Abstract:
In a touch sensing display device, a plurality of sensor scanning lines extend in a first direction and sequentially receive a first voltage, and a plurality of sensor data lines extend in a second, different, direction. A plurality of sensing elements are formed in regions defined by the sensor scanning lines and the sensor data lines, and each sensing element transmits the first voltage from a corresponding sensor scanning line to a corresponding sensor data line responsive to an external touch. A sensing signal processor converts voltages of the sensor data lines into sensing data, and, a touch determining unit processes the sensing data corresponding to the sensor scanning lines by at least one scanning line to determine positions of touch regions generated during at least one frame.
Abstract:
A display device includes: a display panel which comprises sub-pixels including an R sub-pixel, a G sub-pixel, a B sub-pixel and a W sub-pixel and disposed in a matrix form, a gate line and a data line which insulatingly cross each other and transmit a driving signal to the sub-pixels; a driver connected to the gate line and the data line; and a signal controller which comprises a signal converter including a W extracting unit to convert R, G and B image signals into R, G, B and W image signals and a rendering unit to render the R, G, B and W image signals so that eight sub-pixels adjacent in an extending direction of the gate line display three pixels, and controls the driver to apply rendered image signals to the display panel.
Abstract:
Disclosed is a semiconductor device having an align key and a method of fabricating the same. The semiconductor device includes a semiconductor substrate having a cell area and an align key area. An isolation layer that defines a cell active area is disposed in the cell area of the semiconductor substrate. A cell charge storage layer pattern is disposed across the cell active area. An align charge storage layer pattern is disposed in the align key area of the semiconductor substrate. An align trench self-aligned with the align charge storage layer pattern is formed in the align key area of the semiconductor substrate.
Abstract:
A mask for estimating aberration in a projection lens system of an exposure apparatus. The mask includes a mask substrate and mask patterns arranged on the mask substrate such that a critical dimension (CD), represented by the width of each of the mask patterns, and a phase of the mask patterns have a size proportional to a SINC function. Preferably the distance between the centers of the mask patterns is substantially uniform. The size and phase of light transmitted to the projection lens system during an exposure step are substantially uniform such that the aberration value in each portion of the projection lens system depending on each of the mask patterns is substantially not distorted and is substantially uniform.