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    CONTROL DEVICE AND CONTROL METHOD FOR VEHICLE
    51.
    发明申请
    CONTROL DEVICE AND CONTROL METHOD FOR VEHICLE 有权
    车辆的控制装置和控制方法

    公开(公告)号：US20110112732A1

    公开(公告)日：2011-05-12

    申请号：US13003528

    申请日：2009-06-18

    申请人： Koki Ueno

    发明人： Koki Ueno

    IPC分类号： F16H61/28

    CPC分类号： B60T1/005 ,  B60R25/06 ,  F16H61/32 ,  F16H63/483 ,  F16H2061/283 ,  F16H2061/326

    摘要： An ECU executes a program including: a step of starting up an SBW system if lock release is detected; a step of starting up a timer if setting of a reference location corresponding to a P position has been completed; and a step of stopping the SBW system if a power supply is not turned on until a predetermined time T has elapsed.

    摘要翻译： ECU执行程序，包括：检测到锁定释放时启动SBW系统的步骤; 如果对应于P位置的参考位置的设置已经完成，启动定时器的步骤; 以及如果在预定时间T过去之前电源未被接通，则停止SBW系统的步骤。

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    52.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20090184390A1

    公开(公告)日：2009-07-23

    申请号：US12407843

    申请日：2009-03-20

    申请人： Koki Ueno

    发明人： Koki Ueno

    IPC分类号： H01L23/58

    CPC分类号： H01L27/115 ,  H01L21/76224 ,  H01L27/11521 ,  H01L27/11524

    摘要： A semiconductor device is disclosed, which includes a semiconductor substrate including a device region and an isolation region having an isolation trench, a gate electrode formed on the device region through a gate insulating film, a first isolation insulating film formed in the isolation trench, the first isolation insulating film having a recess, a second isolation insulating film formed on the first isolation insulating film to be filled in the recess, the second isolation insulating film having an upper surface higher than the upper surface of the semiconductor substrate, and an impurity region formed in the semiconductor substrate under the first isolation insulating film, the impurity region having a conductivity type the same as a conductivity type of the semiconductor substrate, an impurity concentration higher than an impurity concentration of the semiconductor substrate, and a width of the impurity region smaller than a width of the isolation trench.

    摘要翻译： 公开了一种半导体器件，其包括：半导体衬底，其包括器件区域和具有隔离沟槽的隔离区域，通过栅极绝缘膜形成在器件区域上的栅电极，形成在隔离沟槽中的第一隔离绝缘膜， 具有凹部的第一隔离绝缘膜，形成在第一隔离绝缘膜上的第二隔离绝缘膜，填充在凹部中，第二隔离绝缘膜的上表面高于半导体衬底的上表面;以及杂质区域 形成在第一隔离绝缘膜下的半导体衬底中，具有与半导体衬底的导电类型相同的导电类型的杂质区域，高于半导体衬底的杂质浓度的杂质浓度和杂质区域的宽度 小于隔离沟槽的宽度。

    NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND PROCESS OF MANUFACTURING THE SAME
    53.
    发明申请
    NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND PROCESS OF MANUFACTURING THE SAME 有权
    非挥发性半导体存储器件及其制造方法

    公开(公告)号：US20090149011A1

    公开(公告)日：2009-06-11

    申请号：US12367590

    申请日：2009-02-09

    申请人： Toshitake YAEGASHI ,  Koki Ueno

    发明人： Toshitake YAEGASHI ,  Koki Ueno

    IPC分类号： H01L21/3205

    CPC分类号： H01L21/823481 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524

    摘要： In device isolation trenches, a first device-isolation insulator film is formed to have recesses thereon and a second device-isolation insulator film is formed in the recesses. The uppermost portions at both ends of the first device-isolation insulator film are located higher than the uppermost portions at both ends of the second device-isolation insulator film.

    摘要翻译： 在器件隔离沟槽中，第一器件隔离绝缘膜形成为具有凹槽，并且在凹部中形成第二器件隔离绝缘膜。 第一器件隔离绝缘膜的两端的最上部位于比第二器件隔离绝缘膜的两端的最上部更高位置。

    "> NONVOLATILE SEMICONDUCTOR MEMORY DEVICE WHICH REALIZES
    54.
    发明申请
    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE WHICH REALIZES "1" WRITE OPERATION BY BOOSTING CHANNEL POTENTIAL 失效
    非线性半导体存储器件通过提高通道电位实现“1”写操作

    公开(公告)号：US20080304324A1

    公开(公告)日：2008-12-11

    申请号：US12132426

    申请日：2008-06-03

    申请人： Hiroyuki NAGASHIMA ,  Koki Ueno

    发明人： Hiroyuki NAGASHIMA ,  Koki Ueno

    IPC分类号： G11C16/06

    CPC分类号： G11C16/0483 ,  G11C16/10 ,  G11C16/12

    摘要： A nonvolatile semiconductor memory device includes a memory cell array having a plurality of cell units each including a preset number of memory cells and select gate transistors on drain and source sides. The nonvolatile semiconductor memory device includes a voltage control circuit to prevent occurrence of an erroneous write operation due to excessively high boost voltage of a channel when “1” is written into the memory cell.

    摘要翻译： 非易失性半导体存储器件包括具有多个单元单元的存储单元阵列，每个单元单元包括预设数量的存储单元和漏极和源极侧的选择栅极晶体管。 非易失性半导体存储器件包括电压控制电路，用于当“1”被写入存储器单元时，防止由于通道的过高的升压电压而导致的错误写入操作的发生。

    Semiconductor device having isolation region and method of manufacturing the same
    55.
    发明授权
    Semiconductor device having isolation region and method of manufacturing the same 失效
    具有隔离区域的半导体器件及其制造方法

    公开(公告)号：US07238563B2

    公开(公告)日：2007-07-03

    申请号：US10793923

    申请日：2004-03-08

    申请人： Norihisa Arai ,  Takeshi Nakano ,  Koki Ueno ,  Akira Shimizu

    发明人： Norihisa Arai ,  Takeshi Nakano ,  Koki Ueno ,  Akira Shimizu

    IPC分类号： H01L21/336

    CPC分类号： H01L21/823481 ,  H01L21/2652 ,  H01L21/76237 ,  H01L29/0619 ,  H01L29/78

    摘要： A trench isolation region is formed in a surface region of a semiconductor substrate to form a MOS type element region. A mask layer having an opening portion is formed on the semiconductor layer, the opening portion continuously ranging on the entire surface of the MOS type element region and on part of the trench isolation region provided around the MOS type element region. A first impurity ion is implanted into the entire surface via the mask layer to form a peak of the impurity profile is situated in the semiconductor layer under the bottom surface of the shallow trench isolation region. A second impurity ion is implanted into the entire surface via the mask layer to form a peak of the impurity profile is situated on the midway of the depth direction of the trench isolation region. Then, the first and second impurity ions are activated.

    摘要翻译： 沟槽隔离区域形成在半导体衬底的表面区域中以形成MOS型元件区域。 具有开口部的掩模层形成在半导体层上，开口部在MOS型元件区域的整个表面和设置在MOS型元件区域周围的沟槽隔离区域的一部分上连续地范围。 通过掩模层将第一杂质离子注入整个表面，以形成杂质分布的峰位于浅沟槽隔离区的底表面下的半导体层中。 通过掩模层将第二杂质离子注入整个表面以形成杂质分布的峰位于沟槽隔离区的深度方向的中间。 然后，第一和第二杂质离子被激活。

    Control device and control method for vehicle
    56.
    发明授权
    Control device and control method for vehicle 有权
    车辆控制装置及控制方法

    公开(公告)号：US09580051B2

    公开(公告)日：2017-02-28

    申请号：US13003528

    申请日：2009-06-18

    申请人： Koki Ueno

    发明人： Koki Ueno

    IPC分类号： B60T1/00 ,  B60R25/06 ,  F16H61/32 ,  F16H63/48 ,  F16H61/28

    CPC分类号： B60T1/005 ,  B60R25/06 ,  F16H61/32 ,  F16H63/483 ,  F16H2061/283 ,  F16H2061/326

    摘要： An ECU executes a program including: a step of starting up an SBW system if lock release is detected; a step of starting up a timer if setting of a reference location corresponding to a P position has been completed; and a step of stopping the SBW system if a power supply is not turned on until a predetermined time T has elapsed.

    摘要翻译： ECU执行程序，包括：检测到锁定释放时启动SBW系统的步骤; 如果对应于P位置的参考位置的设置已经完成，启动定时器的步骤; 以及如果在预定时间T过去之前电源未被接通，则停止SBW系统的步骤。

    Hybrid vehicle drive controller
    57.
    发明授权
    Hybrid vehicle drive controller 有权
    混合动力车驱动控制器

    公开(公告)号：US09193349B2

    公开(公告)日：2015-11-24

    申请号：US14387616

    申请日：2012-03-26

    申请人： Hiroaki Kiyokami ,  Koki Ueno ,  Yoshiteru Hagino ,  Satoru Takahashi

    发明人： Hiroaki Kiyokami ,  Koki Ueno ,  Yoshiteru Hagino ,  Satoru Takahashi

    IPC分类号： B60W10/08 ,  B60W20/00 ,  B60K6/445 ,  B60K6/387 ,  B60W10/02 ,  B60W10/12 ,  B60W10/196 ,  B60K6/38

    CPC分类号： B60W20/00 ,  B60K6/387 ,  B60K6/445 ,  B60K2006/381 ,  B60W10/02 ,  B60W10/08 ,  B60W10/12 ,  B60W10/196 ,  B60W20/13 ,  Y02T10/6239 ,  Y10S903/93 ,  Y10T477/23

    摘要： A drive control device for a hybrid vehicle is provided with a differential device including four rotary elements; and an engine, a first electric motor, a second electric motor and an output rotary member which are respectively connected to the four rotary elements. One of the four rotary elements is constituted by a rotary component of a first differential mechanism and a rotary component of a second differential mechanism which are selectively connected to each other through a clutch, and one of the rotary components of the first and second differential mechanisms which are selectively connected to each other through the clutch is selectively fixed to a stationary member through a brake. The drive control device comprises: a clutch engagement control portion configured to place the clutch in an engaged state when a warm-up operation of the hybrid vehicle is required.

    摘要翻译： 用于混合动力车辆的驱动控制装置设置有包括四个旋转元件的差速装置; 以及分别连接到四个旋转元件的发动机，第一电动机，第二电动机和输出旋转部件。 四个旋转元件中的一个由第一差速机构的旋转部件和第二差速机构的旋转部件通过离合器彼此选择性地连接而构成，第一和第二差速机构的旋转部件中的一个 其通过离合器彼此选择性地连接，通过制动器选择性地固定到固定构件。 驱动控制装置包括：离合器接合控制部，被配置为当需要混合动力车辆的预热操作时将离合器置于接合状态。