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    Process for forming a fine pattern using a top-coating composition for a photoresist and product formed by same
    1.
    发明授权
    Process for forming a fine pattern using a top-coating composition for a photoresist and product formed by same 失效
    使用用于光刻胶的顶涂组合物和由其形成的产品形成精细图案的方法

    公开(公告)号：US07329477B2

    公开(公告)日：2008-02-12

    申请号：US10993869

    申请日：2004-11-19

    申请人： Jae Chang Jung ,  Keun Kyu Kong ,  Hyeong Soo Kim ,  Jin Soo Kim ,  Cha Won Koh ,  Sung Eun Hong ,  Geun Su Lee ,  Min Ho Jung ,  Ki Ho Baik

    发明人： Jae Chang Jung ,  Keun Kyu Kong ,  Hyeong Soo Kim ,  Jin Soo Kim ,  Cha Won Koh ,  Sung Eun Hong ,  Geun Su Lee ,  Min Ho Jung ,  Ki Ho Baik

    IPC分类号： G03F7/00 ,  G03F7/004

    CPC分类号： G03F7/11 ,  G03F7/0045

    摘要： The present invention provides a process for using an amine contamination-protecting top-coating composition. Preferably, the amine contamination-protecting top-coating composition of the present invention comprises an amine contamination-protecting compound. Useful amine contamination-protecting compounds include amine derivatives; amino acid derivatives; amide derivatives; urethane derivatives; urea derivatives; salts thereof; and mixtures thereof. The amine contamination-protecting top-coating composition of the present invention reduces or eliminates problems such as T-topping due to a post exposure delay effect and/or difficulties in forming a fine pattern below 100 nm due to acid diffusion associated with conventional lithography processes involving a photoresist polymer containing an alicyclic main chain using a light source, such as KrF (248 nm), ArF (193 nm), F2 (157 nm), E-beam, ion beam and extremely ultraviolet (EUV).

    摘要翻译： 本发明提供了使用胺类污染物保护性顶涂层组合物的方法。 优选地，本发明的胺污染保护性顶涂剂组合物包含胺污染保护化合物。 有用的胺污染保护化合物包括胺衍生物; 氨基酸衍生物; 酰胺衍生物; 氨基甲酸酯衍生物; 尿素衍生物; 的盐; 及其混合物。 本发明的胺污染保护性顶涂剂组合物由于后曝光延迟效应而降低或消除诸如T形顶部的问题和/或由于与常规光刻工艺相关的酸扩散而难以形成低于100nm的精细图案 涉及使用诸如KrF（248nm），ArF（193nm），F 2 N（157nm），电子束，离子束等的光源的含有脂环族主链的光致抗蚀剂聚合物 紫外线（EUV）。

    Photoresist composition for resist flow process
    2.
    发明授权
    Photoresist composition for resist flow process 失效
    用于抗流动过程的光刻胶组合物

    公开(公告)号：US06824951B2

    公开(公告)日：2004-11-30

    申请号：US09947625

    申请日：2001-09-06

    申请人： Geun Su Lee ,  Jin Soo Kim ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    发明人： Geun Su Lee ,  Jin Soo Kim ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    IPC分类号： G03F7004

    CPC分类号： G03F7/0395 ,  G03F7/0392 ,  G03F7/40 ,  Y10S430/106 ,  Y10S430/111

    摘要： A photoresist composition for a resist flow process and a method for forming a contact hole using the same. When a photoresist composition comprising a crosslinking agent of following Formula 1 or Formula 2, is used for a photoresist pattern formation process, it improves resist flow properties, L/S pattern resolution and contrast ratio. wherein R1, R2, R3 and R4 individually represent H or substituted or unsubstituted linear or branched (C1-C10) alkyl. wherein R5, R6 and R7 individually represent H, substituted or unsubstituted linear or branched (C1-C10) alkyl or substituted or unsubstituted linear or branched (C1-C10) alkoxy.

    摘要翻译： 用于抗蚀剂流动方法的光致抗蚀剂组合物和使用其形成接触孔的方法。 当将包含下述通式1或式2的交联剂的光致抗蚀剂组合物用于光致抗蚀剂图形形成工艺时，其改善抗蚀剂流动性，L / S图案分辨率和对比度。其中R1，R2，R3和R4分别代表 H或取代或未取代的直链或支链（C1-C10）烷基，其中R5，R6和R7分别表示H，取代或未取代的直链或支链（C1-C10）烷基或取代或未取代的直链或支链（C1-C10）烷氧基 。

    Cross-linker monomer comprising double bond and photoresist copolymer containing the same
    7.
    发明授权
    Cross-linker monomer comprising double bond and photoresist copolymer containing the same 有权
    包含双键的交联剂单体和含有它们的光致抗蚀剂共聚物

    公开(公告)号：US06818376B2

    公开(公告)日：2004-11-16

    申请号：US10120197

    申请日：2002-04-09

    申请人： Geun Su Lee ,  Jae Chang Jung ,  Ki Ho Baik

    发明人： Geun Su Lee ,  Jae Chang Jung ,  Ki Ho Baik

    IPC分类号： G03F7004

    CPC分类号： G03F7/0045 ,  G03F7/039 ,  Y10S430/111

    摘要： The present invention provides a cross-linker monomer of formula 1, a photoresist polymer derived from a monomer comprising the same, and a photoresist composition comprising the photoresist polymer. The cross-linking unit of the photoresist polymer can be hydrolyzed (or degraded or broken) by an acid generated from a photoacid generator on the exposed region. It is believed that this acid degradation of the cross-linking unit increases the contrast ratio between the exposed region and the unexposed region. The photoresist composition of the present invention has improved pattern profile, enhanced adhesiveness, excellent resolution, sensitivity, durability and reproducibility. where A, B, R1, R2, R3, R4, R5, R6 and k are as defined herein.

    摘要翻译： 本发明提供了式1的交联剂单体，衍生自包含其的单体的光致抗蚀剂聚合物和包含光致抗蚀剂聚合物的光致抗蚀剂组合物。 光致抗蚀剂聚合物的交联单元可以通过暴露区域上的光致酸发生器产生的酸水解（或降解或破坏）。 据信交联单元的酸降解增加了曝光区域与未曝光区域之间的对比度。 本发明的光致抗蚀剂组合物具有改进的图案轮廓，增强的粘合性，优异的分辨率，灵敏度，耐久性和再现性。其中A，B，R1，R2，R3，R4，R5，R6和k如本文所定义。

    Photoresist monomers, polymers thereof and photoresist compositions using the same
    8.
    发明授权
    Photoresist monomers, polymers thereof and photoresist compositions using the same 失效
    光致抗蚀剂单体，其聚合物和使用其的光致抗蚀剂组合物

    公开(公告)号：US06753448B2

    公开(公告)日：2004-06-22

    申请号：US10330869

    申请日：2002-12-26

    申请人： Geun Su Lee ,  Jae Chang Jung ,  Ki Ho Baik

    发明人： Geun Su Lee ,  Jae Chang Jung ,  Ki Ho Baik

    IPC分类号： C07C49205

    CPC分类号： G03F7/0397 ,  G03F7/0395 ,  Y10S430/106

    摘要： The present invention provides compounds represented by formulas 1a and 1b′; and photoresist polymers derived from the same. The present inventors have found that photoresist polymers derived from compounds of formulas 1a, 1b, or mixtures thereof, having an acid labile protecting group have excellent durability, etching resistance, reproducibility, adhesiveness and resolution, and as a result are suitable for lithography processes using deep ultraviolet light sources such as KrF, ArF, VUV, EUV, electron-beam, and X-ray, which can be applied to the formation of the ultrafine pattern of 4G and 16G DRAMs as well as the DRAM below 1G: where R1, R2 and R3 are those defined herein.

    摘要翻译： 本发明提供由式1a和1b'表示的化合物; 和衍生自其的光致抗蚀剂聚合物。 本发明人已经发现，具有酸不稳定保护基的衍生自式Ia，1b化合物或其混合物的光致抗蚀剂聚合物具有优异的耐久性，耐腐蚀性，再现性，粘合性和分辨率，因此适用于使用 深紫外光源如KrF，ArF，VUV，EUV，电子束和X射线，可用于形成4G和16G DRAM的超细格局以及低于1G的DRAM：其中R1， R2和R3是本文定义的那些。

    Photoresist monomer comprising bisphenol derivatives and polymers thereof
    9.
    发明授权
    Photoresist monomer comprising bisphenol derivatives and polymers thereof 失效
    包含双酚衍生物的光敏单体及其聚合物

    公开(公告)号：US06627383B2

    公开(公告)日：2003-09-30

    申请号：US09973630

    申请日：2001-10-09

    申请人： Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    发明人： Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    IPC分类号： G03C1492

    CPC分类号： G03F7/0046 ,  C07C69/65 ,  C07C69/653 ,  C08F20/30 ,  G03F7/039 ,  G03F7/0392 ,  Y02P20/55 ,  Y10S430/108

    摘要： Photoresist monomers of following Formula 1, photoresist polymers thereof, and photoresist compositions using the same. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. In addition, the photoresist composition has low light absorbance at the wavelength of 193 nm, 157 nm and 13 nm, and thus is suitable for a photolithography process using ultraviolet light sources such as VUV (157 nm) and EUV (13 nm) in fabricating a minute circuit for a high integration semiconductor device. wherein, R1, R2, R3, Y, W, m and n are as defined in the specification.

    摘要翻译： 下列通式1的光致抗蚀剂单体，其光致抗蚀剂聚合物和使用其的光致抗蚀剂组合物。 光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和粘合性，并且可在四甲基氢氧化铵（TMAH）水溶液中显影。 此外，光致抗蚀剂组合物在193nm，157nm和13nm波长处具有低吸光度，因此适用于在制造中使用诸如VUV（157nm）和EUV（13nm）的紫外光源的光刻工艺 用于高集成半导体器件的分钟电路。其中R1，R2，R3，Y，W，m和n如本说明书中所定义。