公开(公告)号：US20100103562A1

公开(公告)日：2010-04-29

申请号：US12289401

申请日：2008-10-27

申请人： Takahiko Machita ,  Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Shinji Hara ,  Koji Shimazawa

发明人： Takahiko Machita ,  Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Shinji Hara ,  Koji Shimazawa

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3912 ,  G11B2005/3996

摘要： A magnetoresistive element includes a pair of shield portions, and an MR stack and a bias magnetic field applying layer that are disposed between the pair of shield portions. The shield portions respectively include single magnetic domain portions. The MR stack includes a pair of ferromagnetic layers magnetically coupled to the pair of single magnetic domain portions, and a spacer layer disposed between the pair of ferromagnetic layers. The MR stack has a front end face, a rear end face and two side surfaces. The magnetoresistive element further includes two flux guide layers disposed between the pair of single magnetic domain portions and respectively adjacent to the two side surfaces of the MR stack. Each of the two flux guide layers has a front end face and a rear end face. The bias magnetic field applying layer has a front end face that faces the rear end face of the MR stack and the respective rear end faces of the two flux guide layers.

摘要翻译： 磁阻元件包括一对屏蔽部分，以及设置在该对屏蔽部分之间的MR堆叠和偏置磁场施加层。 屏蔽部分别包括单个磁畴部分。 MR堆叠包括磁耦合到该对单个磁畴部分的一对铁磁层，以及设置在该对铁磁层之间的间隔层。 MR堆叠具有前端面，后端面和两个侧面。 磁阻元件还包括设置在一对单磁畴部分之间并且分别邻近MR堆叠的两个侧表面的两个磁通引导层。 两个磁通导向层中的每一个具有前端面和后端面。 偏置磁场施加层具有面向MR堆叠的后端面的前端面和两个导流层的各个后端面。

公开(公告)号：US20090190268A1

公开(公告)日：2009-07-30

申请号：US12019205

申请日：2008-01-24

申请人： Takahiko Machita ,  Koji Shimazawa ,  Daisuke Miyauchi ,  Tsutomu Chou

发明人： Takahiko Machita ,  Koji Shimazawa ,  Daisuke Miyauchi ,  Tsutomu Chou

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3932 ,  G11B2005/3996

摘要： A magnetoresistive device of a CPP (current perpendicular to plane) structure includes a magnetoresistive unit sandwiched between a first substantially soft magnetic shield layer from below, and a second substantially soft magnetic shield layer from above, with a sense current applied in a stacking direction. The magnetoresistive unit includes a non-magnetic intermediate layer sandwiched between a first ferromagnetic layer, and a second ferromagnetic layer. At least one of the first and second shield layers is configured in a window frame of a planar shape, including a front frame-constituting portion and a back frame-constituting portion partially comprising a combination of a nonmagnetic gap layer with a bias magnetic field-applying layer. The combination of the nonmagnetic gap layer with the bias magnetic field-applying layer forms a closed magnetic path with magnetic flux going all the way around the window framework, turning the magnetization of the front frame-constituting portion into a single domain.

摘要翻译： CPP（电流垂直于平面）结构的磁阻器件包括夹在下面的第一基本上软磁屏蔽层和从上方的第二基本软磁屏蔽层之间的磁阻单元，其中沿堆叠方向施加感测电流。 磁阻单元包括夹在第一铁磁层和第二铁磁层之间的非磁性中间层。 第一屏蔽层和第二屏蔽层中的至少一个被配置在平面形状的窗框中，包括前框架构成部分和后框架构成部分，部分地包括具有偏磁场的非磁性间隙层的组合， 应用层。 非磁性间隙层与偏置磁场施加层的组合形成闭合的磁路，其中磁通量一直围绕窗框架，将前框架构成部分的磁化转变为单个畴。

公开(公告)号：US08369192B1

公开(公告)日：2013-02-05

申请号：US13298360

申请日：2011-11-17

申请人： Eiji Komura ,  Koji Shimazawa ,  Tsutomu Chou ,  Shinji Hara ,  Daisuke Miyauchi

发明人： Eiji Komura ,  Koji Shimazawa ,  Tsutomu Chou ,  Shinji Hara ,  Daisuke Miyauchi

IPC分类号： G11B11/00

CPC分类号： G11B5/3116 ,  G11B5/314 ,  G11B5/3163 ,  G11B5/6088 ,  G11B2005/0021

摘要： A thermally-assisted magnetic recording head enables even steeper magnetization reversal between adjacent magnetic domains of a magnetic recording medium and satisfies the demand for high SN ratio and high recording density. The thermally-assisted magnetic recording head includes a pole that generates a writing magnetic field from an end surface that forms a part of an air bearing surface that opposes a magnetic recording medium, a waveguide through which light for exciting surface plasmon propagates, and a plasmon generator that couples to the light in a surface plasmon mode. The plasmon generator has a plane part and a projection part, the pole has a projection part opposing surface that opposes the projection part, and the distance between the projection part opposing surface and the projection part is 10-40 nm.

摘要翻译： 热辅助磁记录头使磁记录介质的相邻磁畴之间的磁化反转能够更高，并满足高SN比和高记录密度的要求。 热辅助磁记录头包括从形成与磁记录介质相对的空气轴承表面的一部分的端面产生书写磁场的磁极，用于激发表面等离子体激元的光传播的波导和等离子体激元 发生器以表面等离子体模式耦合到光。 等离子体发生器具有平面部分和突出部分，所述极具有与突出部分相对的突出部分相对表面，并且突出部分相对表面和突出部分之间的距离为10-40nm。

公开(公告)号：US08094420B2

公开(公告)日：2012-01-10

申请号：US12126567

申请日：2008-05-23

申请人： Toshiyuki Ayukawa ,  Takahiko Machita ,  Daisuke Miyauchi ,  Tsutomu Chou ,  Koji Shimazawa ,  Shinji Hara ,  Tomohito Mizuno ,  Yoshihiro Tsuchiya

发明人： Toshiyuki Ayukawa ,  Takahiko Machita ,  Daisuke Miyauchi ,  Tsutomu Chou ,  Koji Shimazawa ,  Shinji Hara ,  Tomohito Mizuno ,  Yoshihiro Tsuchiya

IPC分类号： G11B5/39

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932

摘要： The invention provides a magnetoresistive device of the CCP (current perpendicular to plane) structure comprising a magnetoresistive unit sandwiched between soft magnetic shield layers with a current applied in the stacking direction. The magnetoresistive unit comprises a nonmagnetic intermediate layer sandwiched between ferromagnetic layers. A planar framework positions the soft magnetic shield layers and comprises a combination of a nonmagnetic gap layer with a bias magnetic field-applying layer constructed by repeating the stacking of a multilayer unit comprising a nonmagnetic underlay layer and a high coercive material layer. The nonmagnetic gap layer is designed and located such that a magnetic flux given out of the bias magnetic field-applying layer is efficiently directed along a closed magnetic path around the framework to form a single domain of magnetization.

摘要翻译： 本发明提供了一种CCP（电流垂直于平面）结构的磁阻器件，其包括夹在软磁屏蔽层之间的磁阻单元，其中沿着层叠方向施加电流。 磁阻单元包括夹在铁磁层之间的非磁性中间层。 平面框架定位软磁屏蔽层，并且包括非磁性间隙层与通过重复堆叠包括非磁性底层和高矫顽材料层的多层单元构成的偏置磁场施加层的组合。 非磁性间隙层被设计和定位成使得从偏置磁场施加层给出的磁通量有效地沿着围绕框架的闭合磁路引导以形成单个磁化域。

公开(公告)号：US08023230B2

公开(公告)日：2011-09-20

申请号：US12289401

申请日：2008-10-27

申请人： Takahiko Machita ,  Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Shinji Hara ,  Koji Shimazawa

发明人： Takahiko Machita ,  Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Shinji Hara ,  Koji Shimazawa

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3912 ,  G11B2005/3996

摘要： A magnetoresistive element includes a pair of shield portions, and an MR stack and a bias magnetic field applying layer that are disposed between the pair of shield portions. The shield portions respectively include single magnetic domain portions. The MR stack includes a pair of ferromagnetic layers magnetically coupled to the pair of single magnetic domain portions, and a spacer layer disposed between the pair of ferromagnetic layers. The MR stack has a front end face, a rear end face and two side surfaces. The magnetoresistive element further includes two flux guide layers disposed between the pair of single magnetic domain portions and respectively adjacent to the two side surfaces of the MR stack. Each of the two flux guide layers has a front end face and a rear end face. The bias magnetic field applying layer has a front end face that faces the rear end face of the MR stack and the respective rear end faces of the two flux guide layers.

摘要翻译： 磁阻元件包括一对屏蔽部分，以及设置在该对屏蔽部分之间的MR堆叠和偏置磁场施加层。 屏蔽部分别包括单个磁畴部分。 MR堆叠包括磁耦合到该对单个磁畴部分的一对铁磁层，以及设置在该对铁磁层之间的间隔层。 MR堆叠具有前端面，后端面和两个侧面。 磁阻元件还包括设置在一对单磁畴部分之间并且分别邻近MR堆叠的两个侧表面的两个磁通引导层。 两个磁通导向层中的每一个具有前端面和后端面。 偏置磁场施加层具有面向MR堆叠的后端面的前端面和两个导流层的各个后端面。

公开(公告)号：US20100103563A1

公开(公告)日：2010-04-29

申请号：US12289517

申请日：2008-10-29

申请人： Takahiko Machita ,  Daisuke Miyauchi ,  Tsutomu Chou ,  Toshiyuki Ayukawa

发明人： Takahiko Machita ,  Daisuke Miyauchi ,  Tsutomu Chou ,  Toshiyuki Ayukawa

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3912 ,  G11B2005/3996

摘要： A magnetoresistive element includes first and second shield portions and an MR stack. Each of the first and second shield portions includes a shield bias magnetic field applying layer, and a closed-magnetic-path-forming portion that forms a closed magnetic path in conjunction of the shield bias magnetic field applying layer. The closed-magnetic-path-forming portion includes a single magnetic domain portion. The MR stack is sandwiched between the respective single magnetic domain portions of the first and second shield portions. The closed-magnetic-path-forming portion includes a magnetic-path-expanding portion that forms a magnetic path, the magnetic path being a portion of the closed magnetic path and located between the shield bias magnetic field applying layer and the single magnetic domain portion. The magnetic-path-expanding portion has two end portions located at both ends of the magnetic path, and a middle portion located between the two end portions. A cross section of the magnetic path at the middle portion is greater in width than a cross section of the magnetic path at each of the two end portions.

摘要翻译： 磁阻元件包括第一和第二屏蔽部分和MR堆叠。 第一和第二屏蔽部分中的每一个包括屏蔽偏置磁场施加层和闭合磁路形成部分，其结合屏蔽偏置磁场施加层形成闭合磁路。 封闭磁路形成部分包括单个磁畴部分。 MR堆叠被夹在第一和第二屏蔽部分的相应单个磁畴部分之间。 闭磁路形成部分包括形成磁路的磁路扩展部分，磁路是封闭磁路的一部分，位于屏蔽偏置磁场施加层和单磁畴部分之间 。 磁路扩展部分具有位于磁路两端的两个端部和位于两个端部之间的中间部分。 在中间部分处的磁路的横截面的宽度大于在两个端部中的每一个处的磁路的横截面。

公开(公告)号：US20100039734A1

公开(公告)日：2010-02-18

申请号：US12222543

申请日：2008-08-12

申请人： Shinji Hara ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Daisuke Miyauchi ,  Takahiko Machita

发明人： Shinji Hara ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Daisuke Miyauchi ,  Takahiko Machita

IPC分类号： G11B5/33

CPC分类号： G11B5/3912 ,  B82Y25/00 ,  G01R31/318536 ,  G01R31/318541 ,  G01R33/093

摘要： A thin film magnetic head includes a magneto-resistance (MR) laminated body, a lower shield layer and an upper shield layer that face the first MR magnetic layer. The lower and upper shield layers respectively have first and second exchange coupling magnetic field application layers and first and second antiferromagnetic layers. An exchange coupling intensity relating to an antiferromagnetic coupling between the second exchange coupling magnetic field application layer and the second antiferromagnetic layer is greater in the peripheral area of a projection area than that of the projection area of the upper shield layer side end surface of the MR laminated body to the film surface's orthogonal direction.

摘要翻译： 薄膜磁头包括面对第一MR磁性层的磁阻（MR）层叠体，下屏蔽层和上屏蔽层。 下屏蔽层和上屏蔽层分别具有第一和第二交换耦合磁场施加层以及第一和第二反铁磁层。 与第二交换耦合磁场施加层和第二反铁磁性层之间的反铁磁耦合有关的交换耦合强度在投影区域的周边区域中大于MR的上屏蔽层侧端面的投影面积 层压体到膜表面的正交方向。

公开(公告)号：US20090303640A1

公开(公告)日：2009-12-10

申请号：US12109651

申请日：2008-04-25

申请人： Tomohito Mizuno ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita ,  Shinji Hara ,  Tsutomu Chou ,  Hironobu Matsuzawa ,  Toshiyuki Ayukawa ,  Tsuyoshi Ichiki

发明人： Tomohito Mizuno ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita ,  Shinji Hara ,  Tsutomu Chou ,  Hironobu Matsuzawa ,  Toshiyuki Ayukawa ,  Tsuyoshi Ichiki

IPC分类号： G11B5/33

CPC分类号： G11B5/3983 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/398 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01L43/08 ,  H01L43/10

摘要： A magneto resistance effect element includes a first magnetic layer, a second magnetic layer and a spacer layer interposed between the first and second magnetic layers. The magneto resistance effect element is configured to allow sense current to flow in a direction that is perpendicular to film planes of the first magnetic layer, the second magnetic layer and the spacer layer so that a relative angle between a magnetization direction of the first magnetic layer and a magnetization direction of the second magnetic layer varies depending on an external magnetic field. The present invention aims at providing a magneto resistance effect element which ensures high resistance to sense current, while limiting the influence of the current limiting layer on the magnetic layer, and which thereby achieves a high magneto resistance ratio.

摘要翻译： 磁阻效应元件包括介于第一和第二磁性层之间的第一磁性层，第二磁性层和间隔层。 磁阻效应元件被配置为允许感测电流在垂直于第一磁性层，第二磁性层和间隔层的膜平面的方向上流动，使得第一磁性层的磁化方向 并且第二磁性层的磁化方向根据外部磁场而变化。 本发明旨在提供一种确保对感应电流的高电阻的磁阻效应元件，同时限制限流层对磁性层的影响，从而实现高的磁阻比。

公开(公告)号：US20090190272A1

公开(公告)日：2009-07-30

申请号：US12019202

申请日：2008-01-24

申请人： Takahiko Machita ,  Koji Shimazawa ,  Daisuke Miyauchi ,  Tsutomu Chou

发明人： Takahiko Machita ,  Koji Shimazawa ,  Daisuke Miyauchi ,  Tsutomu Chou

IPC分类号： G11B5/33

CPC分类号： G11B5/3932 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3912 ,  G11B5/398 ,  H01L43/08

摘要： The invention provides a magnetoresistive device with the CPP (current perpendicular to plane) structure, comprising a magnetoresistive unit, and a first shield layer and a second shield layer located and formed such that the magnetoresistive unit is sandwiched between them, with a sense current applied in a stacking direction, wherein said magnetoresistive unit comprises a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that said nonmagnetic intermediate layer is interposed between them, wherein said first shield layer, and said second shield layer is controlled by magnetization direction control means in terms of magnetization direction, and said first ferromagnetic layer, and said second ferromagnetic layer receives action such that there is an antiparallel magnetization state created, in which mutual magnetizations are in opposite directions, under the influences of magnetic actions of said first shield layer and said second shield layer. It is thus possible to achieve an antiparallel magnetization state for two ferromagnetic layers (free layers) with simple structure yet without being restricted by the material and specific structure of an intermediate film interposed between the two ferromagnetic layers (free layers). Further, it is possible to make improvements in linear recording densities by the adoption of a structure capable of making the “read gap length” (the gap between the upper and lower shield layers) short (narrow) thereby meeting recent demands for ultra-high recording densities. Furthermore, it is possible to obtain stable magnetoresistive changes so that much higher reliability is achievable.

摘要翻译： 本发明提供了一种具有CPP（电流垂直于平面）结构的磁阻器件，包括磁阻单元，以及位于并形成第一屏蔽层和第二屏蔽层，使得磁阻单元夹在它们之间，并施加感应电流 其中所述磁阻单元包括非磁性中间层，以及层叠并形成第一铁磁层和第二铁磁层，使得所述非磁性中间层介于它们之间，其中所述第一屏蔽层和所述第二屏蔽层 在磁化方向上由磁化方向控制装置控制，并且所述第一铁磁层和所述第二铁磁层在磁性的影响下接收作用，使得存在产生相互磁化相反方向的反平行磁化状态 所述第一屏蔽层的动作 和所述第二屏蔽层。 因此，对于具有简单结构的两个铁磁层（自由层）可以实现反平行磁化状态，而不受介于两个铁磁层（自由层）之间的中间膜的材料和特定结构的限制。 此外，通过采用能够使“读取间隙长度”（上下屏蔽层之间的间隙）短（窄）的结构，可以改善线性记录密度，从而满足最近对超高的要求 记录密度 此外，可以获得稳定的磁阻变化，从而可实现更高的可靠性。

公开(公告)号：US08477461B2

公开(公告)日：2013-07-02

申请号：US12219841

申请日：2008-07-29

申请人： Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Shinji Hara ,  Daisuke Miyauchi ,  Takahiko Machita

发明人： Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Shinji Hara ,  Daisuke Miyauchi ,  Takahiko Machita

IPC分类号： G11B5/39 ,  G11B5/10

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11B5/3912 ,  H01L43/08

摘要： A thin film magnetic head including an MR laminated body composed of a first and second MR magnetic layers, first and second shield layers, and a bias magnetic field application layer provided on an opposite side of an air bearing surface (ABS) of the MR laminated body in order to apply a bias magnetic field orthogonal relative to the ABS. The first shield layer includes a first exchange coupling magnetic field application layer and a first antiferromagnetic layer; and the second shield layer includes a second exchange coupling magnetic field application layer and a second antiferromagnetic layer.

摘要翻译： 一种薄膜磁头，其包括由第一和第二MR磁性层组成的MR层叠体，第一和第二屏蔽层以及设置在MR叠片的空气轴承表面（ABS）的相对侧上的偏置磁场施加层 以便施加相对于ABS正交的偏置磁场。 第一屏蔽层包括第一交换耦合磁场施加层和第一反铁磁层; 并且第二屏蔽层包括第二交换耦合磁场施加层和第二反铁磁层。