公开(公告)号：US20100132174A1

公开(公告)日：2010-06-03

申请号：US12684454

申请日：2010-01-08

申请人： Jong-seok KIM ,  Sung-hoon Choa ,  In-sang Song ,  Young-tack Hong

发明人： Jong-seok KIM ,  Sung-hoon Choa ,  In-sang Song ,  Young-tack Hong

IPC分类号： H01L41/22

CPC分类号： H03H9/02133 ,  H03H3/02 ,  H03H9/172 ,  Y10T29/42

摘要： A method of manufacturing a film bulk acoustic resonator and the resonator manufactured thereby. The method includes the laminating a sacrificial layer on a semiconductor substrate, removing a predetermined area from the sacrificial layer to realize electric contact between a signal line of the semiconductor substrate and a lower electrode, forming the lower electrode by depositing metal film for lower electrode on the sacrificial layer, by patterning based on a shape of the sacrificial layer, forming a piezoelectric layer by depositing a piezoelectric material on the lower electrode and by patterning based on a shape of the lower electrode, and forming an upper electrode by depositing metal film on the piezoelectric layer and by patterning based on a shape of the piezoelectric layer, wherein at least one of a deposition pressure and a deposition power is controlled to generate upward stress when depositing the metal film for the lower electrode.

摘要翻译： 一种制造薄膜体声波谐振器的方法和由此制造的谐振器。 该方法包括在半导体衬底上层叠牺牲层，从牺牲层去除预定区域以实现半导体衬底的信号线与下电极之间的电接触，通过在下电极上沉积金属膜形成下电极 牺牲层，通过基于牺牲层的形状进行图案化，通过在下电极上沉积压电材料并基于下电极的形状进行图案化形成压电层，并且通过将金属膜沉积在上而形成上电极 压电层和基于压电层的形状的图案化，其中当沉积用于下电极的金属膜时，沉积压力和沉积功率中的至少一个被控制以产生向上的应力。

公开(公告)号：US07671427B2

公开(公告)日：2010-03-02

申请号：US10838326

申请日：2004-05-05

申请人： Jong-seok Kim ,  Sung-hoon Choa ,  In-sang Song ,  Young-tack Hong

发明人： Jong-seok Kim ,  Sung-hoon Choa ,  In-sang Song ,  Young-tack Hong

IPC分类号： H01L47/00

CPC分类号： H03H9/02133 ,  H03H3/02 ,  H03H9/172 ,  Y10T29/42

摘要： A method of manufacturing a film bulk acoustic resonator and the resonator manufactured thereby. The method includes the laminating a sacrificial layer on a semiconductor substrate, removing a predetermined area from the sacrificial layer to realize electric contact between a signal line of the semiconductor substrate and a lower electrode, forming the lower electrode by depositing metal film for lower electrode on the sacrificial layer, by patterning based on a shape of the sacrificial layer, forming a piezoelectric layer by depositing a piezoelectric material on the lower electrode and by patterning based on a shape of the lower electrode, and forming an upper electrode by depositing metal film on the piezoelectric layer and by patterning based on a shape of the piezoelectric layer, wherein at least one of a deposition pressure and a deposition power is controlled to generate upward stress when depositing the metal film for the lower electrode.

摘要翻译： 一种制造薄膜体声波谐振器的方法和由此制造的谐振器。 该方法包括在半导体衬底上层叠牺牲层，从牺牲层去除预定区域以实现半导体衬底的信号线与下电极之间的电接触，通过在下电极上沉积金属膜形成下电极 牺牲层，通过基于牺牲层的形状进行图案化，通过在下电极上沉积压电材料并基于下电极的形状进行图案化形成压电层，并且通过将金属膜沉积在上而形成上电极 压电层和基于压电层的形状的图案化，其中当沉积用于下电极的金属膜时，沉积压力和沉积功率中的至少一个被控制以产生向上的应力。

公开(公告)号：US07939356B2

公开(公告)日：2011-05-10

申请号：US12684454

申请日：2010-01-08

申请人： Jong-seok Kim ,  Sung-hoon Choa ,  In-sang Song ,  Young-tack Hong

发明人： Jong-seok Kim ,  Sung-hoon Choa ,  In-sang Song ,  Young-tack Hong

IPC分类号： H01L21/00

CPC分类号： H03H9/02133 ,  H03H3/02 ,  H03H9/172 ,  Y10T29/42

摘要： A method of manufacturing a film bulk acoustic resonator and the resonator manufactured thereby. The method includes the laminating a sacrificial layer on a semiconductor substrate, removing a predetermined area from the sacrificial layer to realize electric contact between a signal line of the semiconductor substrate and a lower electrode, forming the lower electrode by depositing metal film for lower electrode on the sacrificial layer, by patterning based on a shape of the sacrificial layer, forming a piezoelectric layer by depositing a piezoelectric material on the lower electrode and by patterning based on a shape of the lower electrode, and forming an upper electrode by depositing metal film on the piezoelectric layer and by patterning based on a shape of the piezoelectric layer, wherein at least one of a deposition pressure and a deposition power is controlled to generate upward stress when depositing the metal film for the lower electrode.

摘要翻译： 一种制造薄膜体声波谐振器的方法和由此制造的谐振器。 该方法包括在半导体衬底上层叠牺牲层，从牺牲层去除预定区域以实现半导体衬底的信号线与下电极之间的电接触，通过在下电极上沉积金属膜形成下电极 牺牲层，通过基于牺牲层的形状进行图案化，通过在下电极上沉积压电材料并基于下电极的形状进行图案化形成压电层，并且通过将金属膜沉积在上而形成上电极 压电层和基于压电层的形状的图案化，其中当沉积用于下电极的金属膜时，沉积压力和沉积功率中的至少一个被控制以产生向上的应力。

公开(公告)号：US20050001274A1

公开(公告)日：2005-01-06

申请号：US10838326

申请日：2004-05-05

申请人： Jong-seok Kim ,  Sung-hoon Choa ,  In-sang Song ,  Young-tack Hong

发明人： Jong-seok Kim ,  Sung-hoon Choa ,  In-sang Song ,  Young-tack Hong

IPC分类号： H03H9/15 ,  H03H3/02 ,  H03H9/17 ,  H01L21/00 ,  H01L27/14 ,  H01L29/82

CPC分类号： H03H9/02133 ,  H03H3/02 ,  H03H9/172 ,  Y10T29/42

摘要： A method of manufacturing a film bulk acoustic resonator and the resonator manufactured thereby. The method includes the laminating a sacrificial layer on a semiconductor substrate, removing a predetermined area from the sacrificial layer to realize electric contact between a signal line of the semiconductor substrate and a lower electrode, forming the lower electrode by depositing metal film for lower electrode on the sacrificial layer, by patterning based on a shape of the sacrificial layer, forming a piezoelectric layer by depositing a piezoelectric material on the lower electrode and by patterning based on a shape of the lower electrode, and forming an upper electrode by depositing metal film on the piezoelectric layer and by patterning based on a shape of the piezoelectric layer, wherein at least one of a deposition pressure and a deposition power is controlled to generate upward stress when depositing the metal film for the lower electrode.

摘要翻译： 一种制造薄膜体声波谐振器的方法和由此制造的谐振器。 该方法包括在半导体衬底上层叠牺牲层，从牺牲层去除预定区域以实现半导体衬底的信号线与下电极之间的电接触，通过在下电极上沉积金属膜形成下电极 牺牲层，通过基于牺牲层的形状进行图案化，通过在下电极上沉积压电材料并基于下电极的形状进行图案化形成压电层，并且通过将金属膜沉积在上而形成上电极 压电层和基于压电层的形状的图案化，其中当沉积用于下电极的金属膜时，沉积压力和沉积功率中的至少一个被控制以产生向上的应力。

公开(公告)号：US07964427B2

公开(公告)日：2011-06-21

申请号：US12759648

申请日：2010-04-13

申请人： Yun-kwon Park ,  Sang-wook Kwon ,  Duck-hwan Kim ,  Jong-seok Kim ,  Sung-hoon Choa ,  In-sang Song

发明人： Yun-kwon Park ,  Sang-wook Kwon ,  Duck-hwan Kim ,  Jong-seok Kim ,  Sung-hoon Choa ,  In-sang Song

IPC分类号： H01L21/00

CPC分类号： H01L25/165 ,  H01L2924/0002 ,  H01L2924/09701 ,  H03H9/1057 ,  H01L2924/00

摘要： A RF system which includes a silicon substrate formed with at least one via-hole filled with conductive material so that both sides of the silicon substrate are electrically connected with one another; at least one flat device formed on one side of the silicon substrate; and at least one RF MEMS device formed on the other side of the silicon substrate.

摘要翻译： 一种RF系统，包括形成有填充有导电材料的至少一个通孔的硅衬底，使得硅衬底的两侧彼此电连接; 形成在所述硅衬底的一侧上的至少一个平面器件; 以及形成在硅衬底的另一侧上的至少一个RF MEMS器件。

公开(公告)号：US07719742B2

公开(公告)日：2010-05-18

申请号：US11368626

申请日：2006-03-07

申请人： Jong-seok Kim ,  Duck-hwan Kim ,  Kuang-woo Nam ,  Yun-kwon Park ,  Seok-chul Yun ,  Sung-hoon Choa ,  In-sang Song

发明人： Jong-seok Kim ,  Duck-hwan Kim ,  Kuang-woo Nam ,  Yun-kwon Park ,  Seok-chul Yun ,  Sung-hoon Choa ,  In-sang Song

IPC分类号： G02B26/00 ,  G02B26/08

CPC分类号： B81B7/0051 ,  B81B7/007

摘要： A MEMS device package and a method of manufacturing the same. The MEMS device package includes a device substrate having a surface on which a MEMS active device is formed, and multiple sealing pads arranged around the MEMS active device so that the sealing pads provide electric paths for the MEMS active device. In addition, the MEMS device package may include a cap substrate bonded to the device substrate through the multiple sealing pads, the cap substrate including a trench, within which the MEMS active device is positioned, and via holes. One or more outer electrode pads may be formed on one surface of the cap substrate to be electrically connected with the multiple sealing pads through the via holes. Because there are several bonding and sealing areas between the device substrate and the cap substrate, the sealing intensity is strengthened.

摘要翻译： 一种MEMS器件封装及其制造方法。 MEMS器件封装包括具有其上形成有MEMS器件的表面的器件衬底以及围绕MEMS有源器件布置的多个密封焊盘，使得密封垫为MEMS有源器件提供电路径。 此外，MEMS器件封装可以包括通过多个密封焊盘结合到器件衬底的帽衬底，帽衬底包括其中定位MEMS有源器件的沟槽和通孔。 可以在盖基板的一个表面上形成一个或多个外电极焊盘，以通过通孔与多个密封垫电连接。 由于在器件基板和盖基板之间存在多个接合和密封区域，所以密封强度得以加强。

公开(公告)号：US20060199297A1

公开(公告)日：2006-09-07

申请号：US11368626

申请日：2006-03-07

申请人： Jong-seok Kim ,  Duck-hwan Kim ,  Kuang-woo Nam ,  Yun-kwon Park ,  Seok-chul Yun ,  Sung-hoon Choa ,  In-sang Song

发明人： Jong-seok Kim ,  Duck-hwan Kim ,  Kuang-woo Nam ,  Yun-kwon Park ,  Seok-chul Yun ,  Sung-hoon Choa ,  In-sang Song

IPC分类号： H01L21/00

CPC分类号： B81B7/0051 ,  B81B7/007

摘要： A MEMS device package and a method of manufacturing the same. The MEMS device package includes a device substrate having a surface on which a MEMS active device is formed, and multiple sealing pads arranged around the MEMS active device so that the sealing pads provide electric paths for the MEMS active device. In addition, the MEMS device package may include a cap substrate bonded to the device substrate through the multiple sealing pads, the cap substrate including a trench, within which the MEMS active device is positioned, and via holes. One or more outer electrode pads may be formed on one surface of the cap substrate to be electrically connected with the multiple sealing pads through the via holes. Because there are several bonding and sealing areas between the device substrate and the cap substrate, the sealing intensity is strengthened.

摘要翻译： 一种MEMS器件封装及其制造方法。 MEMS器件封装包括具有其上形成有MEMS器件的表面的器件衬底以及围绕MEMS有源器件布置的多个密封焊盘，使得密封垫为MEMS有源器件提供电路径。 此外，MEMS器件封装可以包括通过多个密封焊盘结合到器件衬底的帽衬底，帽衬底包括其中定位MEMS有源器件的沟槽和通孔。 可以在盖基板的一个表面上形成一个或多个外电极焊盘，以通过通孔与多个密封垫电连接。 由于在器件基板和盖基板之间存在多个接合和密封区域，所以密封强度得以加强。

公开(公告)号：US07723809B2

公开(公告)日：2010-05-25

申请号：US11342564

申请日：2006-01-31

申请人： Yun-kwon Park ,  Sang-wook Kwon ,  Duck-hwan Kim ,  Jong-seok Kim ,  Sung-hoon Choa ,  In-sang Song

发明人： Yun-kwon Park ,  Sang-wook Kwon ,  Duck-hwan Kim ,  Jong-seok Kim ,  Sung-hoon Choa ,  In-sang Song

IPC分类号： H01L29/78

CPC分类号： H01L25/165 ,  H01L2924/0002 ,  H01L2924/09701 ,  H03H9/1057 ,  H01L2924/00

摘要： A RF system which includes a silicon substrate formed with at least one via-hole filled with conductive material so that both sides of the silicon substrate are electrically connected with one another; at least one flat device formed on one side of the silicon substrate; and at least one RF MEMS device formed on the other side of the silicon substrate.

摘要翻译： 一种RF系统，包括形成有填充有导电材料的至少一个通孔的硅衬底，使得硅衬底的两侧彼此电连接; 形成在所述硅衬底的一侧上的至少一个平面器件; 以及形成在硅衬底的另一侧上的至少一个RF MEMS器件。

公开(公告)号：US20060180897A1

公开(公告)日：2006-08-17

申请号：US11342564

申请日：2006-01-31

申请人： Yun-kwon Park ,  Sang-wook Kwon ,  Duck-hwan Kim ,  Jong-seok Kim ,  Sung-hoon Choa ,  In-sang Song

发明人： Yun-kwon Park ,  Sang-wook Kwon ,  Duck-hwan Kim ,  Jong-seok Kim ,  Sung-hoon Choa ,  In-sang Song

IPC分类号： H01L29/06 ,  H01L21/30

CPC分类号： H01L25/165 ,  H01L2924/0002 ,  H01L2924/09701 ,  H03H9/1057 ,  H01L2924/00

摘要： A RF system which includes a silicon substrate formed with at least one via-hole filled with conductive material so that both sides of the silicon substrate are electrically connected with one another; at least one flat device formed on one side of the silicon substrate; and at least one RF MEMS device formed on the other side of the silicon substrate.

摘要翻译： 一种RF系统，包括形成有填充有导电材料的至少一个通孔的硅衬底，使得硅衬底的两侧彼此电连接; 形成在所述硅衬底的一侧上的至少一个平面器件; 以及形成在硅衬底的另一侧上的至少一个RF MEMS器件。

公开(公告)号：US20130064918A1

公开(公告)日：2013-03-14

申请号：US13621204

申请日：2012-09-15

申请人： Hae-sung Kim ,  Hyoung-soo Ko ,  Seung-bum Hong ,  Jin-seung Sohn ,  Sung-hoon Choa ,  Chee-kheng Lim

发明人： Hae-sung Kim ,  Hyoung-soo Ko ,  Seung-bum Hong ,  Jin-seung Sohn ,  Sung-hoon Choa ,  Chee-kheng Lim

IPC分类号： B29C59/00

CPC分类号： G03F1/14 ,  B29C59/002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  Y10T428/24917

摘要： A nano imprint master and a method of manufacturing the same are provided. The method includes: implanting conductive metal ions into a substrate including quartz to form a conductive layer inside the quartz substrate; coating a resist on the quartz substrate in which the conductive layer is formed, to form a resist coating layer; exposing the resist coating layer to an electron beam to form micropatterns; etching the quartz substrate by using the resist coating layer, in which the micropatterns are formed, as a mask; and removing the resist coating layer to obtain a master in which micropatterns are formed.