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    Magneto-resistive effect element having spacer layer including main spacer layer containing gallium oxide and nonmagnetic layer
    1.
    发明授权
    Magneto-resistive effect element having spacer layer including main spacer layer containing gallium oxide and nonmagnetic layer 有权
    具有间隔层的磁阻效应元件包括含有氧化镓和非磁性层的主间隔层

    公开(公告)号：US08405935B2

    公开(公告)日：2013-03-26

    申请号：US12979613

    申请日：2010-12-28

    申请人： Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Hironobu Matsuzawa ,  Hayato Koike

    发明人： Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Hironobu Matsuzawa ,  Hayato Koike

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3929 ,  G11B2005/3996 ,  Y10T428/1121

    摘要： A magnetoresistive effect element (MR element) includes first and second magnetic layers of which relative angles formed by magnetization directions change in relation to an external magnetic field; and a spacer layer positioned between the first magnetic layer and the second magnetic layer. The first magnetic layer is positioned on a side closer than the second magnetic layer in regards to a substrate above which the magnetoresistive effect element is formed, and the spacer layer includes a main spacer layer made of gallium oxide as the primary component, and a first nonmagnetic layer positioned between the main spacer layer and the first magnetic layer and contains copper and gallium.

    摘要翻译： 磁阻效应元件（MR元件）包括由磁化方向形成的相对角度相对于外部磁场而变化的第一和第二磁性层; 以及位于所述第一磁性层和所述第二磁性层之间的间隔层。 相对于其上形成有磁阻效应元件的基板，第一磁性层位于比第二磁性层更靠近的一侧，并且间隔层包括以氧化镓为主要成分的主间隔层，第一磁性层 位于主间隔层和第一磁性层之间并且包含铜和镓的非磁性层。

    MAGNETO-RESISTIVE EFFECT ELEMENT HAVING SPACER LAYER CONTAINING GALLIUM OXIDE, PARTIALLY OXIDIZED COPPER
    2.
    发明申请
    MAGNETO-RESISTIVE EFFECT ELEMENT HAVING SPACER LAYER CONTAINING GALLIUM OXIDE, PARTIALLY OXIDIZED COPPER 有权
    含有氧化铝，部分氧化铜的间隔层的磁电阻效应元件

    公开(公告)号：US20120237796A1

    公开(公告)日：2012-09-20

    申请号：US13049195

    申请日：2011-03-16

    申请人： Hayato KOIKE ,  Tsutomu CHOU ,  Yoshihiro TSUCHIYA ,  Hironobu MATSUZAWA

    发明人： Hayato KOIKE ,  Tsutomu CHOU ,  Yoshihiro TSUCHIYA ,  Hironobu MATSUZAWA

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3929 ,  B82Y10/00 ,  B82Y25/00 ,  G11B2005/3996 ,  Y10T428/1121

    摘要： A magneto-resistive effect (MR) element includes first and second magnetic layers where a relative angle formed by magnetization directions changes in response to an external magnetic field and a spacer layer positioned between the first magnetic layer and the second magnetic layer. The first magnetic layer is positioned closer to a substrate above which the MR element is formed than the second magnetic layer. The spacer layer includes a main spacer layer that is composed of gallium oxide as a primary component and a bottom layer that is positioned between the main spacer layer and the first magnetic layer and that is composed of partially oxidized copper as a primary component.

    摘要翻译： 磁阻效应（MR）元件包括第一和第二磁性层，其中由磁化方向形成的相对角响应于外部磁场而变化，并且间隔层位于第一磁性层和第二磁性层之间。 第一磁性层定位成比第二磁性层更靠近形成MR元件的衬底。 间隔层包括由氧化镓作为主要成分构成的主间隔层和位于主间隔层和第一磁性层之间并由部分氧化的铜作为主要成分的底层。

    Magneto-resistive effect element provided with GaN spacer layer
    5.
    发明申请
    Magneto-resistive effect element provided with GaN spacer layer 有权
    具有GaN间隔层的磁阻效应元件

    公开(公告)号：US20100232066A1

    公开(公告)日：2010-09-16

    申请号：US12382137

    申请日：2009-03-10

    申请人： Shinji Hara ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Hironobu Matsuzawa

    发明人： Shinji Hara ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Hironobu Matsuzawa

    IPC分类号： G11B5/60 ,  G11B5/127 ,  G11B5/48

    CPC分类号： G11B5/3906 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B2005/3996 ,  H01L43/08 ,  H01L43/10

    摘要： A magneto-resistive effect (MR) element includes a first magnetic layer and a second magnetic layer in which a relative angle of magnetization directions of the first and second magnetic layers changes according to an external magnetic field; and a spacer layer that is provided between the first magnetic layer and the second magnetic layer. The spacer layer contains gallium nitride (GaN) as a main component. A thin film magnetic head according to one embodiment of the present invention is provided with the following structures: an MR element mentioned above that has a first magnetic layer and a second magnetic layer, as free layers, in which the magnetization direction in the two layers changes according to the external magnetic field; a bias magnetic field application layer that applies a bias magnetic field to the first and second magnetic layers in an orthogonal direction to an air bearing surface (ABS); the bias magnetic field application layer is formed in a rear side of the MR element seen from the ABS; and a sense current flows in an orthogonal direction to a layer surface of the MR element.

    摘要翻译： 磁阻效应（MR）元件包括第一磁性层和第二磁性层，其中第一和第二磁性层的磁化方向的相对角度根据外部磁场而改变; 以及设置在第一磁性层和第二磁性层之间的间隔层。 间隔层包含氮化镓（GaN）作为主要成分。 根据本发明的一个实施例的薄膜磁头具有以下结构：上述具有第一磁性层和第二磁性层作为自由层的MR元件，其中两层中的磁化方向 根据外部磁场变化; 偏置磁场施加层，其在与空气轴承表面（ABS）正交的方向上对第一和第二磁性层施加偏置磁场; 偏置磁场施加层形成在从ABS看到的MR元件的后侧; 并且感测电流在与MR元件的层表面正交的方向上流动。

    MAGNETO-RESISTIVE EFFECT DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM
    7.
    发明申请
    MAGNETO-RESISTIVE EFFECT DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM 有权
    CPP类型和磁盘系统的磁阻效应器件

    公开(公告)号：US20090190270A1

    公开(公告)日：2009-07-30

    申请号：US12022538

    申请日：2008-01-30

    申请人： Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita ,  Shinji Hara ,  Tomohito Mizuno ,  Hironobu Matsuzawa ,  Toshiyuki Ayukawa ,  Koji Shimazawa ,  Kiyoshi Noguchi

    发明人： Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita ,  Shinji Hara ,  Tomohito Mizuno ,  Hironobu Matsuzawa ,  Toshiyuki Ayukawa ,  Koji Shimazawa ,  Kiyoshi Noguchi

    IPC分类号： G11B5/33

    CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3916 ,  G11B5/3932 ,  G11B5/3967

    摘要： The invention provides a magnetoresistive device with the CPP (current perpendicular to plane) structure, comprising a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed with said nonmagnetic intermediate layer interposed between them, with a sense current applied in the stacking direction, wherein each of said first and second ferromagnetic layers comprises a sensor area joining to the nonmagnetic intermediate layer near a medium opposite plane and a magnetization direction control area that extends further rearward (toward the depth side) from the position of the rear end of said nonmagnetic intermediate layer; a magnetization direction control multilayer arrangement is interposed at an area where the magnetization direction control area for said first ferromagnetic layer is opposite to the magnetization direction control area for said second ferromagnetic layer in such a way that the magnetizations of the said first and second ferromagnetic layers are antiparallel with each other along the width direction axis; and said sensor area is provided at both width direction ends with biasing layers working such that the mutually antiparallel magnetizations of said first and second ferromagnetic layers intersect in substantially orthogonal directions. It is thus possible to obtain a magnetoresistive device that, while the magnetization directions of two magnetic layers (free layers) stay stabilized, can have high reliability, and can improve linear recording densities by the adoption of a structure capable of narrowing the read gap (the gap between the upper and lower shields) thereby meeting recent demands for ultra-high recording densities.

    摘要翻译： 本发明提供了一种具有CPP（电流垂直于平面）结构的磁阻器件，包括非磁性中间层，并且第一铁磁层和第二铁磁层层叠并形成有介于它们之间的所述非磁性中间层，施加感应电流 其特征在于，所述第一和第二铁磁体层中的每一个包括与介质相对平面附近的非磁性中间层连接的传感器区域和从所述第一和第二铁磁层的位置向后延伸（朝向深度侧）的磁化方向控制区域 所述非磁性中间层的后端; 磁化方向控制多层布置被插入在所述第一铁磁层的磁化方向控制区域与所述第二铁磁层的磁化方向控制区域相反的区域处，使得所述第一和第二铁磁层的磁化 沿着宽度方向轴线彼此反平行; 并且所述传感器区域设置在两个宽度方向端，偏压层工作，使得所述第一和第二铁磁层的相互反平行磁化在大致正交的方向相交。 因此，可以获得在两个磁性层（自由层）的磁化方向保持稳定的同时可以具有高可靠性的磁阻器件，并且可以通过采用能够缩小读取间隙的结构来提高线性记录密度（ 上，下屏蔽之间的间隙），从而满足了对超高记录密度的最新要求。

    Magneto-resistive effect element having spacer layer including main spacer layer containing gallium oxide and metal intermediate layer
    8.
    发明授权
    Magneto-resistive effect element having spacer layer including main spacer layer containing gallium oxide and metal intermediate layer 有权
    具有间隔层的磁阻效应元件包括含有氧化镓和金属中间层的主间隔层

    公开(公告)号：US08593766B2

    公开(公告)日：2013-11-26

    申请号：US13031822

    申请日：2011-02-22

    申请人： Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Hironobu Matsuzawa ,  Hayato Koike

    发明人： Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Hironobu Matsuzawa ,  Hayato Koike

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3929 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B2005/3996

    摘要： A magneto-resistive effect (MR) element includes first and second magnetic layers in which a relative angle formed by magnetization directions changes responsive to an external magnetic field, and a spacer layer positioned between the first and second magnetic layers. The first magnetic layer is positioned closer to a substrate above which the MR element is formed than the second magnetic layer. The spacer layer includes copper and metal intermediate layers and a main spacer layer composed primarily of gallium oxide. The copper and metal intermediate layers are positioned between the main spacer and first magnetic layers. The metal intermediate layer is positioned between the copper and main spacer layers. The metal intermediate layer is composed primarily of at least one from a group of one of magnesium and at least partially oxidized magnesium, and one of aluminum and at least partially oxidized aluminum.

    摘要翻译： 磁阻效应（MR）元件包括其中由磁化方向形成的相对角响应于外部磁场而变化的第一和第二磁性层以及位于第一和第二磁性层之间的间隔层。 第一磁性层定位成比第二磁性层更靠近形成MR元件的衬底。 间隔层包括铜和金属中间层以及主要由氧化镓组成的主间隔层。 铜和金属中间层位于主间隔物和第一磁性层之间。 金属中间层位于铜和主间隔层之间。 金属中间层主要由镁和至少部分氧化的镁中的至少一种以及铝和至少部分氧化的铝中的一种组成。

    MAGNETO-RESISTIVE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC HEAD SLIDER, HEAD GIMBAL ASSEMBLY AND HARD DISK DRIVE APPARATUS
    9.
    发明申请
    MAGNETO-RESISTIVE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC HEAD SLIDER, HEAD GIMBAL ASSEMBLY AND HARD DISK DRIVE APPARATUS 有权
    磁阻效应元件，磁头，磁头滑块，头盖组件和硬盘驱动器

    公开(公告)号：US20120196153A1

    公开(公告)日：2012-08-02

    申请号：US13017200

    申请日：2011-01-31

    申请人： Hironobu MATSUZAWA ,  Yoshihiro Tsuchiya ,  Hayato Koike ,  Tsutomu Chou

    发明人： Hironobu MATSUZAWA ,  Yoshihiro Tsuchiya ,  Hayato Koike ,  Tsutomu Chou

    IPC分类号： G11B5/39 ,  B05D5/12

    CPC分类号： G11B5/3906 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3909 ,  G11B2005/3996 ,  Y10T428/1114 ,  Y10T428/1121

    摘要： An MR element includes a stack, being a pillar or trapezoidal stack, including first and second magnetic layers in which a relative angle formed by magnetization directions changes according to an external magnetic field, and a spacer layer that is positioned between the first magnetic layer and the second magnetic layer, and that is provided with a main spacer layer that is composed of gallium oxide, zinc oxide or magnesium oxide as a primary component, wherein, one part of side surfaces of the stack forms a part of an air bearing surface; and a cover layer that covers at least another part of the side surfaces of the stack and that is composed of gallium oxide as a primary component.

    摘要翻译： MR元件包括作为柱或梯形叠层的叠层，包括第一和第二磁性层，其中由磁化方向形成的相对角度根据外部磁场而变化;以及间隔层，其位于第一磁性层和第二磁性层之间， 第二磁性层，并且设置有由氧化镓，氧化锌或氧化镁作为主要成分构成的主间隔层，其中堆叠的一部分侧表面形成空气轴承表面的一部分; 以及覆盖层，其覆盖所述堆叠的至少另一部分侧表面，并且由氧化镓作为主要成分构成。