时间之后，在铜和电介质层的表面上形成铜片。 将铜层和电介质层合金化，由此铜层稳定，并且在制造集成电路中去除铜片以完成铜镶嵌金属化。

公开(公告)号：US06518183B1

公开(公告)日：2003-02-11

申请号：US09947782

申请日：2001-09-06

申请人： Weng Chang ,  Tien-I Bao ,  Ying-Ho Chen ,  Syun-Ming Jang

发明人： Weng Chang ,  Tien-I Bao ,  Ying-Ho Chen ,  Syun-Ming Jang

IPC分类号： H01L2144

CPC分类号： H01L21/76883 ,  H01L21/76834

摘要： Within a method for fabricating a microelectronic fabrication having formed therein a copper containing conductor layer passivated with a passivation layer, there is first: (1) pre-heated the copper containing conductor layer to a temperature of from about 300 to about 450 degrees centigrade for a time period of from about 30 to about 120 seconds to form a pre-heated copper containing conductor layer; and then (2) plasma treated the pre-heated copper containing conductor layer within a reducing plasma to form a plasma treated pre-heated copper containing conductor layer; prior to (3)forming upon the plasma treated pre-heated copper containing conductor layer the passivation layer. The foregoing process sequence provides for attenuated hillock defects within the plasma treated pre-heated copper containing conductor layer when forming the passivation layer thereupon.

摘要翻译： 在其中形成有钝化层钝化的含铜导体层的微电子制造方法中，首先：（1）将含铜导体层预热至约300至约450摄氏度的温度，用于 约30至约120秒的时间段以形成预热的含铜导体层; 然后（2）在还原等离子体中等离子体处理预热的含铜导体层，以形成等离子体处理的预热含铜导体层; 在（3）在等离子体处理的预热含铜导体层上形成钝化层之前。 当在其上形成钝化层时，上述工艺顺序提供等离子体处理的预热含铜导体层内的衰减的小丘缺陷。

公开(公告)号：US06398627B1

公开(公告)日：2002-06-04

申请号：US09815427

申请日：2001-03-22

申请人： Wen-Chih Chiou ,  Ying-Ho Chen ,  Tsu Shih ,  Syun-Ming Jang

发明人： Wen-Chih Chiou ,  Ying-Ho Chen ,  Tsu Shih ,  Syun-Ming Jang

IPC分类号： B24B900

CPC分类号： B24B37/04 ,  B24B57/02

摘要： A slurry dispensing unit for a chemical mechanical polishing apparatus equipped with multiple slurry dispensing nozzles is disclosed. The slurry dispensing unit is constructed by a dispenser body that has a delivery conduit, a return conduit and a U-shape conduit connected in fluid communication therein between for flowing continuously a slurry solution therethrough and a plurality of nozzles integrally connected to and in fluid communication with a fluid passageway in the delivery conduit for dispensing a slurry solution. The multiple slurry dispensing nozzles may either have a fixed opening or adjustable openings by utilizing a flow control valve at each nozzle opening.

摘要翻译： 公开了一种用于配备有多个浆料分配喷嘴的化学机械抛光设备的浆料分配单元。 浆料分配单元由分配器主体构成，分配器主体具有输送管道，回流管道和连接在其中的流体连通的U形管道，用于连续地流动通过其中的浆液;以及多个喷嘴，其一体地连接到流体连通 在输送管道中具有用于分配浆液的流体通道。 多个浆料分配喷嘴可以通过在每个喷嘴开口处利用流量控制阀来具有固定的开口或可调节的开口。

公开(公告)号：US06194307B1

公开(公告)日：2001-02-27

申请号：US09298930

申请日：1999-04-26

申请人： Ying-Ho Chen ,  Syun-Ming Jang

发明人： Ying-Ho Chen ,  Syun-Ming Jang

IPC分类号： H01L214763

CPC分类号： H01L21/7684

摘要： After the first layer of copper has been deposited and polished (to form the pattern of copper damascene conducting lines) a layer of Ta or TaN/Cu is deposited. Another thin layer of copper is deposited thereby filling existing pores and recesses in the polished copper lines. A second CMP is applied to the surface of the second deposited layer of copper, this second CMP removes the redundant copper from the space where the Inter Metal Dielectric (IMD) layer will be created. Prior to the deposition of the second layer of copper, a (brief) etchback of the (surface of the) first layer of copper can be performed in order to enhance copper surface integrity and thereby improve the deposition of the second layer of copper. A layer of TaN/Ta and a layer of seed copper can be deposited within the openings for the damascene conducting lines prior to the deposition of these lines.

摘要翻译： 在第一层铜被沉积和抛光之后（形成铜镶嵌导电线的图案），沉积一层Ta或TaN / Cu。 沉积另一薄铜层，从而填充抛光铜线中的现有孔和凹槽。 第二CMP施加到第二沉积铜层的表面上，该第二CMP从产生金属间介质（IMD）层的空间中去除冗余铜。 在沉积第二层铜之前，可以执行铜（第一层）的（表面）的（简短的）回蚀，以便增强铜表面的完整性，从而改善第二层铜的沉积。 在沉积这些线之前，可以在用于镶嵌导电线的开口内沉积一层TaN / Ta和一层种子铜。

公开(公告)号：US20060079154A1

公开(公告)日：2006-04-13

申请号：US10964145

申请日：2004-10-12

申请人： Wen-Chih Chiou ,  Ying-Ho Chen ,  Chen-Hua Yu

发明人： Wen-Chih Chiou ,  Ying-Ho Chen ,  Chen-Hua Yu

IPC分类号： B24B7/30 ,  B24B1/00

CPC分类号： H01L21/3212 ,  B24B37/042

摘要： A chemical-mechanical polishing (CMP) process for the manufacturing of semiconductor devices is disclosed. The process includes removing a first portion of a first layer of interconnect materials using a first platen and a first slurry, removing a second portion of the first layer using a second platen and a second slurry, removing a first portion of a second layer of the interconnect materials using a second platen and a third slurry, and removing a second portion of the second layer using a third platen and a fourth slurry.

摘要翻译： 公开了用于制造半导体器件的化学机械抛光（CMP）工艺。 该方法包括使用第一压板和第一浆料去除第一层互连材料的第一部分，使用第二压板和第二浆料除去第一层的第二部分，去除第二层的第一部分 使用第二压板和第三浆料的互连材料，以及使用第三压板和第四浆料除去第二层的第二部分。

公开(公告)号：US07232362B2

公开(公告)日：2007-06-19

申请号：US10964145

申请日：2004-10-12

申请人： Wen-Chih Chiou ,  Ying-Ho Chen ,  Chen-Hua Yu

发明人： Wen-Chih Chiou ,  Ying-Ho Chen ,  Chen-Hua Yu

IPC分类号： B24B1/00

CPC分类号： H01L21/3212 ,  B24B37/042

摘要： A chemical-mechanical polishing (CMP) process for the manufacturing of semiconductor devices is disclosed. The process includes removing a first portion of a first layer of interconnect materials using a first platen and a first slurry, removing a second portion of the first layer using a second platen and a second slurry, removing a first portion of a second layer of the interconnect materials using a second platen and a third slurry, and removing a second portion of the second layer using a third platen and a fourth slurry.

摘要翻译： 公开了用于制造半导体器件的化学机械抛光（CMP）工艺。 该方法包括使用第一压板和第一浆料去除第一层互连材料的第一部分，使用第二压板和第二浆料除去第一层的第二部分，去除第二层的第一部分 使用第二压板和第三浆料的互连材料，以及使用第三压板和第四浆料除去第二层的第二部分。

公开(公告)号：US07416648B2

公开(公告)日：2008-08-26

申请号：US11127361

申请日：2005-05-12

申请人： Wen-Chih Chiou ,  Ying-Ho Chen ,  Cheng Hsun Chan

发明人： Wen-Chih Chiou ,  Ying-Ho Chen ,  Cheng Hsun Chan

IPC分类号： C25B9/02

CPC分类号： B24B37/04 ,  B23H5/08 ,  B24B49/12 ,  H01L21/67288

摘要： A system for use in manufacturing semiconductor devices, is provided. The system includes an electrochemical processing tool and an image sensor. The electrochemical processing tool includes an electrode located at a central region of a platen. The electrode is adapted for contacting a wafer workpiece during certain processing of the wafer workpiece using the tool. At least part of the electrode is viewable from above the platen when the electrochemical processing tool is operably assembled. The image sensor is capable of capturing an image of the viewable part of the electrode. The image sensor is positioned above the platen. The image sensor is adapted to be aimed at the electrode when an image of the electrode is to be taken with the image sensor.

摘要翻译： 提供一种用于制造半导体器件的系统。 该系统包括电化学处理工具和图像传感器。 电化学处理工具包括位于压板的中心区域的电极。 电极适于在使用该工具的晶片工件的某些处理期间接触晶片工件。 当电化学加工工具可操作地组装时，电极的至少部分可从压板上方观察。 图像传感器能够捕获电极的可视部分的图像。 图像传感器位于压板上方。 当用图像传感器拍摄电极的图像时，图像传感器适于瞄准电极。

公开(公告)号：US20060254927A1

公开(公告)日：2006-11-16

申请号：US11127361

申请日：2005-05-12

申请人： Wen-Chih Chiou ,  Ying-Ho Chen ,  Cheng Chan

发明人： Wen-Chih Chiou ,  Ying-Ho Chen ,  Cheng Chan

IPC分类号： B23H3/00

CPC分类号： B24B37/04 ,  B23H5/08 ,  B24B49/12 ,  H01L21/67288

摘要： A system for use in manufacturing semiconductor devices, is provided. The system includes an electrochemical processing tool and an image sensor. The electrochemical processing tool includes an electrode located at a central region of a platen. The electrode is adapted for contacting a wafer workpiece during certain processing of the wafer workpiece using the tool. At least part of the electrode is viewable from above the platen when the electrochemical processing tool is operably assembled. The image sensor is capable of capturing an image of the viewable part of the electrode. The image sensor is positioned above the platen. The image sensor is adapted to be aimed at the electrode when an image of the electrode is to be taken with the image sensor.

摘要翻译： 提供一种用于制造半导体器件的系统。 该系统包括电化学处理工具和图像传感器。 电化学处理工具包括位于压板的中心区域的电极。 电极适于在使用该工具的晶片工件的某些处理期间接触晶片工件。 当电化学加工工具可操作地组装时，电极的至少部分可从压板上方观察。 图像传感器能够捕获电极的可视部分的图像。 图像传感器位于压板上方。 当用图像传感器拍摄电极的图像时，图像传感器适于瞄准电极。

公开(公告)号：US4609735A

公开(公告)日：1986-09-02

申请号：US649333

申请日：1984-09-11

申请人： Carl D. Lunsford ,  Ying-Ho Chen

发明人： Carl D. Lunsford ,  Ying-Ho Chen

IPC分类号： C07C43/196 ,  C07C43/23 ,  C07C45/71 ,  C07D211/14 ,  C07D211/70 ,  C07D213/64 ,  C07D215/06 ,  C07D217/04 ,  C07D295/092 ,  C07C49/82 ,  C07C103/38

CPC分类号： C07D213/64 ,  C07C43/196 ,  C07C43/23 ,  C07C45/71 ,  C07D211/14 ,  C07D211/70 ,  C07D215/06 ,  C07D217/04 ,  C07D295/088

摘要： Novel 1-aryloxy-4-amino-2-butanols of the formulaArO--CH.sub.2 --CHOH--CH.sub.2 --CH.sub.2 --NR.sup.1 R.sup.2wherein AR is 1-naphythyl, 2-naphthyl, indene-4(or 5-)yl, 3-(or 5-)chloro-2-pyridyl, phenyl, monosubstituted phenyl or di-substituted phenyl, R.sup.1 is lower alkyl, phenyl, phenylalkyl, 2-hydroxymethyl-2-propyl, adamantyl or lower-cycloalkyl, R.sup.2 is hydrogen or lower alkyl, wherein R.sup.1 and R.sup.2 together with the adjacent nitrogen form a heterocyclic residue and the pharmaceutically acceptable acid addition salts thereof having local anesthetic, beta-adrenergic blocking, antihypertensive and antiarrhythmic properties are disclosed. The compounds are prepared by reacting novel 1-aryloxy-4-chloro-2-butanols with amines. Methods for the preparation of the novel 1-aryloxy-4-chloro-2-butanol intermediates are also disclosed.

摘要翻译： 式ArO-CH2-CHOH-CH2-CH2-NR1R2的新型1-芳氧基-4-氨基-2-丁醇其中AR为1-萘乙基，2-萘基，茚-4（或5-）基，3-（ 苯基，苯基烷基，2-羟基甲基-2-丙基，金刚烷基或低级环烷基，R 2是氢或低级烷基，R 2是氢或低级烷基， 其中R1和R2与相邻的氮一起形成杂环残基，并且公开了其具有局部麻醉剂，β-肾上腺素能阻断剂，抗高血压药和抗心律失常药物的药学上可接受的酸加成盐。 该化合物通过新颖的1-芳氧基-4-氯-2-丁醇与胺反应来制备。 还公开了制备新型1-芳氧基-4-氯-2-丁醇中间体的方法。

公开(公告)号：US4306065A

公开(公告)日：1981-12-15

申请号：US105161

申请日：1979-12-19

申请人： Ying-Ho Chen

发明人： Ying-Ho Chen

IPC分类号： C07D239/94 ,  C07D403/04

CPC分类号： C07D239/94

摘要： Novel hypotensive agents are disclosed which are quinazolines substituted in the 2 and 4 position having the general formula: ##STR1## wherein Q is a secondary amine radical illustrated by loweralkanolylamino or a tertiary amine radical such as pyrrolidinyl, piperidinyl or piperazinyl, any of which may be substituted by various groups such as loweralkanolyl.

摘要翻译： 公开了新的降压剂，其在2和4位被喹唑啉取代，具有以下通式：其中Q是由低级烷酰胺基或叔胺基例如吡咯烷基，哌啶基或哌嗪基所示的仲胺基，其中任何一种可以 被各种基团取代，例如低级烷酰基。