公开(公告)号：US11031336B2

公开(公告)日：2021-06-08

申请号：US16394938

申请日：2019-04-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chao-Yuan Chang ,  Jui-Lin Chen ,  Kian-Long Lim ,  Feng-Ming Chang

IPC: H01L23/528 ,  H01L27/11 ,  H01L27/092 ,  H01L23/532 ,  H01L21/8238 ,  H01L21/768 ,  H01L23/535

Abstract: An SRAM device and method of forming include pass gate (PG), pull-down (PD), and pull-up (PU) transistors. A first gate line of the PG and a second gate line of the PD and the PU extend in a first direction. A common source/drain of the PG, PD, and PU transistors interposes the first and second gate lines and another source/drain of the PG transistor. A first contact extends from the common source/drain and a second contact extends from the another source/drain. A third contact is disposed above the second contact with a first width in the first direction and a first length in a second direction, first length being greater than the first width.