公开(公告)号：US20150115243A1

公开(公告)日：2015-04-30

申请号：US14395401

申请日：2013-04-17

Applicant: SONY CORPORATION

Inventor： Yuki Miyanami

IPC: H01L51/44 ,  H01L27/30

CPC classification number: H01L51/448 ,  H01L27/307

Abstract: A solid-state image pickup device includes: an organic photoelectric conversion layer; a passivation layer formed to cover a top of the organic photoelectric conversion layer; and an insulating film formed on the passivation layer and in a slit produced on a level difference in the passivation layer, the insulating film having a smaller refractive index than that of the passivation layer.

Abstract translation: 固态摄像装置包括：有机光电转换层; 形成为覆盖有机光电转换层的顶部的钝化层; 以及绝缘膜，其形成在钝化层上，并且在以钝化层的电平差产生的狭缝中，所述绝缘膜的折射率小于钝化层的折射率。

公开(公告)号：US20140175521A1

公开(公告)日：2014-06-26

申请号：US14133286

申请日：2013-12-18

Applicant: Sony Corporation

Inventor： Yuki Miyanami

IPC: H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/1461 ,  H01L27/14614 ,  H01L27/14641 ,  H01L27/14674

Abstract: A solid-state image pickup device, includes: a semiconductor substrate; a semiconductor layer of a first conductivity type formed in the semiconductor substrate and formed for each pixel; a solid-phase diffusion layer of a second conductivity type formed in a surface portion of the semiconductor substrate, the solid-phase diffusion layer facing the semiconductor layer; and an oxide film containing an impurity element of the second conductivity type and formed by an atomic layer deposition method.

Abstract translation: 一种固态摄像装置，包括：半导体衬底; 形成在所述半导体衬底中并且为每个像素形成的第一导电类型的半导体层; 形成在所述半导体衬底的表面部分中的第二导电类型的固相扩散层，所述固相扩散层面向所述半导体层; 以及含有第二导电类型的杂质元素并通过原子层沉积法形成的氧化物膜。