公开(公告)号：US06989664B2

公开(公告)日：2006-01-24

申请号：US10408779

申请日：2003-04-08

申请人： Dong-ha Shim ,  In-sang Song ,  Young-il Kim ,  Sun-hee Park ,  Young-tack Hong ,  Dong-ki Min

发明人： Dong-ha Shim ,  In-sang Song ,  Young-il Kim ,  Sun-hee Park ,  Young-tack Hong ,  Dong-ki Min

IPC分类号： G01R31/00 ,  G01R29/24 ,  G01R27/26

CPC分类号： G01R21/00 ,  G01R1/06772

摘要： An RF power sensor for measuring power for an RF signal using capacitance includes a substrate preferably formed of a semiconductor, such as silicon or of a dielectric substance, a fixture part fixed to the substrate and forming a signal line and ground lines that transmit RF signals, and a bridge connected to the ground lines and floating over the signal line, wherein the bridge is driven by an external driving force, and the external driving force induces capacitance between the bridge and the signal line. Accordingly, power for an RF signal can be measured through the capacitance between the signal line and the bridge. The RF power sensor facilitates matchings, reduces insertion loss, and can be used in a wide bandwidth because it is based on transmission lines having characteristic impedance. Further, high power can be measured depending upon bridge designs.

公开(公告)号：US20050001274A1

公开(公告)日：2005-01-06

申请号：US10838326

申请日：2004-05-05

申请人： Jong-seok Kim ,  Sung-hoon Choa ,  In-sang Song ,  Young-tack Hong

发明人： Jong-seok Kim ,  Sung-hoon Choa ,  In-sang Song ,  Young-tack Hong

IPC分类号： H03H9/15 ,  H03H3/02 ,  H03H9/17 ,  H01L21/00 ,  H01L27/14 ,  H01L29/82

CPC分类号： H03H9/02133 ,  H03H3/02 ,  H03H9/172 ,  Y10T29/42

摘要： A method of manufacturing a film bulk acoustic resonator and the resonator manufactured thereby. The method includes the laminating a sacrificial layer on a semiconductor substrate, removing a predetermined area from the sacrificial layer to realize electric contact between a signal line of the semiconductor substrate and a lower electrode, forming the lower electrode by depositing metal film for lower electrode on the sacrificial layer, by patterning based on a shape of the sacrificial layer, forming a piezoelectric layer by depositing a piezoelectric material on the lower electrode and by patterning based on a shape of the lower electrode, and forming an upper electrode by depositing metal film on the piezoelectric layer and by patterning based on a shape of the piezoelectric layer, wherein at least one of a deposition pressure and a deposition power is controlled to generate upward stress when depositing the metal film for the lower electrode.

摘要翻译： 一种制造薄膜体声波谐振器的方法和由此制造的谐振器。 该方法包括在半导体衬底上层叠牺牲层，从牺牲层去除预定区域以实现半导体衬底的信号线与下电极之间的电接触，通过在下电极上沉积金属膜形成下电极 牺牲层，通过基于牺牲层的形状进行图案化，通过在下电极上沉积压电材料并基于下电极的形状进行图案化形成压电层，并且通过将金属膜沉积在上而形成上电极 压电层和基于压电层的形状的图案化，其中当沉积用于下电极的金属膜时，沉积压力和沉积功率中的至少一个被控制以产生向上的应力。