公开(公告)号：US06664031B2

公开(公告)日：2003-12-16

申请号：US09852377

申请日：2001-05-10

申请人： Jae Chang Jung ,  Cha Won Koh ,  Jin Soo Kim ,  Sung Eun Hong ,  Keun Kyu Kong ,  Ki Ho Baik

发明人： Jae Chang Jung ,  Cha Won Koh ,  Jin Soo Kim ,  Sung Eun Hong ,  Keun Kyu Kong ,  Ki Ho Baik

IPC分类号： G03F726

CPC分类号： G03F7/36

摘要： A process for producing a photoresist pattern is disclosed. In particular, the disclosed process for forming a photoresist pattern reduces or prevents poor quality photoresist patterns formation, especially when a high light absorbing (i.e., low transmittance) photoresist resin is used. In one aspect, a photoresist film which has been exposed to light is treated with a gas phase basic compound to produce a substantially vertical photoresist pattern.

摘要翻译： 公开了一种制备光致抗蚀剂图案的方法。 特别地，所公开的形成光致抗蚀剂图案的方法减少或防止质量差的光致抗蚀剂图案形成，特别是当使用高光吸收（即低透光率）光致抗蚀剂树脂时。 在一个方面，已曝光的光致抗蚀剂膜用气相碱性化合物处理以产生基本垂直的光致抗蚀剂图案。

公开(公告)号：US06818376B2

公开(公告)日：2004-11-16

申请号：US10120197

申请日：2002-04-09

申请人： Geun Su Lee ,  Jae Chang Jung ,  Ki Ho Baik

发明人： Geun Su Lee ,  Jae Chang Jung ,  Ki Ho Baik

IPC分类号： G03F7004

CPC分类号： G03F7/0045 ,  G03F7/039 ,  Y10S430/111

摘要： The present invention provides a cross-linker monomer of formula 1, a photoresist polymer derived from a monomer comprising the same, and a photoresist composition comprising the photoresist polymer. The cross-linking unit of the photoresist polymer can be hydrolyzed (or degraded or broken) by an acid generated from a photoacid generator on the exposed region. It is believed that this acid degradation of the cross-linking unit increases the contrast ratio between the exposed region and the unexposed region. The photoresist composition of the present invention has improved pattern profile, enhanced adhesiveness, excellent resolution, sensitivity, durability and reproducibility. where A, B, R1, R2, R3, R4, R5, R6 and k are as defined herein.

摘要翻译： 本发明提供了式1的交联剂单体，衍生自包含其的单体的光致抗蚀剂聚合物和包含光致抗蚀剂聚合物的光致抗蚀剂组合物。 光致抗蚀剂聚合物的交联单元可以通过暴露区域上的光致酸发生器产生的酸水解（或降解或破坏）。 据信交联单元的酸降解增加了曝光区域与未曝光区域之间的对比度。 本发明的光致抗蚀剂组合物具有改进的图案轮廓，增强的粘合性，优异的分辨率，灵敏度，耐久性和再现性。其中A，B，R1，R2，R3，R4，R5，R6和k如本文所定义。

公开(公告)号：US06753448B2

公开(公告)日：2004-06-22

申请号：US10330869

申请日：2002-12-26

申请人： Geun Su Lee ,  Jae Chang Jung ,  Ki Ho Baik

发明人： Geun Su Lee ,  Jae Chang Jung ,  Ki Ho Baik

IPC分类号： C07C49205

CPC分类号： G03F7/0397 ,  G03F7/0395 ,  Y10S430/106

摘要： The present invention provides compounds represented by formulas 1a and 1b′; and photoresist polymers derived from the same. The present inventors have found that photoresist polymers derived from compounds of formulas 1a, 1b, or mixtures thereof, having an acid labile protecting group have excellent durability, etching resistance, reproducibility, adhesiveness and resolution, and as a result are suitable for lithography processes using deep ultraviolet light sources such as KrF, ArF, VUV, EUV, electron-beam, and X-ray, which can be applied to the formation of the ultrafine pattern of 4G and 16G DRAMs as well as the DRAM below 1G: where R1, R2 and R3 are those defined herein.

摘要翻译： 本发明提供由式1a和1b'表示的化合物; 和衍生自其的光致抗蚀剂聚合物。 本发明人已经发现，具有酸不稳定保护基的衍生自式Ia，1b化合物或其混合物的光致抗蚀剂聚合物具有优异的耐久性，耐腐蚀性，再现性，粘合性和分辨率，因此适用于使用 深紫外光源如KrF，ArF，VUV，EUV，电子束和X射线，可用于形成4G和16G DRAM的超细格局以及低于1G的DRAM：其中R1， R2和R3是本文定义的那些。

公开(公告)号：US06753128B2

公开(公告)日：2004-06-22

申请号：US10272072

申请日：2002-10-16

申请人： Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin

发明人： Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin

IPC分类号： G03F7038

CPC分类号： G03F7/0045 ,  G03F7/0395

摘要： Photoresist additives for preventing the acid generated in the exposed area during the course of a photolithography process from being diffused to the unexposed area, photoresist compositions containing the same, and a process for forming a photoresist pattern using the same. Photoresist compositions comprising the disclosed additive can prevent acid diffusion effectively even if the additive is used in low concentrations, thereby improving LER, resulting in excellent profiles and lowering optimum irradiation energies. wherein, R1, R2, R3, R4 and k are as defined herein.

摘要翻译： 用于防止在光刻工艺过程中在曝光区域产生的酸扩散到未曝光区域的光刻胶添加剂，含有该光致抗蚀剂组合物的光致抗蚀剂组合物和使用其形成光致抗蚀剂图案的方法。 包含所公开的添加剂的光致抗蚀剂组合物即使以低浓度使用添加剂也能有效地防止酸扩散，从而改善LER，导致优异的轮廓并降低最佳照射能量。其中R1，R2，R3，R4和k如本文所定义 。

公开(公告)号：US06749990B2

公开(公告)日：2004-06-15

申请号：US10054095

申请日：2002-01-22

申请人： Jae Chang Jung ,  Geun Su Lee ,  Ki Soo Shin

发明人： Jae Chang Jung ,  Geun Su Lee ,  Ki Soo Shin

IPC分类号： G03F7004

CPC分类号： G03F7/0395 ,  G03F7/0046 ,  Y10S430/108

摘要： A chemical amplification photoresist monomer, a photoresist polymer prepared thereof, and a photoresist composition using the polymer. More specifically, a chemical amplification photoresist polymer comprising a fluorine-containing monomer represented by Chemical Formula 1, and a composition comprising the polymer. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. As the composition has low light absorbance at 193 nm and 157 nm wavelength, it is very useful for forming ultramicro pattern in the process using a light source of far ultraviolet, especially of VUV (157 nm). In the Formula, R1, R2, R3 and R4 is defined in the specification.

摘要翻译： 化学扩增光致抗蚀剂单体，其制备的光致抗蚀剂聚合物和使用该聚合物的光致抗蚀剂组合物。 更具体地说，包括由化学式1表示的含氟单体的化学扩增光致抗蚀剂聚合物和包含该聚合物的组合物。光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和粘合性，并且可在四甲基氢氧化铵（TMAH） 解。 由于组合物在193nm和157nm波长处具有低吸光度，因此在使用远紫外光源（尤其是VUV（157nm））的方法中形成超微图案非常有用。在式中，R1，R2， R3和R4在本说明书中定义。

公开(公告)号：US06653047B2

公开(公告)日：2003-11-25

申请号：US10107650

申请日：2002-03-27

申请人： Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin

发明人： Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin

IPC分类号： G03F7004

CPC分类号： G03F7/0395 ,  G03F7/0046 ,  Y10S430/106

摘要： Photoresist monomers, photoresist polymers prepared therefrom, and photoresist compositions using the polymers are disclosed. More specifically, photoresist polymers comprising a photoresist monomer containing fluorine-substituted benzylcarboxylate represented by Formula 1, and a composition comprising the polymer are disclosed. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and can be developed in aqueous tetramethylammonium hydroxide (TMAH) solution. And, the present photoresist composition is suitable to form a fine pattern using deep ultraviolet light source such as VUV (157 nm), since the composition has low light absorbance at 193 nm and 157 nm wavelength. wherein, X1, X2, R1, l and m are defined in the specification.

摘要翻译： 公开了光阻单体，由其制备的光致抗蚀剂聚合物和使用该聚合物的光致抗蚀剂组合物。 更具体地，公开了包含由式1表示的含氟取代的苄基羧酸酯的光致抗蚀剂单体的光致抗蚀剂聚合物和包含该聚合物的组合物。 光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和粘合性，并且可以在四甲基氢氧化铵（TMAH）水溶液中显影。 并且，本发明的光致抗蚀剂组合物适合于使用深紫外光源如VUV（157nm）形成精细图案，因为该组合物在193nm和157nm波长处具有低吸光度。其中X1，X2，R1，l 和m在说明书中定义。

公开(公告)号：US06627379B2

公开(公告)日：2003-09-30

申请号：US09837394

申请日：2001-04-18

申请人： Jin Soo Kim ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

发明人： Jin Soo Kim ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

IPC分类号： G03F7004

CPC分类号： G03F7/40 ,  G03F7/0045 ,  G03F7/039 ,  Y10S430/106 ,  Y10S430/111

摘要： Photoresist compositions which are useful in a resist flow process are disclosed. A process for forming a contact hole pattern using the disclosed photoresist compositions is also disclosed. The disclosed photoresist resin includes a mixture of two or more polymers. Preferably, a mixture of a first copolymer and a second copolymer are cross-linked, and thus it prevents a contact hole from being collapsed due to over flow which is typically observed during a conventional resist flow process. In addition, the disclosed photoresist compositions allow formation of uniform sized patterns.

公开(公告)号：US06613493B2

公开(公告)日：2003-09-02

申请号：US10037515

申请日：2002-01-04

申请人： Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin

发明人： Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin

IPC分类号： G03F7004

CPC分类号： G03F7/0392 ,  Y10S430/106

摘要： Photoresist polymers having nitro groups (—NO2), and photoresist compositions containing the same. A photoresist pattern having excellent endurance, etching resistance, reproducibility and resolution can be formed by the use of the photoresist copolymer comprising polymerization repeating units represented by Chemical Formula 1a or 1b: wherein, R1, a, b, c, d, e, f, g and h is defined in the specification. Having nitro groups in the polymer, the photoresist polymer results in a low absorbance in the range of 157 nm wavelength, so that it is extremely useful for a photolithography process using, in particular, VUV light source.

摘要翻译： 具有硝基（-NO 2）的光致抗蚀剂聚合物和含有它们的光致抗蚀剂组合物。 可以通过使用由化学式1a或1b表示的聚合重复单元的光致抗蚀剂共聚物形成具有优异的耐久性，耐蚀刻性，再现性和分辨率的光致抗蚀剂图案：其中，R1，a，b，c，d，e，f g和h在本说明书中定义。在聚合物中具有硝基，光致抗蚀剂聚合物在157nm波长范围内导致低吸光度，因此其对于使用特别是VUV光的光刻工艺非常有用 资源。

公开(公告)号：US06806025B2

公开(公告)日：2004-10-19

申请号：US10079348

申请日：2002-02-20

申请人： Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin

发明人： Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin

IPC分类号： G03F7004

CPC分类号： C07D493/08 ,  C07C17/30 ,  C07D495/08 ,  G03F7/0046 ,  G03F7/0395 ,  Y02P20/55 ,  C07C23/18

摘要： Photoresist monomers of following Formula 1, photoresist polymers thereof, and photoresist compositions containing the same. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness to a wafer, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. In addition, the photoresist composition has low light absorbance at 157 nm wavelength, and thus is suitable for a photolithography process using ultraviolet light sources such as VUV (157 nm) in fabricating a minute circuit for a high integration semiconductor device. wherein, X1, X2, Y1, Y2, Y3, Y4, Y5, Y6, Y7, Y8, l and m are as defined in the specification of the invention.

摘要翻译： 下列通式1的光致抗蚀剂单体，其光致抗蚀剂聚合物和含有它们的光致抗蚀剂组合物。 光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和对晶片的粘合性，并且可在四甲基氢氧化铵（TMAH）水溶液中显影。 此外，光致抗蚀剂组合物在157nm波长处具有低吸光度，因此适用于在制造用于高集成半导体器件的微小电路中使用诸如VUV（157nm）的紫外光源的光刻工艺。其中，X1， X2，Y1，Y2，Y3，Y4，Y5，Y6，Y7，Y8，I和m如本发明的说明书中所定义。

公开(公告)号：US06720129B2

公开(公告)日：2004-04-13

申请号：US10107659

申请日：2002-03-27

申请人： Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin

发明人： Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin

IPC分类号： G03P7004

CPC分类号： G03F7/0046 ,  G03F7/0397 ,  Y10S430/108

摘要： Photoresist polymers, and photoresist compositions using the polymer are disclosed. More specifically, photoresist polymers containing maleimide represented by Formula 1. Photoresist compositions including the photoresist polymers have excellent etching resistance, heat resistance and adhesiveness, and development ability in aqueous tetramethylammonium hydroxide (TMAH) solution. As the compositions have low light absorbance at 193 nm and 157 nm wavelength, they are suitable for a process using ultraviolet light source such as VUV (157 nm). wherein, 1, R1, R2, R3, R, R′, R″, R″′, X, a and b are defined in the specification.

摘要翻译： 公开了使用聚合物的光致抗蚀剂聚合物和光致抗蚀剂组合物。 更具体地，含有由式1表示的马来酰亚胺的光致抗蚀剂聚合物。包含光致抗蚀剂聚合物的光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和粘合性以及四甲基氢氧化铵（TMAH）水溶液的显影能力。 由于组合物在193nm和157nm波长处具有低吸光度，它们适用于使用诸如VUV（157nm）的紫外光源的方法，其中1，R1，R2，R3，R，R'，R' '，R“'，X，a和b在说明书中定义。