公开(公告)号：US20200235143A1

公开(公告)日：2020-07-23

申请号：US16841384

申请日：2020-04-06

Applicant: Sony Corporation

Inventor： Yuki Miyanami

IPC: H01L27/146 ,  H04N9/083 ,  H04N5/3745 ,  H04N5/378

Abstract: A solid-state imaging device includes a plurality of photoelectric conversion portions each provided to correspond to each of a plurality of pixels in a semiconductor substrate and receiving incident light through a light sensing surface, and a pixel separation portion that is embedded into a trench provided on a side portion of the photoelectric conversion portion and electrically separates the plurality of pixels in a side of an incident surface of the semiconductor substrate into which the incident light enters. The pixel separation portion is formed by an insulation material which absorbs the incident light entering the light sensing surface.

公开(公告)号：US10412287B2

公开(公告)日：2019-09-10

申请号：US16251559

申请日：2019-01-18

Applicant: SONY CORPORATION

Inventor： Yoshiaki Masuda ,  Yuki Miyanami ,  Hideshi Abe ,  Tomoyuki Hirano ,  Masanari Yamaguchi ,  Yoshiki Ebiko ,  Kazufumi Watanabe ,  Tomoharu Ogita

IPC: H04N5/225 ,  G02B1/118 ,  H04N5/369 ,  H01L27/146 ,  H04N5/359 ,  H04N9/04 ,  H01L31/0232 ,  H04N5/374 ,  H01L31/10

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

公开(公告)号：US10332922B2

公开(公告)日：2019-06-25

申请号：US15719179

申请日：2017-09-28

Applicant: SONY CORPORATION

Inventor： Yuki Miyanami

IPC: H01L27/146 ,  H04N5/357 ,  H04N5/376 ,  H04N5/378 ,  H04N5/225 ,  H04N9/04

Abstract: The present disclosure relates to a solid-state imaging device and a manufacturing method of the same, and an electronic apparatus, capable of more reliably suppressing occurrence of color mixing. A trench is formed between PDs so as to be opened to a light receiving surface side of a semiconductor substrate on which a plurality of the PDs, each of which receives light to generate charges, are formed, an insulating film is embedded in the trench and the insulating film is laminated on a back surface side of the semiconductor substrate. Then, a light shielding portion is formed so as to be laminated on the insulating film and to have a convex shape protruding to the semiconductor substrate at a location corresponding to the trench. The present technology can be applied to a back surface irradiation type CMOS solid-state imaging device.

公开(公告)号：US20180019276A1

公开(公告)日：2018-01-18

申请号：US15719179

申请日：2017-09-28

Applicant: SONY CORPORATION

Inventor： Yuki Miyanami

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/357 ,  H04N5/225 ,  H04N9/04 ,  H04N5/376

CPC classification number: H01L27/14623 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689 ,  H04N5/2253 ,  H04N5/3575 ,  H04N5/376 ,  H04N5/378 ,  H04N9/04

Abstract: The present disclosure relates to a solid-state imaging device and a manufacturing method of the same, and an electronic apparatus, capable of more reliably suppressing occurrence of color mixing. A trench is formed between PDs so as to be opened to a light receiving surface side of a semiconductor substrate on which a plurality of the PDs, each of which receives light to generate charges, are formed, an insulating film is embedded in the trench and the insulating film is laminated on a back surface side of the semiconductor substrate. Then, a light shielding portion is formed so as to be laminated on the insulating film and to have a convex shape protruding to the semiconductor substrate at a location corresponding to the trench. The present technology can be applied to a back surface irradiation type CMOS solid-state imaging device.

公开(公告)号：US09812481B2

公开(公告)日：2017-11-07

申请号：US15257665

申请日：2016-09-06

Applicant: SONY CORPORATION

Inventor： Yuki Miyanami

IPC: H01L27/146 ,  H04N5/357 ,  H04N5/376 ,  H04N5/378 ,  H04N5/225 ,  H04N9/04

CPC classification number: H01L27/14623 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689 ,  H04N5/2253 ,  H04N5/3575 ,  H04N5/376 ,  H04N5/378 ,  H04N9/04

Abstract: The present disclosure relates to a solid-state imaging device and a manufacturing method of the same, and an electronic apparatus, capable of more reliably suppressing occurrence of color mixing. A trench is formed between PDs so as to be opened to a light receiving surface side of a semiconductor substrate on which a plurality of the PDs, each of which receives light to generate charges, are formed, an insulating film is embedded in the trench and the insulating film is laminated on a back surface side of the semiconductor substrate. Then, a light shielding portion is formed so as to be laminated on the insulating film and to have a convex shape protruding to the semiconductor substrate at a location corresponding to the trench. The present technology can be applied to a back surface irradiation type CMOS solid-state imaging device.

公开(公告)号：US09602746B2

公开(公告)日：2017-03-21

申请号：US14313409

申请日：2014-06-24

Applicant: Sony Corporation

Inventor： Yuki Miyanami

IPC: H04N5/3745 ,  H04N5/374 ,  H01L27/146

CPC classification number: H04N5/3745 ,  H01L27/14612 ,  H01L27/14643 ,  H01L27/14689 ,  H04N5/3742

Abstract: An image pickup device includes on a silicon layer: a photodiode provided on each pixel basis to perform photoelectric conversion to generate a charge depending on the light receiving amount; a floating diffusion section configured to store the charge generated by the photodiode; and a transistor configured to output a pixel signal at a voltage in accordance with a level of the charge stored in the floating diffusion section, wherein the image pickup device further includes a hermetically-sealed cavity section inside the silicon layer and on at least one of the underside of the floating diffusion section and the underside of a channel body region of the transistor.

公开(公告)号：US20160013225A1

公开(公告)日：2016-01-14

申请号：US14864163

申请日：2015-09-24

Applicant: SONY CORPORATION

Inventor： Yuki Miyanami

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689 ,  H04N5/2253 ,  H04N5/3575 ,  H04N5/376 ,  H04N5/378 ,  H04N9/04

Abstract: The present disclosure relates to a solid-state imaging device and a manufacturing method of the same, and an electronic apparatus, capable of more reliably suppressing occurrence of color mixing.A trench is formed between PDs so as to be opened to a light receiving surface side of a semiconductor substrate on which a plurality of the PDs, each of which receives light to generate charges, are formed, an insulating film is embedded in the trench and the insulating film is laminated on a back surface side of the semiconductor substrate. Then, a light shielding portion is formed so as to be laminated on the insulating film and to have a convex shape protruding to the semiconductor substrate at a location corresponding to the trench. The present technology can be applied to a back surface irradiation type CMOS solid-state imaging device.

公开(公告)号：US10326920B2

公开(公告)日：2019-06-18

申请号：US16040145

申请日：2018-07-19

Applicant: SONY CORPORATION

Inventor： Yoshiaki Masuda ,  Yuki Miyanami ,  Hideshi Abe ,  Tomoyuki Hirano ,  Masanari Yamaguchi ,  Yoshiki Ebiko ,  Kazufumi Watanabe ,  Tomoharu Ogita

IPC: H04N5/225 ,  G02B1/118 ,  H01L27/146 ,  H01L31/0232 ,  H04N5/369 ,  H01L31/10 ,  H04N5/359 ,  H04N5/374 ,  H04N9/04

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

公开(公告)号：US20180175099A1

公开(公告)日：2018-06-21

申请号：US15835791

申请日：2017-12-08

Applicant: Sony Corporation

Inventor： Itaru Oshiyama ,  Yuki Miyanami ,  Susumu Hiyama ,  Kazuki Tanaka

IPC: H01L27/146

CPC classification number: H01L27/14683 ,  H01L27/1463

Abstract: A solid-state imaging device includes a sensor including an impurity diffusion layer provided in a surface layer of a semiconductor substrate; and an oxide insulating film containing carbon, the oxide insulating film being provided on the sensor.

公开(公告)号：US20180026059A1

公开(公告)日：2018-01-25

申请号：US15719824

申请日：2017-09-29

Applicant: Sony Corporation

Inventor： Yuki Miyanami

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/3745 ,  H04N9/083

CPC classification number: H01L27/1463 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14645 ,  H01L27/14685 ,  H04N5/37457 ,  H04N5/378 ,  H04N9/083

Abstract: A solid-state imaging device includes a plurality of photoelectric conversion portions each provided to correspond to each of a plurality of pixels in a semiconductor substrate and receiving incident light through a light sensing surface, and a pixel separation portion that is embedded into a trench provided on a side portion of the photoelectric conversion portion and electrically separates the plurality of pixels in a side of an incident surface of the semiconductor substrate into which the incident light enters. The pixel separation portion is formed by an insulation material which absorbs the incident light entering the light sensing surface.