摘要:
A lattice matched silicon germanium (SiGe) semiconductive alloy is formed when a {111} crystal plane of a cubic diamond structure SiGe is grown on the {0001} C-plane of a single crystalline Al2O3 substrate such that a orientation of the cubic diamond structure SiGe is aligned with a orientation of the {0001} C-plane. A lattice match between the substrate and the SiGe is achieved by using a SiGe composition that is 0.7223 atomic percent silicon and 0.2777 atomic percent germanium. A layer of Si1-xGex is formed on the cubic diamond structure SiGe. The value of X (i) defines an atomic percent of germanium satisfying 0.2277
摘要翻译:当晶体匹配的硅锗(SiGe)半导体合金在单晶Al 2 O 2的{0001} C面上生长时,形成立方晶体结构SiGe的{111}晶面, 使得立方晶体结构SiGe的<110>取向与{0001} C面的<1,0,-1.0>取向对准。 通过使用硅原子比为0.7223原子%和0.2777原子百分比的锗的SiGe组合来实现衬底和SiGe之间的晶格匹配。 在立方晶体结构SiGe上形成一层Si 1-x Ge x S x。 X(i)的值定义了满足0.2277
摘要:
Disclosed is a system and method for characterizing optical materials, using steps and equipment for generating a coherent laser light, filtering the light to remove high order spatial components, collecting the filtered light and forming a parallel light beam, splitting the parallel beam into a first direction and a second direction wherein the parallel beam travelling in the second direction travels toward the material sample so that the parallel beam passes through the sample, applying various physical quantities to the sample, reflecting the beam travelling in the first direction to produce a first reflected beam, reflecting the beam that passes through the sample to produce a second reflected beam that travels back through the sample, combining the second reflected beam after it travels back though the sample with the first reflected beam, sensing the light beam produced by combining the first and second reflected beams, and processing the sensed beam to determine sample characteristics and properties.