公开(公告)号：US5962904A

公开(公告)日：1999-10-05

申请号：US931336

申请日：1997-09-16

Applicant: Yongjun Hu

Inventor： Yongjun Hu

IPC: H01L21/28 ,  H01L29/49 ,  H01L29/12

CPC classification number: H01L21/28061 ,  H01L29/4941 ,  Y10S257/915

Abstract: Disclosed is a gate electrode stack structure that uses a refractory metal silicon nitride layer as a diffusion barrier. The gate electrode stack has several layers, including a gate oxide layer over the semiconductor substrate, a polysilicon layer over the gate oxide layer, and the diffusion barrier between the polysilicon layer and a layer of electrically conductive material above. The diffusion barrier, which is preferably composed of a substantially amorphous refractory metal silicon nitride such as tungsten silicon nitride, of does not oxidize when an oxidation process is applied to the gate electrode stack. Moreover, the diffusion barrier substantially prevents diffusion of the electrically conductive material into the polysilicon during heating processes. The refractory metal silicon nitride maintains a bulk resistivity less than 2,000 microhm-cm, thereby preserving satisfactory conductivity in the gate electrode stack. A process for forming the gate electrode stack and diffusion barrier is also disclosed.

Abstract translation: 公开了使用难熔金属氮化硅层作为扩散阻挡层的栅电极堆叠结构。 栅极电极堆叠具有数个层，包括半导体衬底上的栅极氧化物层，栅极氧化物层上方的多晶硅层，以及多晶硅层与上述导电材料层之间的扩散阻挡层。 优选由基本上无定形的难熔金属氮化硅如氮化硅钨构成的扩散阻挡层在氧化工艺施加到栅极电极叠层时不会氧化。 此外，扩散阻挡层基本上防止在加热过程中导电材料扩散到多晶硅中。 难熔金属氮化硅保持体电阻率小于2,000微欧姆 - 厘米，从而保持栅电极堆叠中令人满意的导电性。 还公开了一种用于形成栅极电极堆叠和扩散阻挡层的工艺。