公开(公告)号：US11069681B2

公开(公告)日：2021-07-20

申请号：US16694706

申请日：2019-11-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keomyoung Shin ,  Pankwi Park ,  Seunghun Lee

IPC: H01L27/088 ,  H01L29/26 ,  H01L29/78 ,  H01L29/08 ,  H01L29/06

Abstract: An integrated circuit (IC) device includes a fin-type active region extending lengthwise in a first direction, a plurality of nanosheets overlapping each other in a second direction on a fin top surface of the fin-type active region, and a source/drain region on the fin-type active region and facing the plurality of nanosheets in the first direction. The plurality of nanosheets include a first nanosheet, which is closest to the fin top surface of the fin-type active region and has a shortest length in the first direction, from among the plurality of nanosheets. The source/drain region includes a source/drain main region and a first source/drain protruding region protruding from the source/drain main region. The first source/drain protruding region protrudes from the source/drain main region toward the first nanosheet and overlaps portions of the plurality of nanosheets in the second direction.

公开(公告)号：US20210125983A1

公开(公告)日：2021-04-29

申请号：US16946060

申请日：2020-06-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungin Choi ,  Dahye Kim ,  Jaemun Kim ,  Jinbum Kim ,  Seunghun Lee

IPC: H01L27/088 ,  H01L29/165 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/02 ,  H01L21/306 ,  H01L21/762 ,  H01L29/66

Abstract: Integrated circuit devices may include a fin-type active area, a semiconductor liner contacting a side wall of the fin-type active area and including a protrusion portion protruding outward from the fin-type active area in the vicinity of an edge of an upper surface of the fin-type active area, and an isolation layer spaced apart from the fin-type active area with the semiconductor liner therebetween. To manufacture the integrated circuit devices, a crystalline semiconductor layer covering the fin-type active area with a first thickness and an amorphous semiconductor layer covering the mask pattern with a second thickness may be formed, an extended crystalline semiconductor layer covering the mask pattern may be formed by crystalizing the amorphous semiconductor layer, and a semiconductor liner including a protrusion portion may be formed from the extended crystalline semiconductor layer and the crystalline semiconductor layer.

公开(公告)号：US20200373385A1

公开(公告)日：2020-11-26

申请号：US16821565

申请日：2020-03-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungkeun Lim ,  Unki Kim ,  Yuyeong Jo ,  Yihwan Kim ,  Jinbum Kim ,  Pankwi Park ,  Ilgyou Shin ,  Seunghun Lee

IPC: H01L29/06 ,  H01L29/66 ,  H01L21/02 ,  H01L29/78

Abstract: A semiconductor device includes; an active region; an isolation region defining the active region; a barrier layer on the active region; an upper semiconductor layer on the barrier layer; and a gate structure covering an upper surface, a lower surface, and side surfaces of the upper semiconductor layer in a first direction. The first direction is a direction parallel to an upper surface of the active region, and the barrier layer is disposed between the gate structure and the active region.