公开(公告)号：US09396996B2

公开(公告)日：2016-07-19

申请号：US14848912

申请日：2015-09-09

Applicant: Micron Technology, Inc.

Inventor： Adam L. Olson ,  Kaveri Jain ,  Lijing Gou ,  William R. Brown ,  Ho Seop Eom ,  Xue (Gloria) Chen ,  Anton J. deVilliers

IPC: H01L21/31 ,  H01L21/469 ,  H01L21/768 ,  H01L21/467 ,  H01L23/52 ,  H01L21/027 ,  H01L21/02 ,  H01L21/308

CPC classification number: H01L23/528 ,  H01L21/0226 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/441 ,  H01L21/467 ,  H01L21/76804 ,  H01L21/76816 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/52 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming a semiconductor structure comprises forming pools of acidic or basic material in a substrate structure. A resist is formed over the pools of acidic or basic material and the substrate structure. The acidic or basic material is diffused from the pools into portions of the resist proximal to the pools more than into portions of the resist distal to the pools. Then, the resist is exposed to a developer to remove a greater amount of the resist portions proximal to the pools compared to the resist portions distal to the pools to form openings in the resist. The openings have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure. The method may further comprise forming features in the openings of the resist. The features have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure.

Abstract translation: 形成半导体结构的方法包括在衬底结构中形成酸性或碱性材料的集合体。 在酸性或碱性材料和衬底结构的池之上形成抗蚀剂。 酸性或碱性材料从池中扩散到靠近池的抗蚀剂的部分，而不是远离池的抗蚀剂的部分。 然后，与远离池的抗蚀剂部分相比，抗蚀剂暴露于显影剂以除去更靠近池的抗蚀剂部分，以在抗蚀剂中形成开口。 开口具有靠近基板结构的较宽部分和远离基板结构的较窄部分。 该方法还可以包括在抗蚀剂的开口中形成特征。 这些特征具有靠近基底结构的较宽部分和远离基底结构的较窄部分。

公开(公告)号：US20150380307A1

公开(公告)日：2015-12-31

申请号：US14848912

申请日：2015-09-09

Applicant: Micron Technology, Inc.

Inventor： Adam L. Olson ,  Kaveri Jain ,  Lijing Gou ,  William R. Brown ,  Ho Seop Eom ,  Xue (Gloria) Chen ,  Anton J. deVilliers

IPC: H01L21/768 ,  H01L21/308 ,  H01L21/02

CPC classification number: H01L23/528 ,  H01L21/0226 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/441 ,  H01L21/467 ,  H01L21/76804 ,  H01L21/76816 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/52 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming a semiconductor structure comprises forming pools of acidic or basic material in a substrate structure. A resist is formed over the pools of acidic or basic material and the substrate structure. The acidic or basic material is diffused from the pools into portions of the resist proximal to the pools more than into portions of the resist distal to the pools. Then, the resist is exposed to a developer to remove a greater amount of the resist portions proximal to the pools compared to the resist portions distal to the pools to form openings in the resist. The openings have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure. The method may further comprise forming features in the openings of the resist. The features have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure.

Abstract translation: 形成半导体结构的方法包括在衬底结构中形成酸性或碱性材料的集合体。 在酸性或碱性材料和衬底结构的池之上形成抗蚀剂。 酸性或碱性材料从池中扩散到靠近池的抗蚀剂的部分，而不是远离池的抗蚀剂的部分。 然后，与远离池的抗蚀剂部分相比，抗蚀剂暴露于显影剂以除去更靠近池的抗蚀剂部分，以在抗蚀剂中形成开口。 开口具有靠近基板结构的较宽部分和远离基板结构的较窄部分。 该方法还可以包括在抗蚀剂的开口中形成特征。 这些特征具有靠近基底结构的较宽部分和远离基底结构的较窄部分。