公开(公告)号：USD433476S

公开(公告)日：2000-11-07

申请号：US108590

申请日：1999-08-02

Applicant: Tony Lin

Designer： Tony Lin

公开(公告)号：US6069061A

公开(公告)日：2000-05-30

申请号：US245648

申请日：1999-02-08

Applicant: Tony Lin ,  Water Lur

Inventor： Tony Lin ,  Water Lur

IPC: H01L21/28 ,  H01L21/336 ,  H01L29/49

CPC classification number: H01L29/4933 ,  H01L21/28052 ,  H01L29/6659

Abstract: A method is provided for forming a polysilicon gate. A stacked gate with a first polysilicon layer/an oxide layer/a second polysilicon layer multiple structure is formed. The invention provides another method for forming a polysilicon gate, in which a first polysilicon layer is formed and waits for a period of time. Then, a second polysilicon layer is formed on the first polysilicon layer. A grain boundary is formed between the first polysilicon layer and the second polysilicon layer. The invention provides still another method for forming a polysilicon gate, in which a polysilicon layer is formed at the temperature of about 600-700.degree. C. and the pressure of about 1-5 torr to form a small-grained polysilicon layer. The three methods for forming a polysilicon gate can prevent the heavy ions from passing through the polysilicon gate and the gate oxide layer into the substrate while performing a pre-amorphization implant process. The absence of these heavy ions in the substrate avoids the subthreshold kink side-effect.

Abstract translation: 提供了形成多晶硅栅极的方法。 形成具有第一多晶硅层/氧化物层/第二多晶硅层多重结构的堆叠栅极。 本发明提供了形成多晶硅栅极的另一种方法，其中形成第一多晶硅层并等待一段时间。 然后，在第一多晶硅层上形成第二多晶硅层。 在第一多晶硅层和第二多晶硅层之间形成晶界。 本发明提供另一种形成多晶硅栅极的方法，其中在约600-700℃的温度和约1-5托的压力下形成多晶硅层以形成小粒度多晶硅层。 用于形成多晶硅栅极的三种方法可以防止重离子在进行预非晶化注入工艺时通过多晶硅栅极和栅极氧化物层进入衬底。 衬底中没有这些重离子避免了亚阈值扭结副作用。

公开(公告)号：US6057208A

公开(公告)日：2000-05-02

申请号：US057905

申请日：1998-04-09

Applicant: Tony Lin ,  Heng-Sheng Huang

Inventor： Tony Lin ,  Heng-Sheng Huang

IPC: H01L21/762 ,  H01L21/76

CPC classification number: H01L21/76224

Abstract: A method of forming a shallow trench isolation structure is disclosed. A dielectric layer deposited by chemical vapor deposition is used as a sacrificial layer instead of conventional sacrificial oxide layer formed by thermal oxidation. Therefore, the oxide in the trench is further protected and less damaged.

Abstract translation: 公开了形成浅沟槽隔离结构的方法。 通过化学气相沉积沉积的电介质层用作牺牲层，而不是通过热氧化形成的常规牺牲氧化物层。 因此，沟槽中的氧化物被进一步保护并且损坏较少。

公开(公告)号：US6022785A

公开(公告)日：2000-02-08

申请号：US126462

申请日：1998-07-30

Applicant: Wen-Kuan Yeh ,  Tony Lin

Inventor： Wen-Kuan Yeh ,  Tony Lin

IPC: H01L21/336 ,  H01L29/10 ,  H01L21/425

CPC classification number: H01L29/6659 ,  H01L29/1083

Abstract: The invention discloses a method of forming a metal-oxide-semiconductor transistor. The method provides a substrate, where a gate structure is formed thereon. Next, a first spacer is formed on the sidewall of the gate structure. A pair of heavily doped regions is formed in the substrate. Then, an annealing process is performed to make the doped ions in the heavily doped regions uniformly distributed. Next, the first spacer is removed and a thin pad dielectric layer is formed over the substrate. Next, a first type halo structure is formed in the bottom portion of the source/drain region beneath the gate structure. A lightly doped region is formed between the gate structure and the first type halo structure and above the first type halo structure. An etching process is performed on the pad dielectric layer to form a second spacer and then the MOS transitor is completed.

Abstract translation: 本发明公开了一种形成金属氧化物半导体晶体管的方法。 该方法提供了其上形成栅极结构的衬底。 接下来，在栅极结构的侧壁上形成第一间隔物。 在衬底中形成一对重掺杂区域。 然后，进行退火处理以使重掺杂区域中的掺杂离子均匀分布。 接下来，去除第一间隔物，并在衬底上形成薄的衬垫介电层。 接下来，在栅极结构下面的源极/漏极区域的底部形成第一类型的晕结构。 在栅极结构和第一类型卤素结构之间并且在第一类型的晕结构之上形成轻掺杂区。 在焊盘电介质层上进行蚀刻处理以形成第二间隔物，然后完成MOS过渡电极。

公开(公告)号：USD406938S

公开(公告)日：1999-03-23

申请号：US88659

申请日：1998-05-29

Applicant: Tony Lin

Designer： Tony Lin

公开(公告)号：US5874353A

公开(公告)日：1999-02-23

申请号：US927321

申请日：1997-09-11

Applicant: Tony Lin ,  Water Lur ,  Shih-Wei Sun

Inventor： Tony Lin ,  Water Lur ,  Shih-Wei Sun

IPC: H01L21/28 ,  H01L21/336 ,  H01L29/49 ,  H01L21/3205 ,  H01L21/4763

CPC classification number: H01L29/665 ,  H01L21/28052 ,  H01L21/28061 ,  H01L29/4925 ,  H01L29/4941

Abstract: A method of forming self-aligned silicide devices which includes providing a silicon substrate having shallow trench isolation regions for defining a device area formed therein; then, forming sequentially a gate oxide layer, a polysilicon layer, a first titanium nitride layer, a titanium silicide layer, a second titanium nitride layer and a silicon nitride layer over the substrate. After a gate electrode is etched out from the above layers, a titanium layer is deposited over the device, and then a self-aligned titanium silicide layer is formed using a heating process. The use of a titanium silicide layer having protective top and bottom titanium nitride layers, compared with a single tungsten silicide layer in a conventional method, provides for a self-aligned silicide device having a rather low gate resistance; being free from narrow width effect of a titanium self-aligned silicide layer; is applicable to self-aligned contact window processes, and avoids the cross-diffusion of doped ions in the polysilicon layer of a dual gate electrode having a tungsten polycide layer.

Abstract translation: 一种形成自对准硅化物器件的方法，其包括提供具有浅沟槽隔离区域的硅衬底，用于限定其中形成的器件区域; 然后在衬底上依次形成栅氧化层，多晶硅层，第一氮化钛层，硅化钛层，第二氮化钛层和氮化硅层。 在从上述层蚀刻出栅电极之后，在器件上沉积钛层，然后使用加热工艺形成自对准硅化钛层。 与常规方法中的单个硅化钨层相比，使用具有保护性顶部和底部氮化钛层的硅化钛层提供具有相当低的栅极电阻的自对准硅化物器件; 没有钛自对准硅化物层的窄宽度效应; 适用于自对准接触窗工艺，并避免掺杂离子在具有钨多硅化物层的双栅电极的多晶硅层中的交叉扩散。

公开(公告)号：US20160365749A1

公开(公告)日：2016-12-15

申请号：US15180836

申请日：2016-06-13

Applicant: Tony Lin

Inventor： Tony Lin

IPC: H02J7/14 ,  H02J7/00

CPC classification number: H02J7/14 ,  H02J7/0045 ,  H02J2007/0062

Abstract: A charger is disclosed that is configured with a low profile so as to fit into a charging port of a device that may be in a case or protective housing.

Abstract translation: 公开了一种充电器，其被配置为具有低轮廓以便装配到可以在壳体或保护壳体中的装置的充电端口中。

公开(公告)号：US20130253995A1

公开(公告)日：2013-09-26

申请号：US13827524

申请日：2013-03-14

Applicant: Tony LIN

Inventor： Tony LIN

IPC: G07C13/00

CPC classification number: G07C13/00

Abstract: A method for rewarding participants of a voting event is to be performed by a computing device, and includes: hosting the voting event for participation by the participants; presenting description information of candidates of the voting event; receiving inputs to vote from the participants, each of the inputs to vote corresponding independently to one of the candidates; selecting a winning candidate according to numbers of inputs to vote corresponding to the candidates; and providing a reward to the participants from which the inputs to vote corresponding to the winning candidate were received, the reward including beneficial information associated with the winning candidate.

Abstract translation: 投票事件的参与者的奖励方法由计算装置执行，包括：主持参与者参与的投票事件; 呈现投票事件的候选人的描述信息; 接受参与者的投票，每个投票与其中一名候选人独立投票; 根据候选人的投票数来选择获胜候选人; 并向接收到对应于获胜候选人的投票的参与者提供奖励，奖励包括与获胜候选人相关联的有益信息。

公开(公告)号：USD660051S1

公开(公告)日：2012-05-22

申请号：US29394987

申请日：2011-06-23

Applicant: Tony Lin

Designer： Tony Lin

公开(公告)号：US20110080709A1

公开(公告)日：2011-04-07

申请号：US12652038

申请日：2010-01-05

Applicant: Tony Lin

Inventor： Tony Lin

IPC: H05K7/20

CPC classification number: H05K7/20972

Abstract: A digital signage player is provided. The digital signage player includes a body having a main board and a hard disk, an outer frame in which the body is framed, and a heat dissipation unit disposed in the body. The digital signage player of the present invention can be conveniently fixed to a wall surface nearby the digital signage by fixing a fixing mechanism of the outer frame with screw bolts or rivets to the wall surface. Further, the corrugation shaped heat dissipation fins are also configured to prevent dusts or dirts from entering the body and contaminating the main board.

Abstract translation: 提供数字标牌播放器。 数字标牌播放器包括具有主板和硬盘的主体，主体被框架的外框架和布置在主体中的散热单元。 通过将外框架的固定机构用螺栓或铆钉固定到墙壁表面上，本发明的数字标牌玩家可以方便地固定在数字标牌附近的墙壁表面上。 此外，波纹状散热片也被构造成防止灰尘或污物进入身体并污染主板。