公开(公告)号：US06818783B2

公开(公告)日：2004-11-16

申请号：US10323480

申请日：2002-12-19

申请人： John Anthony Thomas Norman ,  David Allen Roberts ,  Morteza Farnia ,  Melanie Anne Boze

发明人： John Anthony Thomas Norman ,  David Allen Roberts ,  Morteza Farnia ,  Melanie Anne Boze

IPC分类号： C07F108

CPC分类号： C23C16/45553 ,  C07F1/005 ,  C07F1/08 ,  C07F5/02 ,  C07F7/10

摘要： This invention is directed to a group of novel homologous eight membered ring compounds having a metal, such as copper, reversibly bound in the ring and containing carbon, nitrogen, silicon and/or other metals. A structural representation of the compounds of this invention is shown below: wherein M and M′ are each a metal such as Cu, Ag, Au and Ir; X and X′ can be N or O; Y and Y′ can be Si, C; Sn, Ge, Al, or B; and Z and Z′ can be C, N, or O. Substituents represented by R1, R2, R3, R4, R5, R6, R1′, R2′, R3′, R4′, R5′, and R6′ will vary depending on the ring atom to which they are attached. This invention is also directed to depositing metal and metal-containing films on a substrate, under ALD or CVD conditions, using the above novel compounds as precursors.

摘要翻译： 本发明涉及一组具有可逆地结合在环中并含有碳，氮，硅和/或其它金属的金属如铜的新型同源八元环化合物。 本发明化合物的结构表示如下：其中M和M'各自为金属如Cu，Ag，Au和Ir; X和X'可以是N或O; Y和Y'可以是Si，C; Sn，Ge，Al或B; Z，Z'可以是C，N或O.取代基由R1，R2，R3，R4，R5，R6，R1'，R2'，R3'，R4'，R5'和R6' 在它们所连接的环原子上。 本发明还涉及使用上述新型化合物作为前体，在ALD或CVD条件下在基底上沉积金属和含金属膜。

公开(公告)号：US06500499B1

公开(公告)日：2002-12-31

申请号：US09522634

申请日：2000-03-10

申请人： Yoshihide Senzaki ,  Arthur Kenneth Hochberg ,  David Allen Roberts ,  John Anthony Thomas Norman ,  Glenn Baldwin Alers ,  Robert McLemore Fleming

发明人： Yoshihide Senzaki ,  Arthur Kenneth Hochberg ,  David Allen Roberts ,  John Anthony Thomas Norman ,  Glenn Baldwin Alers ,  Robert McLemore Fleming

IPC分类号： B05D306

CPC分类号： C23C16/4481 ,  C23C16/40

摘要： Complex mixed metal containing thin films can be deposited by CVD from liquid mixtures of metal complexes without solvent by direct liquid injection and by other precursor dispersing method such as aerosol delivery with subsequent annealing to improve electrical properties of the deposited films. This process has potential for commercial success in microelectronics device fabrication of dielectrics, ferroelectrics, barrier metals/electrodes, superconductors, catalysts, and protective coatings. Application of this process, particularly the CVD of ZrSnTiOx (zirconium tin titanate, or ZTT) and HfSnTiOx (hafnium tin titanate, or HTT) thin films has been studied successfully.

摘要翻译： 通过CVD从金属络合物的液体混合物中通过直接液体注入和通过其它前体分散方法如气溶胶递送以及随后的退火以改善沉积膜的电性能，可以通过CVD沉积复杂的含金属的薄膜。 该方法在电介质，铁电体，阻挡金属/电极，超导体，催化剂和保护涂层的微电子器件制造中具有商业成功的潜力。 已经研究了该方法的应用，特别是ZrSnTiOx（锆钛酸锌或ZTT）和HfSnTiOx（钛酸铪钛酸盐或HTT）薄膜的CVD。