公开(公告)号：US10861968B1

公开(公告)日：2020-12-08

申请号：US16427078

申请日：2019-05-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Bo-Feng Young ,  Chih-Yu Chang ,  Sai-Hooi Yeong ,  Chi-On Chui ,  Chih-Hao Wang

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/417 ,  H01L29/51 ,  H01L29/24 ,  H01L29/66 ,  H01L29/40 ,  H01L21/467

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a fin structure that includes a negative capacitance (NC) material. The semiconductor device structure also includes a gate electrode layer, a gate dielectric structure, a source feature, and a drain feature. The gate dielectric structure covers the top surface and the opposing sidewall surfaces of the fin structure. The gate electrode layer is formed over the gate dielectric structure. The source feature and the drain feature are formed in and protrude from the fin structure, and separated from each other by the gate electrode layer.