IMAGE SENSORS, METHODS, AND PIXELS WITH STORAGE AND TRANSFER GATES
    51.
    发明申请
    IMAGE SENSORS, METHODS, AND PIXELS WITH STORAGE AND TRANSFER GATES 有权
    图像传感器,方法和像素存储和传输门

    公开(公告)号:US20110139963A1

    公开(公告)日:2011-06-16

    申请号:US12963566

    申请日:2010-12-08

    申请人: Alexander Krymski

    发明人: Alexander Krymski

    IPC分类号: H01L27/146 H01J40/14

    摘要: An image sensor includes a pixel array with a plurality of pixels. A pixel includes a photodiode, a first transfer gate, a storage gate, and a second transfer gate. The first transfer gate is controllable to transfer charge from the photodiode to under the storage gate. The storage gate is connected to a readout circuit to allow the readout circuit to read out a voltage level of a potential at the storage gate. The second transfer gate is controllable to transfer charge from under the storage gate. A method includes controlling the first transfer gate to transfer charge from the photodiode to under the storage gate, reading out a voltage level of a potential at the storage gate using the readout circuit that is connected to the storage gate, and controlling the second transfer gate to drain charge from under the storage gate.

    摘要翻译: 图像传感器包括具有多个像素的像素阵列。 像素包括光电二极管,第一传输门,存储门和第二传输门。 第一传输门是可控的,以将电荷从光电二极管转移到存储门下。 存储门连接到读出电路,以允许读出电路读出存储门处的电位的电压电平。 第二传输门是可控的以从存储门下方传送电荷。 一种方法包括:控制第一传输门以将电荷从光电二极管转移到存储门下方,使用连接到存储门的读出电路读出存储门处的电位的电压电平,并控制第二传输门 从储存门下方排出电荷。

    IMAGE SENSORS AND METHODS WITH COLUMN READOUT CIRCUITS
    52.
    发明申请
    IMAGE SENSORS AND METHODS WITH COLUMN READOUT CIRCUITS 有权
    图像传感器和方法与柱读取电路

    公开(公告)号:US20090273694A1

    公开(公告)日:2009-11-05

    申请号:US12433711

    申请日:2009-04-30

    申请人: Alexander Krymski

    发明人: Alexander Krymski

    IPC分类号: H04N5/335

    CPC分类号: H04N5/3742 H04N5/378

    摘要: An image sensor includes a pixel array, a plurality of column readout lines, and a plurality of column readout circuits. The pixel array includes a plurality of pixels arranged in a plurality of rows and a plurality of columns. Each of the plurality of column readout lines is connected to a corresponding at least two pixels of the plurality of pixels. Each of the plurality of column readout circuits is connected to a corresponding column readout line of the plurality of column readout lines and includes an amplifier, a first capacitor connected between the corresponding column readout line and an input of the amplifier, and a second capacitor connected between the corresponding column readout line and the input of the amplifier.

    摘要翻译: 图像传感器包括像素阵列,多个列读出线和多个列读出电路。 像素阵列包括排列成多行和多列的多个像素。 多个列读出线中的每一条连接到多个像素中相应的至少两个像素。 多个列读出电路中的每一个连接到多个列读出线的对应列读出线,并且包括放大器,连接在对应的列读出线和放大器的输入之间的第一电容器和连接到第二电容器的第二电容器 在相应的列读出线和放大器的输入之间。

    Variable quantization ADC for image sensors
    53.
    发明授权
    Variable quantization ADC for image sensors 失效
    图像传感器的可变量化ADC

    公开(公告)号:US07541963B2

    公开(公告)日:2009-06-02

    申请号:US11523097

    申请日:2006-09-19

    申请人: Alexander Krymski

    发明人: Alexander Krymski

    IPC分类号: H03M1/58

    CPC分类号: H03M1/367 H03M1/56

    摘要: An A/D converter suitable for use in a system in which the signal power of noise increases with the signal power of the signal, such as an imaging system, utilizes a variable quantization system for converting analog signals into digital signals. The variable quantization is controlled so that at low signal levels the quantization is similar or identical to conventional A/D converters, while the quantization level is increased at higher signal levels. Thus, higher resolution is provided at low signal levels while lower resolution is produced at high signal levels.

    摘要翻译: 适用于其中噪声信号功率随着信号的信号功率(诸如成像系统)增加的系统中的A / D转换器利用可变量化系统将模拟信号转换为数字信号。 控制可变量化,使得在低信号电平下,量化与常规A / D转换器相似或相同,而量化电平在较高信号电平下增加。 因此,在低信号电平下提供更高的分辨率,而在高信号电平下产生较低的分辨率。

    Image sensor circuits and methods with multiple readout lines per column of pixel circuits
    54.
    发明授权
    Image sensor circuits and methods with multiple readout lines per column of pixel circuits 有权
    图像传感器电路和方法,每列像素电路具有多条读出线

    公开(公告)号:US07488928B2

    公开(公告)日:2009-02-10

    申请号:US11774505

    申请日:2007-07-06

    申请人: Alexander Krymski

    发明人: Alexander Krymski

    IPC分类号: H01L27/00

    CPC分类号: H04N5/378 H04N5/3742

    摘要: An image sensor circuit of various embodiments includes a pixel array with a plurality of pixel circuits arranged in a plurality of rows and a plurality of columns. Each column of the pixel array includes a corresponding first set of pixel circuits connected to output analog pixel signals to a respective first column readout line, and a corresponding second set of pixel circuits connected to output analog pixel signals to a respective second column readout line. Two or more analog-to-digital conversion circuits may be provided for each column of pixel circuits in the pixel array, and two or more rows of pixel circuits in the pixel array may be activated to output analog pixel signals to corresponding column readout lines at a same time.

    摘要翻译: 各种实施例的图像传感器电路包括具有排列成多行和多列的多个像素电路的像素阵列。 像素阵列的每列包括相应的第一组像素电路,连接到相应的第一列读出线上以输出模拟像素信号,以及相应的第二组像素电路,连接到相应的第二列读出线。 可以为像素阵列中的每列像素电路提供两个或更多个模拟 - 数字转换电路,并且可以激活像素阵列中的两行或更多行像素电路,以将模拟像素信号输出到对应的列读出线 同时。

    Differential readout from pixels in CMOS sensor
    55.
    发明申请
    Differential readout from pixels in CMOS sensor 审中-公开
    差分读出CMOS传感器中的像素

    公开(公告)号:US20080246869A1

    公开(公告)日:2008-10-09

    申请号:US12081474

    申请日:2008-04-16

    申请人: Alexander Krymski

    发明人: Alexander Krymski

    IPC分类号: H04N5/335

    摘要: The present invention provides an improved pixel readout circuit that compensates for common mode noise during a read out operation. This is accomplished by using a differential readout of the signal and reset value from the desired pixel compared with the reset value from a reference pixel. In this manner common mode noise can be offset and therefore minimized. In one embodiment of the invention, the reference pixel is the nearest neighbor pixel in the same row. In another embodiment, the reference pixel is the nearest neighboring pixel in a different row.

    摘要翻译: 本发明提供一种在读出操作期间补偿共模噪声的改进的像素读出电路。 这是通过使用来自所需像素的信号的差分读出和来自参考像素的复位值的复位值来实现的。 以这种方式,共模噪声可以偏移并因此最小化。 在本发明的一个实施例中,参考像素是同一行中最邻近的像素。 在另一个实施例中,参考像素是不同行中最近的相邻像素。

    Pixel circuit for image sensor
    56.
    发明授权
    Pixel circuit for image sensor 有权
    图像传感器的像素电路

    公开(公告)号:US07205522B2

    公开(公告)日:2007-04-17

    申请号:US11132496

    申请日:2005-05-18

    申请人: Alexander Krymski

    发明人: Alexander Krymski

    IPC分类号: H01L27/00 H01J40/14

    CPC分类号: H01L27/14643 H04N5/3653

    摘要: A pixel circuit for an image sensor uses a common reset transistor for resetting both of a photodiode node and a memory node. Respective transfer gates connect the common reset transistor to the photodiode node and to the memory node, and connect photodiode node and the memory node to each other. A source follower enabled with a row select gate provides a readout signal from the memory node. The use of the common reset transistor and the operational timing of the circuit elements improves fixed pattern noise arising from transistor feedthroughs in the pixel circuit.

    摘要翻译: 用于图像传感器的像素电路使用公共复位晶体管来复位光电二极管节点和存储器节点。 各个传输门将公共复位晶体管连接到光电二极管节点和存储器节点,并将光电二极管节点和存储器节点彼此连接。 使能了行选择栅极的源极跟随器从存储器节点提供读出信号。 使用公共复位晶体管和电路元件的工作时序改善了由像素电路中的晶体管馈通引起的固定模式噪声。

    Method and apparatus for pixel signal binning and interpolation in column circuits of a sensor circuit
    57.
    发明申请
    Method and apparatus for pixel signal binning and interpolation in column circuits of a sensor circuit 有权
    传感器电路的列电路中的像素信号合并和插值的方法和装置

    公开(公告)号:US20070063128A1

    公开(公告)日:2007-03-22

    申请号:US11601749

    申请日:2006-11-20

    申请人: Alexander Krymski

    发明人: Alexander Krymski

    IPC分类号: H01L27/00

    CPC分类号: H04N5/347

    摘要: A binning circuit and related method, wherein pixel signals from column circuits in a sensor circuit are sampled and interpolated. The binning circuit samples analog pixel and reset signals from different sensor circuit column lines. Once a predetermined number of column lines are sampled in the binning circuit, the sampled pixel signals are averaged together in one operation, while the reset signals are averaged together in another operation.

    摘要翻译: 一种分级电路及相关方法,其中来自传感器电路中的列电路的像素信号被采样和内插。 分级电路对来自不同传感器电路列线的模拟像素和复位信号进行采样。 一旦在合并电路中对预定数量的列线进行采样,则在一次操作中采样像素信号被平均化,而在另一操作中复位信号被平均化。

    Pixel circuit for image sensor
    58.
    发明申请
    Pixel circuit for image sensor 有权
    图像传感器的像素电路

    公开(公告)号:US20060261246A1

    公开(公告)日:2006-11-23

    申请号:US11132496

    申请日:2005-05-18

    申请人: Alexander Krymski

    发明人: Alexander Krymski

    IPC分类号: H01L27/00 H01J40/14

    CPC分类号: H01L27/14643 H04N5/3653

    摘要: A pixel circuit for an image sensor uses a common reset transistor for resetting both of a photodiode node and a memory node. Respective transfer gates connect the common reset transistor to the photodiode node and to the memory node, and connect photodiode node and the memory node to each other. A source follower enabled with a row select gate provides a readout signal from the memory node. The use of the common reset transistor and the operational timing of the circuit elements improves fixed pattern noise arising from transistor feedthroughs in the pixel circuit.

    摘要翻译: 用于图像传感器的像素电路使用公共复位晶体管来复位光电二极管节点和存储器节点。 各个传输门将公共复位晶体管连接到光电二极管节点和存储器节点,并将光电二极管节点和存储器节点彼此连接。 使能了行选择栅极的源极跟随器从存储器节点提供读出信号。 使用公共复位晶体管和电路元件的工作时序改善了由像素电路中的晶体管馈通引起的固定模式噪声。

    CMOS aps pixel sensor dynamic range increase
    59.
    发明授权
    CMOS aps pixel sensor dynamic range increase 有权
    CMOS aps像素传感器动态范围增加

    公开(公告)号:US07116366B1

    公开(公告)日:2006-10-03

    申请号:US09653527

    申请日:2000-08-31

    IPC分类号: H04N3/14 H04N5/335

    CPC分类号: H04N5/2355 H04N5/3741

    摘要: An image sensing device, such as a CMOS Active Pixel Sensor device, including an array of pixels. Each pixel has a photoreceptor, a follower transistor connected to the photoreceptor, a select transistor connected to the follower transistor, and a reset transistor. A first bias line provides power to at least a first of the transistors for a first pixel, and a second bias line provides power to at least a second of the transistors of said first pixel different than the first transistor of the first pixel.

    摘要翻译: 诸如CMOS有源像素传感器装置的图像感测装置,包括像素阵列。 每个像素具有感光体,连接到感光体的跟随器晶体管,连接到跟随器晶体管的选择晶体管和复位晶体管。 第一偏置线为第一像素的至少第一晶体管提供功率,并且第二偏置线向不同于第一像素的第一晶体管的所述第一像素的至少第二晶体管提供功率。

    Wide dynamic range operation for CMOS sensor with freeze-frame shutter

    公开(公告)号:US20060181624A1

    公开(公告)日:2006-08-17

    申请号:US11402923

    申请日:2006-04-13

    申请人: Alexander Krymski

    发明人: Alexander Krymski

    IPC分类号: H04N5/335

    CPC分类号: H04N5/37452 H04N5/35581

    摘要: Wide dynamic range operation is used to write a signal in a freeze-frame pixel into the memory twice, first after short integration and then after long integration. The wide dynamic range operation allows the intra-scene dynamic range of images to be extended by combining the image taken with a short exposure time with the image taken with a long exposure time. A freeze-frame pixel is based on voltage sharing between the photodetector PD and the analog memory. Thus, with wide dynamic range operation, the resulting voltage in the memory may be a linear superposition of the two signals representing a bright and a dark image after two operations of sampling.