公开(公告)号：US5856209A

公开(公告)日：1999-01-05

申请号：US821044

申请日：1997-03-20

申请人： Kenji Imanishi

发明人： Kenji Imanishi

IPC分类号： H01L29/73 ,  H01L21/205 ,  H01L21/331 ,  H01L21/338 ,  H01L29/205 ,  H01L29/737 ,  H01L29/778 ,  H01L29/812 ,  H01L21/20

CPC分类号： H01L29/66318 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/0262 ,  H01L29/205 ,  H01L29/7371 ,  H01L29/7783

摘要： A method for fabricating a semiconductor device includes a step of depositing a first compound semiconductor layer by a MOVPE process to have a first conductivity type, doping a surface of the first compound semiconductor layer to the same, first conductivity type, by implementing a planar doping process as a result of decomposition of a gaseous dopant, such that no substantial growth of the first compound semiconductor layer occurs during the planar doping process, and depositing a second compound semiconductor layer of the first conductivity type on the doped surface of the first compound semiconductor layer by a MOVPE process.

摘要翻译： 一种制造半导体器件的方法包括通过MOVPE工艺沉积第一化合物半导体层以具有第一导电类型，通过实施平面掺杂将第一化合物半导体层的表面掺杂到相同的第一导电类型的步骤 作为气态掺杂剂分解的结果，使得在平面掺杂工艺期间不发生第一化合物半导体层的显着生长，并且在第一化合物半导体的掺杂表面上沉积第一导电类型的第二化合物半导体层 层通过MOVPE过程。