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61.发明授权Use of supercritical fluid to dry wafer and clean lens in immersion lithography 有权在浸没光刻中使用超临界流体干燥晶片并清洁透镜公开(公告)号：US07262422B2
公开(公告)日：2007-08-28
申请号：US11173257
申请日：2005-07-01
IPC分类号： G03C5/00
CPC分类号： G03F7/70341 , G03F7/70916 , G03F7/70925
摘要： Disclosed are immersion lithography methods and systems involving irradiating a photoresist through a lens and an immersion liquid of an immersion lithography tool, the immersion liquid in an immersion space contacting the lens and the photoresist; removing the immersion liquid from the immersion space; charging the immersion space with a supercritical fluid; removing the supercritical fluid from the immersion space; and charging the immersion space with immersion liquid.
摘要翻译： 公开了浸没式光刻方法和系统，其涉及通过透镜和浸没式光刻工具的浸没液体照射光致抗蚀剂，该浸没液体在与透镜接触的浸没空间和光致抗蚀剂中; 从浸没空间中去除浸没液体; 用超临界流体填充浸没空间; 从浸没空间中去除超临界流体; 并用浸没液充入浸没空间。
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公开(公告)号：US07156925B1
公开(公告)日：2007-01-02
申请号：US10978844
申请日：2004-11-01
IPC分类号： G03B27/42
CPC分类号： G03F7/2041 , G03F7/70341 , G03F7/70925
摘要： Disclosed are immersion lithography methods involving irradiating a first photoresist through a lens and an immersion liquid, the immersion liquid contacting the lens and the first photoresist in a first apparatus; contacting the lens with a supercritical fluid in a second apparatus; and irradiating a second photoresist through the lens and an immersion liquid, the immersion liquid contacting the lens and the second photoresist in the first apparatus.
摘要翻译： 公开了浸没式光刻方法，包括通过透镜和浸没液体照射第一光致抗蚀剂，浸没液体在第一装置中与透镜和第一光致抗蚀剂接触; 在第二装置中使透镜与超临界流体接触; 以及通过所述透镜和浸没液体照射第二光致抗蚀剂，所述浸没液体与所述透镜和所述第二光致抗蚀剂接触。
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63.发明授权Feedback control of imprint mask feature profile using scatterometry and spacer etchback 有权使用散射法和间隔蚀刻蚀刻对印迹掩模特征轮廓的反馈控制公开(公告)号：US07449348B1
公开(公告)日：2008-11-11
申请号：US10858605
申请日：2004-06-02
IPC分类号： H01L21/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , H01L22/12
摘要： The present invention relates generally to photolithographic systems and methods, and more particularly to systems and methodologies that facilitate compensating for retrograde feature profiles on an imprint mask. An aspect of the invention generates feedback information that facilitates control of imprint mask feature profile via employing a scatterometry system to detect retrograde feature profiles, and mitigating the retrograde profiles via a spacer etchback procedure.
摘要翻译： 本发明一般涉及光刻系统和方法，更具体地涉及有助于补偿压印掩模上逆行特征轮廓的系统和方法。 本发明的一个方面产生反馈信息，其通过使用散射测量系统来检测逆行特征轮廓，以及通过间隔回蚀程序来缓解逆行轮廓，从而有助于控制压印掩模特征轮廓。
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公开(公告)号：US07109046B1
公开(公告)日：2006-09-19
申请号：US10768514
申请日：2004-01-30
IPC分类号： H01L21/00
CPC分类号： H01L22/12
摘要： The present invention relates generally to semiconductor processing, and more particularly to methods and systems for reducing costs of wafer production by analyzing key aspects of wafer status to determine whether to initiate corrective measures to salvage a wafer at an early stage and before substantial costs are incurred in fabricating a defective wafer. One aspect of the present invention provides for growing an oxide layer on a wafer upon a determination that an oxide layer on the wafer surface is absent or is present but inadequate. Another aspect of the present invention provides for a determination of whether to apply preemptory corrective treatment(s) to a wafer surface based on the presence and/or magnitude of nitrogen signatures in an extant oxide surface layer, which can indicate that an undesirable defect known as “footing” will occur during a post-exposure delay period. Thus, the invention advantageously reduces production costs by facilitating a most correct decision to mitigate the source(s) of potential defects at an early stage and, thus, before substantial costs are incurred in production of the wafer.
摘要翻译： 本发明一般涉及半导体处理，更具体地说，涉及通过分析晶片状态的关键方面来降低晶片生产成本的方法和系统，以确定是否启动在早期阶段挽救晶片的纠正措施以及在大量成本产生之前 在制造缺陷晶片时。 本发明的一个方面提供了在确定晶片表面上的氧化物层不存在或存在但不足的情况下，在晶片上生长氧化物层。 本发明的另一方面提供了根据现有氧化物表面层中氮标记的存在和/或大小来确定是否对晶片表面施加抢占式校正处理，其可以指示不期望的缺陷已知 因为在曝光后延迟期间将发生“立足”。 因此，本发明有利地通过促进最正确的决定来降低生产成本，以在早期阶段减轻潜在缺陷的来源，并且因此在生产晶片之前花费大量成本之前。
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65.发明授权Scatterometry monitor in cluster process tool environment for advanced process control (APC) 有权用于高级过程控制（APC）的集群过程工具环境中的散射测量监视器公开(公告)号：US07076320B1
公开(公告)日：2006-07-11
申请号：US10838827
申请日：2004-05-04
IPC分类号： G06F19/00
CPC分类号： H01L21/67253 , G03F7/70525
摘要： Systems and methods that improve process control in semiconductor manufacturing are disclosed. According to an aspect of the invention, conditions in a cluster tool environment and/or a wafer therein can be monitored in-situ via, for example, a scatterometry system, to determine whether parameters associated with wafer production are within control limits. A cluster tool environment can include, for example, a lithography track, a stepper, a plasma etcher, a cleaning tool, a chemical bath, etc. If an out-of-control condition is detected, either associated with a tool in the cluster tool environment or with the wafer itself, compensatory measures can be taken to correct the out-of-control condition. The invention can further employ feedback/feed-forward loop(s) to facilitate compensatory action in order to improve process control.
摘要翻译： 公开了改进半导体制造过程控制的系统和方法。 根据本发明的一个方面，可以通过例如散射测量系统原地监测集群工具环境和/或其中的晶片中的条件，以确定与晶片生产相关的参数是否处于控制限度内。 集群工具环境可以包括例如光刻轨迹，步进器，等离子体蚀刻器，清洁工具，化学浴等。如果检测到失控状态，则与集群中的工具相关联 工具环境或晶圆本身，可采取补偿措施来纠正失控状态。 本发明可以进一步采用反馈/前馈回路来促进补偿动作，以改善过程控制。
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66.发明授权Non-lithographic shrink techniques for improving line edge roughness and using imperfect (but simpler) BARCs 有权非光刻收缩技术，用于改善线边缘粗糙度并使用不完美（但更简单）的BARC公开(公告)号：US07064846B1
公开(公告)日：2006-06-20
申请号：US10646190
申请日：2003-08-22
IPC分类号： G01B11/04
CPC分类号： G03F7/40
摘要： The present invention relates generally to photolithographic systems and methods, and more particularly to systems and methodologies that facilitate the reduction of line-edge roughness (LER) and/or standing wave expression during pattern line formation in an integrated circuit. Systems and methods are disclosed for retaining a target critical dimension (CD) of photoresist lines, comprising a non-lithographic shrink component that facilitates mitigating LER and/or standing wave expression, wherein the shrink component is employed to heat a particular resist to the glass transition temperature of the resist to effectuate mitigation of LER and/or standing wave expression. Additionally, by heating the resist to its glass transition temperature, the systems and methods of the present invention effectively impede deviation from a desired target critical dimension.
摘要翻译： 本发明一般涉及光刻系统和方法，更具体地涉及有助于在集成电路中的图案线形成期间减少线边缘粗糙度（LER）和/或驻波表达的系统和方法。 公开了用于保持光致抗蚀剂线的目标临界尺寸（CD）的系统和方法，其包括有助于减轻LER和/或驻波表达的非光刻收缩组分，其中采用收缩组分将特定抗蚀剂加热到玻璃 抗蚀剂的转变温度来实现LER和/或驻波表达的缓解。 此外，通过将抗蚀剂加热至其玻璃化转变温度，本发明的系统和方法有效地阻止了偏离所需目标临界尺寸。
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公开(公告)号：US06612319B1
公开(公告)日：2003-09-02
申请号：US09634670
申请日：2000-08-08
IPC分类号： B08B302
CPC分类号： H01L21/6708 , B05B15/52 , B05B15/531 , B05B15/55 , Y10S134/902
摘要： An edge bead removal system and method is provided that employs a nozzle for applying edge bead removal solvent to an edge bead of a photoresist material layer disposed on a wafer. The nozzle includes a liquid chamber that can be connected to a supply of edge bead removal and an air supply chamber that can be connected to a supply of air. The supply of air is isolated from the liquid supply chamber during application of the edge bead removal solvent and communicates via the air supply chamber to the liquid supply chamber after application of the edge bead removal solvent thus removing any droplets of edge bead removal solvent remaining in the nozzle tip. A system is also provided that includes an absorbent material that moves from a rest position, during application of the edge bead removal solvent, to an absorbing position that removes or catches any droplets of edge bead removal solvent remaining on the nozzle tip after application of the edge bead removal solvent is completed. A nozzle is also provided that includes a liquid supply chamber with an inner cylindrical surface that is made of or coated with either a hydrophobic material and/or a hydrophilic material.
摘要翻译： 提供了一种边缘珠去除系统和方法，其采用用于将边缘珠去除溶剂施加到设置在晶片上的光致抗蚀剂材料层的边缘珠的喷嘴。 喷嘴包括可以连接到边缘珠移除的供应的液体室和可以连接到空气供应的空气供应室。 在施加边缘珠去除溶剂期间，空气的供应与液体供应室隔离，并且在施加边缘珠粒去除溶剂之后通过供气室与液体供应室连通，从而除去剩余的边缘珠去除溶剂中的任何液滴 喷嘴尖端。 还提供了一种系统，其包括吸收材料，其在施加边缘珠去除溶剂期间从静止位置移动到吸收位置，该吸收位置在施加之后移除或捕获留在喷嘴尖端上的边缘珠去除溶剂的任何液滴 边缘珠去除溶剂完成。 还提供了一种喷嘴，其包括具有由疏水材料和/或亲水材料制成或涂覆有内部圆柱形表面的液体供应室。
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公开(公告)号：US06533865B1
公开(公告)日：2003-03-18
申请号：US09521034
申请日：2000-03-08
申请人： Khoi A. Phan , Bharath Rangarajan
发明人： Khoi A. Phan , Bharath Rangarajan
IPC分类号： G03D302
CPC分类号： G03D3/02
摘要： The present invention relates to a method of eliminating microbubbles associated with a developer solution. The method includes depositing the developer solution over an exposed photoresist film which overlies a substrate and agitating the developer solution using waves. The agitation of the developer solution causes the microbubbles to exit the developer solution and reduces defects previously associated therewith. In addition, a system for eliminating microbubbles associated with a developer solution is disclosed. The system includes an apparatus for applying the developer solution to a photoresist film which overlies a substrate and a developer agitation system. The developer agitation system is operably coupled to the developer solution and agitates the developer solution using waves, which causes the microbubbles to exit the developer solution.
摘要翻译： 本发明涉及消除与显影剂溶液相关的微泡的方法。 该方法包括将显影剂溶液沉积在覆盖在基底上的暴露的光致抗蚀剂膜上，并使用波浪来搅拌显影剂溶液。 显影剂溶液的搅动导致微泡离开显影剂溶液并减少先前与之相关的缺陷。 此外，公开了一种用于消除与显影剂溶液相关联的微泡的系统。 该系统包括用于将显影剂溶液施加到覆盖在基底和显影剂搅拌系统上的光致抗蚀剂膜的装置。 显影剂搅拌系统可操作地耦合到显影剂溶液并使用波浪搅动显影剂溶液，这导致微泡离开显影剂溶液。
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69.发明授权Use of non-lithographic shrink techniques for fabrication/making of imprints masks 失效使用非光刻收缩技术制造/制作印记掩模公开(公告)号：US07159205B1
公开(公告)日：2007-01-02
申请号：US10838830
申请日：2004-05-04
申请人： Gilles Amblard , Bhanwar Singh , Khoi A. Phan
发明人： Gilles Amblard , Bhanwar Singh , Khoi A. Phan
IPC分类号： G06F17/50
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G03F7/40
摘要： The present invention relates generally to photolithographic systems and methods, and more particularly to systems and methodologies that facilitate improved critical dimension (CD) control and the reduction of line-edge roughness (LER) during pattern line formation in an imprint mask. One aspect of the invention provides for forming features having CDs that are larger than ultimately desired in a mask resist. Upon application of a non-lithographic shrink technique, LER is mitigated and CD is reduced to within a desired target tolerance.
摘要翻译： 本发明一般涉及光刻系统和方法，更具体地涉及在压印掩模中在图案线形成期间促进改进的临界尺寸（CD）控制和减少线边缘粗糙度（LER）的系统和方法。 本发明的一个方面提供了形成具有大于掩模抗蚀剂中最终期望的CD的特征。 在施加非光刻收缩技术时，LER被减轻并且CD被减小到期望的目标公差内。
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70.发明授权System and method for imprint lithography to facilitate dual damascene integration in a single imprint act 有权用于压印光刻的系统和方法，以便于在单一印记法中双重镶嵌一体化公开(公告)号：US07148142B1
公开(公告)日：2006-12-12
申请号：US10874500
申请日：2004-06-23
IPC分类号： H01L21/44
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , H01L21/76807 , H01L21/76817 , H01L2221/1021
摘要： A system and method are provided to facilitate dual damascene interconnect integration in a single imprint step. The method provides for creation of a translucent imprint mold with three-dimensional features comprising the dual damascene pattern to be imprinted. The imprint mold is brought into contact with a photopolymerizable organosilicon imaging layer deposited upon a transfer layer which is spin coated or otherwise deposited upon a dielectric layer of a substrate. When the photopolymerizable layer is exposed to a source of illumination, it cures with a structure matching the dual damascene pattern of the imprint mold. A halogen breakthrough etch followed by oxygen transfer etch transfer the vias from the imaging layer into the transfer layer. A second halogen breakthrough etch followed by a second oxygen transfer etch transfer the trenches from the imaging layer into the transfer layer. A dielectric etch transfers the pattern from the transfer layer into the dielectric layer. A metal fill process then fills the dual damascene openings of the dielectric layer with metal.
摘要翻译： 提供了一种系统和方法，以便在单个压印步骤中促进双镶嵌互连集成。 该方法提供了具有三维特征的半透明压印模具的创建，该三维特征包括要印刷的双镶嵌图案。 压印模具与沉积在转移层上的可光聚合的有机硅成像层接触，转移层被旋涂或以其它方式沉积在基底的电介质层上。 当可光聚合层暴露于照明源时，它可以用匹配印模的双镶嵌图案的结构固化。 卤素穿透蚀刻随后氧传递蚀刻将通孔从成像层转移到转移层中。 第二个卤素穿透蚀刻，随后是第二次氧转移蚀刻，将沟槽从成像层转移到转移层中。 电介质蚀刻将图案从转印层转移到电介质层中。 然后，金属填充过程用金属填充介电层的双镶嵌开口。
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