LIGHT ADJUSTMENT DEVICE
    61.
    发明申请

    公开(公告)号:US20250035294A1

    公开(公告)日:2025-01-30

    申请号:US18911923

    申请日:2024-10-10

    Inventor: Daisuke HAMANO

    Abstract: According to an aspect, a light adjustment device includes: first, second, and third frames and light adjustment panels. The first frame, the second frame, and the third frame have annular shapes and are stacked in a first direction. The first frame includes a first hook that protrudes to the one side in the first direction. The second frame includes a first cutout into which the first hook is hooked, and a second hook that protrudes to the one side in the first direction. The third frame includes a second cutout into which the second hook is hooked. The first hook does not overlap the second hook when viewed in the first direction. One of the light adjustment panels is disposed between the first frame and the second frame, and another of the light adjustment panels is disposed between the second frame and the third frame.

    Liquid crystal display device having a liquid crystal light valve

    公开(公告)号:US12210248B2

    公开(公告)日:2025-01-28

    申请号:US17708166

    申请日:2022-03-30

    Abstract: The purpose of the present invention is to realize a high contrast display with liquid crystal display device using a liquid crystal light valve. A representative structure is as follows. A liquid crystal display device includes a liquid crystal display panel, a backlight, and a liquid crystal light valve; the light valve includes a plurality of first electrodes extending in a first direction and formed on the first substrate; a first insulating film is formed on the first electrode; a plurality of second electrodes are formed in a matrix at predetermined intervals on the first insulating film; a second insulating film is formed on the second electrodes; a plurality of third electrodes extending in a second direction are formed on the second insulating film; the liquid crystal is sandwiched between the third electrodes and the second substrate; the predetermined interval between the second electrodes is 2 to 10 μm.

    MOTHERBOARD FOR DISPLAY DEVICE AND METHOD OF MANUFACTURING DISPLAY DEVICE

    公开(公告)号:US20250031548A1

    公开(公告)日:2025-01-23

    申请号:US18773746

    申请日:2024-07-16

    Inventor: Hiroshi TABATAKE

    Abstract: According to one embodiment, a motherboard includes inspection pads for adjacent short-circuiting inspection. The motherboard includes a first high-resistance wiring line connecting the inspection pads to each other, a first cut line set to cut out a plurality of display devices from the motherboard, and a second cut line set along an outline shape of each single display device. The inspection pads are each located between the first cut line and the second cut line. The first high-resistance wiring line is disposed across the first cut line and cut along the first cut line before the inspection using the inspection pads. The inspection pads are not connected to each other by the first high-resistance wiring line at the time of the inspection.

    DISPLAY DEVICE
    64.
    发明申请

    公开(公告)号:US20250029573A1

    公开(公告)日:2025-01-23

    申请号:US18771601

    申请日:2024-07-12

    Abstract: A display device includes a substrate having a display region in which a plurality of pixels are arrayed in a first direction and a second direction different from the first direction, a plurality of scanning lines coupled to the pixels arrayed in the first direction, a plurality of signal lines coupled to the pixels arrayed in the second direction, a gate driver configured to supply a scanning signal to the scanning lines in a selection period of the scanning lines, a signal line selection circuit configured to supply a pixel signal to the signal lines in a selection period of the signal lines, and a driver IC.

    DISPLAY DEVICE
    65.
    发明申请

    公开(公告)号:US20250029552A1

    公开(公告)日:2025-01-23

    申请号:US18905375

    申请日:2024-10-03

    Abstract: According to one embodiment, a display device includes first wiring layers, a second wiring layer, a first insulating layer, first mounting electrodes, a second mounting electrode, a first light emitting element and a second light emitting element. The second mounting electrode is arranged to surround a first mounting electrode and an other first mounting electrode. The first light emitting element is mounted across the first mounting electrode and the second mounting electrode. The second light emitting element is mounted across the other first mounting electrode and the second mounting electrode. The second mounting electrode is electrically connected to the second wiring layer through a second opening of the first insulating layer, in a non-display area.

    DETECTION DEVICE
    66.
    发明申请

    公开(公告)号:US20250028370A1

    公开(公告)日:2025-01-23

    申请号:US18907714

    申请日:2024-10-07

    Abstract: According to an aspect, a detection device includes: a ring-shaped housing; a light source provided in the housing; a first optical sensor provided in the housing so as to be adjacent to one end of the light source in a circumferential direction of the housing; and a second optical sensor provided in the housing so as to be adjacent to the other end of the light source in the circumferential direction of the housing. At least the first optical sensor is an organic photodiode including a sensor substrate, a lower electrode, a lower buffer layer, an active layer, an upper buffer layer, and an upper electrode.

    DETECTION DEVICE
    67.
    发明申请

    公开(公告)号:US20250028357A1

    公开(公告)日:2025-01-23

    申请号:US18905307

    申请日:2024-10-03

    Inventor: Atsunori OYAMA

    Abstract: According to an aspect, a detection device includes: an annular housing; a first flexible substrate provided along a shape of the annular housing; a battery provided on the first flexible substrate; a light source provided on the first flexible substrate; and an optical sensor including a second flexible substrate and a plurality of photodiodes provided in a detection area of the second flexible substrate. One end of the second flexible substrate of the optical sensor overlaps one end of the first flexible substrate, and the second flexible substrate is electrically coupled to the first flexible substrate.

    Display device with relay conductive layer connecting metal layer and common electrode

    公开(公告)号:US12204216B2

    公开(公告)日:2025-01-21

    申请号:US18485315

    申请日:2023-10-12

    Abstract: According to one embodiment, a display device includes a display area, a peripheral area, a pixel electrode disposed, a switching element, a scanning line, a signal line, a metal layer which overlaps at least one of the signal line and the scanning line, an antireflection layer which covers the metal layer, a common electrode which covers the antireflection layer and a power supply line disposed in the peripheral area, to which a common voltage is supplied. The common electrode and the metal layer are connected to the power supply line in the peripheral area.

    LIGHT DETECTION DEVICE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20250024695A1

    公开(公告)日:2025-01-16

    申请号:US18753064

    申请日:2024-06-25

    Abstract: A light detection device includes two adjacent pixels that each include a light receiving element including a lower electrode, an organic light receiving part laminated on the lower electrode, and an upper electrode laminated on the organic light receiving part, and a wall portion that is provided between the two pixels and extends from below an upper surface of the upper electrode included in the light receiving element to above the upper surface of the upper electrode included in the light receiving element.

    SEMICONDUCTOR DEVICE
    70.
    发明申请

    公开(公告)号:US20250022966A1

    公开(公告)日:2025-01-16

    申请号:US18898831

    申请日:2024-09-27

    Abstract: A semiconductor device includes a metal oxide layer over an insulating surface and an oxide semiconductor layer over the metal oxide layer. A fluorine concentration of the metal oxide semiconductor layer is greater than or equal to 1×1018 atoms/cm3. In a SIMS analysis, a secondary ion intensity of fluorine detected in the metal oxide layer may be greater than or equal to 10 times a secondary ion intensity of fluorine detected in the oxide semiconductor layer.

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