Double programming methods of a multi-level-cell nonvolatile memory
    51.
    发明授权
    Double programming methods of a multi-level-cell nonvolatile memory 有权
    多级单元非易失性存储器的双重编程方法

    公开(公告)号:US07548462B2

    公开(公告)日:2009-06-16

    申请号:US11771310

    申请日:2007-06-29

    IPC分类号: G11C16/06

    摘要: A method for double programming of multi-level-cell (MLC) programming in a multi-bit-cell (MBC) of a charge trapping memory that includes a plurality of charge trapping memory cells is provided. The double programming method is conducted in two phrases, a pre-program phase and a post-program phase, and applied to a word line (a segment in a word line, a page in a word line, a program unit or a memory unit) of the charge trapping memory. A program unit can be defined by input data in a wide variety of ranges. For example, a program unit can be defined as a portion (such as a page, a group, or a segment) in one word line in which each group is selected for pre-program and pre-program-verify, either sequentially or in parallel with other groups in the same word line.

    摘要翻译: 提供了一种用于在包括多个电荷俘获存储器单元的电荷俘获存储器的多位单元(MBC)中的多电平单元(MLC)编程的双重编程的方法。 双重编程方法在两个短语中进行,即预编程阶段和后期编程阶段,并且应用于字线(字线中的段,字线中的页,程序单元或存储单元 )电荷捕获存储器。 程序单元可以由各种范围内的输入数据定义。 例如,程序单元可以被定义为一个字线中的每个组被选择用于预编程和预编程验证的部分(例如页面,组或段),顺序地或在 与同一字线上的其他组并行。

    METHOD FOR TESTING MEMORY
    52.
    发明申请
    METHOD FOR TESTING MEMORY 有权
    测试记忆的方法

    公开(公告)号:US20090059698A1

    公开(公告)日:2009-03-05

    申请号:US11850061

    申请日:2007-09-05

    IPC分类号: G11C29/00

    CPC分类号: G11C29/08

    摘要: A method for testing a memory includes the following steps. First, data is read from the memory and stored to a first temporary memory. Meanwhile, expected data corresponding to the data from the memory is written into a second temporary memory from a tester. Thereafter, the data in the first temporary memory and the expected data in the second temporary memory are compared with each other to judge whether the memory has an enough operation window.

    摘要翻译: 用于测试存储器的方法包括以下步骤。 首先,从存储器读取数据并存储到第一临时存储器。 同时,与来自存储器的数据对应的期望数据从测试器写入第二临时存储器。 此后,将第一临时存储器中的数据和第二临时存储器中的预期数据彼此进行比较,以判断存储器是否具有足够的操作窗口。

    METHOD FOR ACCESSING MEMORY
    53.
    发明申请

    公开(公告)号:US20080307163A1

    公开(公告)日:2008-12-11

    申请号:US11758802

    申请日:2007-06-06

    IPC分类号: G06F12/00

    摘要: A method for accessing memory is provided. The memory includes many multi-level cells each having at least a storage capable of storing 2n bits, n is a positive integer. The method for accessing memory includes the following steps: Firstly, threshold voltages of the storage are defined into 2n level respectively, wherein each of the 2n level corresponds to a storage status of n bits, and most significant bits of the storage statuses which level 0 to level 2n/2−1 correspond to are different from most significant bits of the storage statuses which level 2n/2 to level 2n−1 correspond to. Next, a target data is divided into n portions and the divided target data is written into n temporary memories respectively. Then, n bits of the target data are written into the multi-level cell. Each of the n bits data is collected from each of the n temporary memories.

    Memory and method for checking reading errors thereof
    54.
    发明申请
    Memory and method for checking reading errors thereof 有权
    用于检查读取错误的存储器和方法

    公开(公告)号:US20080109697A1

    公开(公告)日:2008-05-08

    申请号:US11727256

    申请日:2007-03-26

    IPC分类号: H03M13/00

    摘要: A method for checking reading errors of a memory includes receiving a first data fragment and accordingly generating a first ECC and a first count index; writing the first data fragment, the first ECC and the first count index into a memory; reading the first data fragment from the memory as a second data fragment, generating a second ECC and second count index according to the second data fragment; determining whether the first count index and second count index are equal; determining whether the first ECC and the second ECC are equal; and outputting the second data fragment when the first count index is equal to the second count index and the first ECC is equal to the second ECC.

    摘要翻译: 用于检查存储器的读取错误的方法包括接收第一数据片段并相应地生成第一ECC和第一计数索引; 将第一数据片段,第一ECC和第一计数索引写入存储器; 从所述存储器读取所述第一数据片段作为第二数据片段,根据所述第二数据片段生成第二ECC和第二计数索引; 确定第一计数指数和第二计数指数是否相等; 确定第一ECC和第二ECC是否相等; 并且当所述第一计数索引等于所述第二计数索引并且所述第一ECC等于所述第二ECC时,输出所述第二数据片段。