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1.发明授权Deposition and annealing of multicomponent ZrSnTi and HfSnTi oxide thin films using solventless liquid mixture of precursors 失效使用无溶剂的前体液体混合物沉积和退火多组分ZrSnTi和HfSnTi氧化物薄膜公开(公告)号：US06500499B1
公开(公告)日：2002-12-31
申请号：US09522634
申请日：2000-03-10
申请人： Yoshihide Senzaki , Arthur Kenneth Hochberg , David Allen Roberts , John Anthony Thomas Norman , Glenn Baldwin Alers , Robert McLemore Fleming
发明人： Yoshihide Senzaki , Arthur Kenneth Hochberg , David Allen Roberts , John Anthony Thomas Norman , Glenn Baldwin Alers , Robert McLemore Fleming
IPC分类号： B05D306
CPC分类号： C23C16/4481 , C23C16/40
摘要： Complex mixed metal containing thin films can be deposited by CVD from liquid mixtures of metal complexes without solvent by direct liquid injection and by other precursor dispersing method such as aerosol delivery with subsequent annealing to improve electrical properties of the deposited films. This process has potential for commercial success in microelectronics device fabrication of dielectrics, ferroelectrics, barrier metals/electrodes, superconductors, catalysts, and protective coatings. Application of this process, particularly the CVD of ZrSnTiOx (zirconium tin titanate, or ZTT) and HfSnTiOx (hafnium tin titanate, or HTT) thin films has been studied successfully.
摘要翻译： 通过CVD从金属络合物的液体混合物中通过直接液体注入和通过其它前体分散方法如气溶胶递送以及随后的退火以改善沉积膜的电性能，可以通过CVD沉积复杂的含金属的薄膜。 该方法在电介质，铁电体，阻挡金属/电极，超导体，催化剂和保护涂层的微电子器件制造中具有商业成功的潜力。 已经研究了该方法的应用，特别是ZrSnTiOx（锆钛酸锌或ZTT）和HfSnTiOx（钛酸铪钛酸盐或HTT）薄膜的CVD。
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公开(公告)号：US6060406A
公开(公告)日：2000-05-09
申请号：US86252
申请日：1998-05-28
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28238 , H01L29/517 , H01L21/31604 , H01L29/4966 , H01L29/4975 , H01L29/513
摘要： The specification describes silicon MOS devices with gate dielectrics having the composition Ta.sub.1-x Al.sub.x O.sub.y, where x is 0.03-0.7 and y is 1.5-3, Ta.sub.1-x Si.sub.x O.sub.y, where x is 0.05-0.15, and y is 1.5-3, and Ta.sub.1-x-z Al.sub.x Si.sub.z O.sub.y, where 0.7>x+z>0.05, z
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公开(公告)号：US5659181A
公开(公告)日：1997-08-19
申请号：US393494
申请日：1995-03-02
申请人： Paul Michael Bridenbaugh , Robert McLemore Fleming , Robert Cort Haddon , Robert Alfred Laudise , Theo Siegrist
发明人： Paul Michael Bridenbaugh , Robert McLemore Fleming , Robert Cort Haddon , Robert Alfred Laudise , Theo Siegrist
IPC分类号： H01L51/05 , G02F1/1368 , H01L29/786 , H01L51/30 , H01L51/40 , H01L35/24 , H01L51/00
CPC分类号： H01L51/0068 , H01L51/0036 , G02F1/1368 , H01L51/0541 , H01L51/0545
摘要： A previously unknown phase of .alpha.-hexathienyl, designated .alpha.-6T/HT, exhibits diffraction peaks at 2.theta.=4.31.degree., 8.64.degree., 12.96.degree., 17.32.degree., 26.15.degree. and 29.08.degree. in a CuK.sub..alpha. powder X-ray diffraction pattern, and is expected to have properties (e.g., high hole mobility) that make the phase desirable for use in, e.g., thin film transistors. Substitution of thin films of .alpha.-6T/HT for prior art organic thin films in thin film transistors and other devices is contemplated.
摘要翻译： 称为α-6T / HT的α-己二烯以前未知的相在CuKα粉末X射线衍射图中在2θ= 4.31°，8.64°，12.96°，17.32°，26.15°和29.08°处显示出衍射峰 ，并且预期具有使相位期望用于例如薄膜晶体管的性质（例如，高空穴迁移率）。 考虑在薄膜晶体管和其它器件中替代现有技术的有机薄膜的α-6T / HT薄膜。
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公开(公告)号：US5977582A
公开(公告)日：1999-11-02
申请号：US862907
申请日：1997-05-23
摘要： A dielectric layer consisting essentially of Ta, Al, oxygen and nitrogen can have advantageous properties that make such a layer useful for thin film capacitors, typically capacitors for Si integrated circuits. For instance, a significantly greater fraction of capacitors according to the invention than of prior art tantalum oxide capacitors can store a charge of 3 .mu.coulomb/cm.sup.2. In a currently preferred embodiment, the dielectric layer has composition Ta.sub.1-y Al.sub.y O.sub.x N.sub.z, with y.about.0.1, x.about.2.4, and z.about.0.02. The dielectric layer can be formed by sputter deposition or any other appropriate deposition technique, e.g., chemical vapor deposition.
摘要翻译： 基本上由Ta，Al，氧和氮组成的电介质层可以具有使这种层用于薄膜电容器（通常用于Si集成电路的电容器）的有利特性。 例如，根据本发明的电容器比现有技术的钽氧化物电容器显着更大的部分可以存储3ul库仑/ cm 2的电荷。 在当前优选的实施例中，电介质层具有组成Ta1-yAlyOxNz，其中y DIFFERENCE 0.1，x差异2.4和z差值0.02。 介电层可以通过溅射沉积或任何其它合适的沉积技术形成，例如化学气相沉积。
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公开(公告)号：US06590241B1
公开(公告)日：2003-07-08
申请号：US09519909
申请日：2000-03-07
IPC分类号： H01L2976
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28238 , H01L21/31604 , H01L29/4966 , H01L29/4975 , H01L29/513 , H01L29/517
摘要： The specification describes silicon MOS devices with gate dielectrics having the composition Ta1−xAlxOy, where x is 0.03-0.7 and y is 1.5-3, Ta1−xSixOy, where x is 0.05-0.15, and y is 1.5-3, and Ta1−x−zAlxSizOy, where 0.7>x+z>0.05, z
摘要翻译： 该说明书描述了具有组成为Ta1-xAlxOy的栅极电介质的硅MOS器件，其中x为0.03-0.7，y为1.5-3，Ta1-xSixOy，其中x为0.05-0.15，y为1.5-3，Ta1- x-zAlxSizOy，其中0.7> x + z> 0.05，z <0.15，y为1.5-3。 与标准的SiO 2栅极电介质材料相比，这些材料提供了改进的介电性能，并且在高温下基本上保持无定形。 这阻碍了SiO 2界面层的形成，否则这主要是栅极介电性质，并降低了使用高介电材料的总体有效性。
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6.发明授权Electro-optic device including a buffer layer of transparent conductive material 有权电光装置包括透明导电材料的缓冲层公开(公告)号：US06480633B1
公开(公告)日：2002-11-12
申请号：US09335125
申请日：1999-06-17
申请人： Robert McLemore Fleming , Rafael Nathan Kleiman , Jueinai Raynien Kwo , John William Osenbach , Gordon Albert Thomas
发明人： Robert McLemore Fleming , Rafael Nathan Kleiman , Jueinai Raynien Kwo , John William Osenbach , Gordon Albert Thomas
IPC分类号： G02F1035
CPC分类号： G02F1/035 , G02F1/225 , G02F2201/07
摘要： An electro-optic device comprising an electro-optic crystal substrate, an optical waveguide path in the crystal adjacent the substrate surface and an electrode spaced from the surface by a buffer layer is provided with enhanced operating stability by forming the buffer layer of a transparent electronically conductive material. Preferred buffer materials are electronically conductive gallium-indium-oxide and electronically conductive zinc-indium-tin-oxide.
摘要翻译： 包括电光晶体基板的电光装置，与基板表面相邻的晶体中的光波导路径和通过缓冲层与表面隔开的电极通过形成透明电子的缓冲层而具有增强的操作稳定性 导电材料。 优选的缓冲材料是电子导电的镓铟氧化物和电子导电的锌 - 铟 - 锡氧化物。
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