公开(公告)号：US20070117308A1

公开(公告)日：2007-05-24

申请号：US11655638

申请日：2007-01-17

Applicant: Yongjun Hu

Inventor： Yongjun Hu

IPC: H01L21/8244 ,  H01L23/58 ,  H01L21/31

CPC classification number: H01L27/10855 ,  H01L21/28568 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/7687 ,  H01L21/76873 ,  H01L21/76879 ,  H01L23/485 ,  H01L23/53238 ,  H01L28/65 ,  H01L28/75 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention includes methods of utilizing compositions containing iridium and tantalum in semiconductor constructions, and includes semiconductor constructions comprising compositions containing iridium and tantalum. The compositions containing iridium and tantalum can be utilized as barrier materials, and in some aspects can be utilized as barriers to copper diffusion.

Abstract translation: 本发明包括在半导体结构中使用含有铱和钽的组合物的方法，并且包括包含含有铱和钽的组合物的半导体构造。 含有铱和钽的组合物可用作阻挡材料，并且在一些方面可用作铜扩散的阻挡层。

公开(公告)号：US20060292786A1

公开(公告)日：2006-12-28

申请号：US11167011

申请日：2005-06-24

Applicant: Yongjun Hu

Inventor： Yongjun Hu

IPC: H01L21/8244 ,  H01L29/94

CPC classification number: H01L27/10855 ,  H01L21/28568 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/7687 ,  H01L21/76873 ,  H01L21/76879 ,  H01L23/485 ,  H01L23/53238 ,  H01L28/65 ,  H01L28/75 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention includes methods of utilizing compositions containing iridium and tantalum in semiconductor constructions, and includes semiconductor constructions comprising compositions containing iridium and tantalum. The compositions containing iridium and tantalum can be utilized as barrier materials, and in some aspects can be utilized as barriers to copper diffusion.

Abstract translation: 本发明包括在半导体结构中使用含有铱和钽的组合物的方法，并且包括包含含有铱和钽的组合物的半导体构造。 含有铱和钽的组合物可用作阻挡材料，并且在一些方面可用作铜扩散的阻挡层。

公开(公告)号：US20060238457A1

公开(公告)日：2006-10-26

申请号：US11456523

申请日：2006-07-10

Applicant: Yongjun Hu

Inventor： Yongjun Hu

IPC: G09G3/22 ,  G09G3/20

CPC classification number: H01J9/025 ,  H01J1/3044 ,  H01J2201/30426

Abstract: Some embodiments of the invention include structures and methods for a field emitter display device with a coating and an implantation layer underneath a surface of the emitter. Other embodiments are described and claimed.

Abstract translation: 本发明的一些实施例包括用于在发射器的表面下方具有涂层和注入层的场发射器显示装置的结构和方法。 描述和要求保护其他实施例。

公开(公告)号：US07105997B1

公开(公告)日：2006-09-12

申请号：US09387164

申请日：1999-08-31

Applicant: Yongjun Hu

Inventor： Yongjun Hu

IPC: H01J1/30 ,  H01J9/00

CPC classification number: H01J9/025 ,  H01J1/3044 ,  H01J2201/30426

Abstract: Structures and methods to ease electron emission and limit outgassing so as to inhibit degradation to the electron beam of a field emitter device are described. In one method to ease such electron emission, a layer of low relative dielectric constant material is formed under the surface of the field emitter tip. Another method is to coat the field emitter tip with a low relative dielectric constant substance or compound to form a layer and then cover that layer with a thin layer of the material of the field emitter tip.

Abstract translation: 描述了用于缓和电子发射和限制放气以便抑制场发射器件的电子束劣化的结构和方法。 在一种简化这种电子发射的方法中，在场致发射极尖端的表面下形成一层低相对介电常数材料。 另一种方法是用低相对介电常数物质或化合物涂覆场发射器尖端以形成层，然后用场发射器尖端的材料的薄层覆盖该层。

公开(公告)号：US06887774B2

公开(公告)日：2005-05-03

申请号：US10881630

申请日：2004-06-30

Applicant: Yongjun Hu ,  Randhir P.S. Thakur ,  Scott DeBoer

Inventor： Yongjun Hu ,  Randhir P.S. Thakur ,  Scott DeBoer

IPC: H01L21/28 ,  H01L21/8242 ,  H01L29/49 ,  H01L21/3205 ,  H01L29/76

CPC classification number: H01L21/28052 ,  H01L21/28061 ,  H01L27/10891 ,  H01L29/4941 ,  Y10S257/914 ,  Y10S257/915

Abstract: Methods and apparatus for forming word line stacks comprise forming a thin nitride layer coupled between a bottom silicon layer and a conductor layer. In a further embodiment, a diffusion barrier layer is coupled between the thin nitride layer and the bottom silicon layer. The thin nitride layer is formed by annealing a silicon oxide film in a nitrogen-containing ambient.

Abstract translation: 用于形成字线堆叠的方法和装置包括形成耦合在底部硅层和导体层之间的薄氮化物层。 在另一个实施例中，扩散阻挡层耦合在薄氮化物层和底部硅层之间。 通过在含氮环境中退火氧化硅膜来形成薄氮化物层。

公开(公告)号：US06627389B1

公开(公告)日：2003-09-30

申请号：US09631264

申请日：2000-08-02

Applicant: Yongjun Hu

Inventor： Yongjun Hu

IPC: G03F700

CPC classification number: H01L21/0276 ,  G03F7/091 ,  H01L21/318 ,  H01L21/32139 ,  H01L27/1462 ,  H01L31/02161 ,  H01L31/02327 ,  Y10S430/151

Abstract: Antireflective structures according to the present invention comprise a metal silicon nitride composition in a layer that is superposed upon a layer to be patterned that would other wise cause destructive reflectivity during photoresist patterning. The antireflective structure has the ability to absorb light used during photoresist patterning. The antireflective structure also has the ability to scatter unabsorbed light into patterns and intensities that are ineffective to photoresist material exposed to the patterns and intensities. One preferred material for the antireflective layer includes metal silicon nitride ternary compounds of the general formula MxSiyNz, where M is at least one transition metal, x is less than y and z is greater than about 0 and less than about 5y.

Abstract translation: 根据本发明的抗反射结构包括层叠的金属氮化硅组合物，该层被叠加在待图案化的层上，这将在光致抗蚀剂图案化期间另外引起破坏性的反射率。 抗反射结构具有吸收光致抗蚀剂图案化期间使用的光的能力。 抗反射结构还具有将未吸收光散射到对暴露于图案和强度的光致抗蚀剂材料无效的图案和强度的能力。 用于抗反射层的一种优选材料包括通式为MxSiyNz的金属氮化硅三元化合物，其中M为至少一种过渡金属，x小于y且z大于约0且小于约5y。

公开(公告)号：US06479381B2

公开(公告)日：2002-11-12

申请号：US09812099

申请日：2001-03-19

Applicant: Yongjun Hu

Inventor： Yongjun Hu

IPC: H01L2144

CPC classification number: H01L21/76856 ,  C23C14/0641 ,  H01L21/28052 ,  H01L21/2855 ,  H01L21/76841 ,  H01L21/76849 ,  H01L21/76864

Abstract: A process is disclosed for manufacturing a film that is a smooth and has large nitride grains of a diffusion barrier material selected from a group consisting of tungsten alloys of Group III and Group IV early transition metals and molybdenum alloys of Group III and Group IV early transition metals. The diffusion barrier material is preferably selected from a group consisting of ScyMz, ZryMz, ZrvScyMz, ZrvNbYMz, ZruScvNbyMz, NbyMz, NbvScyMz, TiyMz, TivScyMz, TivNbyMz, and TivZryMz, where M is one of tungsten and molybdenum. Under the process, a nitride of the diffusion barrier material is deposited by physical vapor deposition in an environment of nitrogen. The nitrogen content of the environment is selected at an operating level wherein primarily the diffusion barrier material is sputtered with between about 4×108 to about 4×1015 nitride nuclei of the diffusion barrier material per cm2 of the diffusion barrier material, where the nitride nucleation of diffusion barrier material is evenly distributed. A grain growth step is then conducted in a nitrogen environment to grow a film of large nitride grain of the diffusion barrier material. Also disclosed is a stack structure suitable for MOS memory circuits incorporating a lightly nitrided refractory metal salicide diffusion barrier with a covering of a nitride of a diffusion barrier material. The stack structure is formed in accordance with the diffusion barrier material nitride film manufacturing process and exhibits high thermal stability, low resistivity, long range agglomeration blocking, and high surface smoothness.

Abstract translation: 公开了一种制造薄膜的方法，该薄膜是平滑的并且具有选自由III族和第IV族早期过渡金属的钨合金和III族和IV族早期转变的钼合金组成的组的扩散阻挡材料的较大氮化物晶粒 金属。 扩散阻挡材料优选选自ScyMz，ZryMz，ZrvScyMz，ZrvNbYMz，ZruScvNbyMz，NbyMz，NbvScyMz，TiyMz，TivScyMz，TivNbyMz和TivZryMz，其中M是钨和钼之一。 在该过程中，通过物理气相沉积在氮气环境中沉积扩散阻挡材料的氮化物。 选择环境的氮含量，其中主要是扩散阻挡材料溅射，每隔膜扩散阻挡材料的扩散阻挡材料的介于约4×10 8至约4×10 15个氮化物核之间，其中扩散阻挡材料的氮化物成核 均匀分布。 然后在氮环境中进行晶粒生长步骤，以生长扩散阻挡材料的大的氮化物晶粒的膜。 还公开了一种适合于MOS存储电路的堆叠结构，该MOS存储器电路结合了具有覆盖扩散阻挡材料的氮化物的轻微氮化的难熔金属硅化物扩散阻挡层。 堆叠结构根据扩散阻挡材料氮化物膜制造工艺形成，并且具有高热稳定性，低电阻率，远距离聚集阻挡和高表面光滑度。

公开(公告)号：US06468905B1

公开(公告)日：2002-10-22

申请号：US09596231

申请日：2000-06-13

Applicant: Yongjun Hu ,  Jigish D. Trivedi

Inventor： Yongjun Hu ,  Jigish D. Trivedi

IPC: H01L2144

CPC classification number: H01L21/76895 ,  H01L21/76889 ,  H01L23/49866 ,  H01L2924/0002 ,  Y10S257/915 ,  Y10T428/12576 ,  H01L2924/00

Abstract: Methods of forming refractory metal silicide components are described. In accordance with one implementation, a refractory metal layer is formed over a substrate. A silicon-containing structure is formed over the refractory metal layer and a silicon diffusion restricting layer is formed over at least some of the silicon-containing structure. The substrate is subsequently annealed at a temperature which is sufficient to cause a reaction between at least some of the refractory metal layer and at least some of the silicon-containing structure to at least partially form a refractory metal silicide component. In accordance with one aspect of the invention, a silicon diffusion restricting layer is formed over or within the refractory metal layer in a step which is common with the forming of the silicon diffusion restricting layer over the silicon-containing structure. In a preferred implementation, the silicon diffusion restricting layers are formed by exposing the substrate to nitridizing conditions which are sufficient to form a nitride-containing layer over the silicon-containing structure, and a refractory metal nitride compound within the refractory metal layer. A preferred refractory metal is titanium.

Abstract translation: 描述形成难熔金属硅化物组分的方法。 根据一个实施方案，在衬底上形成难熔金属层。 在难熔金属层之上形成含硅结构，并且在至少一些含硅结构上形成硅扩散限制层。 随后在足以使至少一些难熔金属层与至少一些含硅结构之间的反应至少部分地形成难熔金属硅化物组分的温度下进行退火。 根据本发明的一个方面，在与含硅结构上形成硅扩散限制层相同的步骤中，在难熔金属层之上或之内形成硅扩散限制层。 在优选的实施方案中，硅扩散限制层是通过将衬底暴露于足以在含硅结构上形成含氮化物层的氮化条件和难熔金属层内的难熔金属氮化物化合物而形成的。 优选的难熔金属是钛。

公开(公告)号：US06444579B1

公开(公告)日：2002-09-03

申请号：US09028876

申请日：1998-02-24

Applicant: Yongjun Hu

Inventor： Yongjun Hu

IPC: H01L2144

CPC classification number: H01L21/28052 ,  Y10S977/869 ,  Y10S977/89

Abstract: Methods and apparatus for forming a conductor layer utilize an implanted matrix to form C54-titanium silicide. Word line stacks formed by the methods of the invention are used in sub-0.25 micron line width applications, interconnects, and silicided source/drain regions, among other applications, and have a lower resistivity and improved thermal stability.

Abstract translation: 用于形成导体层的方法和装置利用注入的基体来形成C54-硅化钛。 通过本发明的方法形成的字线叠层在其他应用中用于0.25微米以下的线宽应用，互连和硅化源/漏区，并具有较低的电阻率和改善的热稳定性。

公开(公告)号：US6127270A

公开(公告)日：2000-10-03

申请号：US910908

申请日：1997-08-13

Applicant: Yongjun Hu ,  Jigish D. Trivedi

Inventor： Yongjun Hu ,  Jigish D. Trivedi

IPC: H01L21/768 ,  H01L23/498 ,  H01L21/44

CPC classification number: H01L21/76895 ,  H01L21/76889 ,  H01L23/49866 ,  H01L2924/0002 ,  Y10S257/915 ,  Y10T428/12576

Abstract: Methods of forming refractory metal silicide components are described. In accordance with one implementation, a refractory metal layer is formed over a substrate. A silicon-containing structure is formed over the refractory metal layer and a silicon diffusion restricting layer is formed over at least some of the silicon-containing structure. The substrate is subsequently annealed at a temperature which is sufficient to cause a reaction between at least some of the refractory metal layer and at least some of the silicon-containing structure to at least partially form a refractory metal silicide component. In accordance with one aspect of the invention, a silicon diffusion restricting layer is formed over or within the refractory metal layer in a step which is common with the forming of the silicon diffusion restricting layer over the silicon-containing structure. In a preferred implementation, the silicon diffusion restricting layers are formed by exposing the substrate to nitridizing conditions which are sufficient to form a nitride-containing layer over the silicon-containing structure, and a refractory metal nitride compound within the refractory metal layer. A preferred refractory metal is titanium.