Projecting type charged particle microscope and projecting type substrate inspection system
    61.
    发明授权
    Projecting type charged particle microscope and projecting type substrate inspection system 有权
    投影式带电粒子显微镜和突出型基片检查系统

    公开(公告)号:US06310341B1

    公开(公告)日:2001-10-30

    申请号:US09253456

    申请日:1999-02-22

    IPC分类号: H01J4944

    CPC分类号: H01J37/28 H01J37/05

    摘要: An irradiation electron beam emitted from an electron gun is deflected by an energy filter, and passes through a first projective lens and an objective lens, and then irradiated onto a sample to produce secondary electrons. The secondary electron beam accelerated by a negative voltage applied to the sample passes through the objective lens and the first projective lens, and deflected by the energy filter to be energy dispersed. Only the secondary electrons having a specified energy pass through energy selecting aperture, and further pass through a second projective lens to form a projected image of the secondary electrons on an imager. Such an electron-optical system may be used for dimension evaluation or inspection of semiconductor substrates.

    摘要翻译: 从电子枪发射的照射电子束被能量过滤器偏转,并通过第一投射透镜和物镜,然后照射到样品上以产生二次电子。 施加到样品的负电压加速的二次电子束通过物镜和第一投射透镜,并被能量过滤器偏转以进行能量分散。 只有具有指定能量的二次电子通过能量选择孔,并且进一步通过第二投影透镜以在成像器上形成二次电子的投影图像。 这样的电子 - 光学系统可以用于半导体衬底的尺寸评估或检查。