公开(公告)号：US20240339287A1

公开(公告)日：2024-10-10

申请号：US18131271

申请日：2023-04-05

Applicant: Applied Materials, Inc.

Inventor： Alexandre Likhanskii ,  Nirbhav Singh Chopra ,  Peter F. Kurunczi ,  Anthony Renau ,  Joseph C. Olson ,  Frank Sinclair

IPC: H01J37/05 ,  H01J37/147 ,  H01J37/317

CPC classification number: H01J37/05 ,  H01J37/1472 ,  H01J37/3171 ,  H01J37/12 ,  H01J2237/053 ,  H01J2237/057 ,  H01J2237/1207 ,  H01J2237/2505

Abstract: An apparatus may include an electrodynamic mass analysis (EDMA) assembly disposed downstream from the convergent ion beam assembly. The EDMA assembly may include a first stage, comprising a first upper electrode, disposed above a beam axis, and a first lower electrode, disposed below the beam axis, opposite the first upper electrode. The EDMA assembly may also include a second stage, disposed downstream of the first stage and comprising a second upper electrode, disposed above the beam axis, and a second lower electrode, disposed below the beam axis. The EDMA assembly may further include a deflection assembly, disposed between the first stage and the second stage, the deflection assembly comprising a blocker, disposed along the beam axis, an upper deflection electrode, disposed on a first side of the blocker, and a lower deflection electrode, disposed on a second side of the blocker.

公开(公告)号：US12080510B2

公开(公告)日：2024-09-03

申请号：US18378421

申请日：2023-10-10

Applicant: mi2-factory GmbH

Inventor： Florian Krippendorf ,  Constantin Csato

IPC: H01J37/05 ,  H01J37/147 ,  H01J37/317

CPC classification number: H01J37/05 ,  H01J37/1472 ,  H01J37/317 ,  H01J37/3171 ,  H01J37/3172 ,  H01J2237/002 ,  H01J2237/047 ,  H01J2237/057 ,  H01J2237/31705 ,  H01J2237/3171

Abstract: A method of monitoring compliance with filter specification during the implantation of ions into a substrate reading a signature of the filter and comparing the read signature with filter signatures stored in a database to identify properties of the filter including at least one of a maximum allowable temperature of the filter and a maximum allowable accumulated ion dose of the filter. The temperature and/or the accumulated ion dose of the filter is measured while ions are implanted into the substrate by an ion beam passing through the filter. The implantation is terminated when the measured temperature or accumulated ion dose of the filter reaches or exceeds the maximum allowable threshold.

公开(公告)号：US20240087835A1

公开(公告)日：2024-03-14

申请号：US18517642

申请日：2023-11-22

Applicant: ASML Netherlands B.V.

Inventor： Albertus Victor Gerardus MANGNUS

IPC: H01J37/05 ,  H01J37/12 ,  H01J37/21

CPC classification number: H01J37/05 ,  H01J37/12 ,  H01J37/21 ,  H01J2237/036 ,  H01J2237/04756 ,  H01J2237/151 ,  H01J2237/216

Abstract: The present disclosure provides a charged particle optical device for a charged particle system. The device projects an array of charged particle beams towards a sample. The device comprises a control lens array to control a parameter of the array of beams; and an objective lens array to project the array of beams onto the sample, the objective lens array being down beam of the control lens. The objective lens array comprises: an upper electrode; and a lower electrode arrangement that comprises an up-beam electrode and a down-beam electrode. The device is configured to apply an upper potential to the upper electrode, an up-beam potential to the up-beam electrode and a down-beam potential to the down-beam electrode. The potentials are controlled to control the landing energy of the beams on the sample and. to maintain focus of the beams on the sample at the landing energies.

公开(公告)号：US20240038487A1

公开(公告)日：2024-02-01

申请号：US17956276

申请日：2022-09-29

Applicant: DAEGU GYEONGBUK INSTITUTE OF SCIENCE & TECHNOLOGY ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Jiwoong YANG ,  Jungwon PARK ,  Hyeonjong MA

IPC: H01J37/26 ,  H01J37/05 ,  H01J37/20

CPC classification number: H01J37/261 ,  H01J37/05 ,  H01J37/20

Abstract: Provided is a liquid cell for an electron microscope according to an embodiment of the inventive concept, including a lower widow layer, an upper widow layer above the lower widow layer, and a separation film disposed between the upper widow layer and the lower widow layer so as to separate the upper widow layer and the lower widow layer from each other. An upper space may be defined by the upper widow layer and the separation film, and a lower space may be defined by the lower widow layer and the separation film. The upper widow layer, the lower widow layer, and the separation film may include the same material.

公开(公告)号：US11810751B2

公开(公告)日：2023-11-07

申请号：US17354986

申请日：2021-06-22

Applicant: FEI Company

Inventor： Peter Tiemeijer ,  Evgeniia Pechnikova ,  Rudolf Geurink ,  Abhay Kotecha ,  Jamie McCormack

IPC: H01J37/22 ,  H01J37/05 ,  H01J37/244 ,  H01J37/26

CPC classification number: H01J37/222 ,  H01J37/05 ,  H01J37/244 ,  H01J37/26 ,  H01J2237/221 ,  H01J2237/226

Abstract: The disclosure relates to a method of imaging a specimen using a transmission charged particle microscope, said method comprising providing a specimen, and providing a charged particle beam and directing said charged particle beam onto said specimen for generating a flux of charged particles transmitted through the specimen. The method comprises the step of generating and recording a first energy filtered flux of charged particles transmitted through the specimen, wherein said first energy filtered flux of charged particles substantially consists of non-scattered and elastically scattered charged particles. The method as disclosed herein comprises the further step of generating and recording a second energy filtered flux of charged particles transmitted through the specimen, wherein said second energy filtered flux of charged particles substantially consists of inelastically scattered charged particles. Said first and second recorded energy filtered flux are then used for imaging said specimen with increased contrast.

公开(公告)号：US20230197398A1

公开(公告)日：2023-06-22

申请号：US17925348

申请日：2021-05-14

Applicant: mi2-factory GmbH

Inventor： Florian KRIPPENDORF ,  Constantin CSATO

IPC: H01J37/05 ,  H01J37/317

CPC classification number: H01J37/05 ,  H01J37/3171 ,  H01J2237/002 ,  H05B3/141

Abstract: An ion implantation device (20) is provided comprising an energy filter (25) with a structured membrane, wherein the energy filter (25) is heated by absorbed energy from the ion beam, and at least one additional heating element (50a-d, 55a-d, 60, 70) for heating the energy filter (25).

公开(公告)号：US20230170177A1

公开(公告)日：2023-06-01

申请号：US17922093

申请日：2021-04-27

Applicant: FRIEDRICH-ALEXANDER-UNIVERSITÄT ERLANGEN-NÜRNBERG

Inventor： Robert ZIMMERMANN ,  Michael SEIDLING ,  Peter HOMMELHOFF

IPC: H01J37/147 ,  H01J37/05

CPC classification number: H01J37/1472 ,  H01J37/05 ,  H01J2237/1516 ,  H01J2237/26 ,  H01J2237/057

Abstract: An electrode structure for guiding and, for example, for splitting a beam of charged particles, for example an electron beam, along a longitudinal path has multipole electrode arrangements that are spaced apart from one another along the longitudinal path and that have DC voltage electrodes. The electrode arrangements are configured to generate static multipole fields centered around the path in transverse planes oriented perpendicular to the longitudinal path, wherein the field strengths of the static multipole fields in the transverse planes each have a local minimum at the location of the path and increase as the distance from the location of the path increases. Field directions of the static multipole fields vary periodically with a period length along the path so that the particles propagating along the path are subjected to an inhomogeneous alternating electric field due to their intrinsic movement and experience a transverse return force towards the longitudinal path on average over time.

公开(公告)号：US11646175B2

公开(公告)日：2023-05-09

申请号：US16791308

申请日：2020-02-14

Applicant: Axcelis Technologies, Inc.

Inventor： James DeLuca ,  Andy Ray ,  Neil Demario ,  Rosario Mollica

IPC: H01J37/317 ,  H01J37/05 ,  H01J37/304 ,  H01J37/244 ,  H01J37/24 ,  H01J37/32

CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J37/243 ,  H01J37/244 ,  H01J37/304 ,  H01J37/32357 ,  H01J2237/24535 ,  H01J2237/31701

Abstract: An ion implantation has an ion source and a mass analyzer configured to form and mass analyze an ion beam. A bending element is positioned downstream of the mass analyzer, and respective first and second measurement apparatuses are positioned downstream and upstream of the bending element and configured to determine a respective first and second ion beam current of the ion beam. A workpiece scanning apparatus scans the workpiece through the ion beam. A controller is configured to determine an implant current of the ion beam at the workpiece and to control the workpiece scanning apparatus to control a scan velocity of the workpiece based on the implant current. The determination of the implant current of the ion beam is based, at least in part, on the first ion beam current and second ion beam current.

公开(公告)号：US20190214219A1

公开(公告)日：2019-07-11

申请号：US16299198

申请日：2019-03-12

Applicant: Infineon Technologies AG

Inventor： Roland Rupp ,  Andre Brockmeier

IPC: H01J37/05 ,  H01J37/317

CPC classification number: H01J37/05 ,  H01J37/3171 ,  H01J2237/057 ,  H01J2237/31701

Abstract: A method of producing an implantation ion energy filter, suitable for processing a power semiconductor device. In one example, the method includes creating a preform having a first structure; providing an energy filter body material; and structuring the energy filter body material by using the preform, thereby establishing an energy filter body having a second structure.

公开(公告)号：US20190108972A1

公开(公告)日：2019-04-11

申请号：US16152439

申请日：2018-10-05

Applicant: Axcelis Technologies, Inc.

Inventor： Teng-Chao David Tao ,  David Allen Kirkwood

IPC: H01J37/305 ,  H01J37/317 ,  H01J37/05

CPC classification number: H01J37/3053 ,  H01J37/05 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/022 ,  H01J2237/057 ,  H01J2237/31701

Abstract: An ion implantation system has an ion source configured form an ion beam and an angular energy filter (AEF) having an AEF region. A gas source passivates and/or etches a film residing on the AEF by a reaction of the film with a gas. The gas can be an oxidizing gas or a fluorine-containing gas. The gas source can selectively supply the gas to the AEF region concurrent with a formation of the ion beam. The AEF is heated to assist in the passivation and/or etching of the film by the gas. The heat can originate from the ion beam, and/or from an auxiliary heater associated with the AEF. A manifold distributor can be operably coupled to the gas source and configured to supply the gas to one or more AEF electrodes.