Abstract:
A thin film transistor includes a gate electrode, a semiconductor layer, and source and drain electrodes contacting the semiconductor layer. The source and drain electrodes include a metal oxide having a crystal size in a c-axis direction Lc(002) that ranges from 67 Å or more to 144 ∈ or less.
Abstract:
A thin-film transistor array panel includes a gate line disposed on a first substrate, the gate line including a gate electrode, a semiconductor layer disposed on the first substrate, the semiconductor layer including an oxide semiconductor, a data wire layer disposed on the first substrate, the data wire layer including a data line crossing the gate line, a source electrode connected to the data line, and a drain electrode facing the source electrode, a capping layer disposed on the data wire layer, a tilt layer disposed on the capping layer, and a passivation layer disposed on the tilt layer, in which the tilt layer includes a silsesquioxane-based copolymer.
Abstract:
A manufacturing method of an organic light emitting diode (“OLED”) display includes: forming a contact pattern on a panel region of a surface of a board glass, where the board glass includes the panel region, and a peripheral area which surrounds the panel region; contacting the paper glass with a surface of the contact pattern corresponding to the panel region and the surface of the board glass corresponding to the peripheral area; adhering the surface of the board glass corresponding to the peripheral area to a surface of the paper glass; forming an organic light emitting element on the paper glass corresponding to the panel region; and separating the paper glass from the board glass by cutting the paper glass at a position corresponding to an end portion of the panel region adjacent to the peripheral area.