摘要:
A NAND flash memory structure with a wordline or control gate that provides shielding from Yupin effect errors and generally from potentials in adjacent strings undergoing programming operations with significant variations in potential.
摘要:
A NAND flash memory structure with a wordline or control gate that provides shielding from Yupin effect errors and generally from potentials in adjacent strings undergoing programming operations with significant variations in potential.
摘要:
A NAND flash memory structure with a wordline or control gate that provides shielding from Yupin effect errors and generally from potentials in adjacent strings undergoing programming operations with significant variations in potential.
摘要:
A NAND flash memory structure with a wordline or control gate that provides shielding from Yupin effect errors and generally from potentials in adjacent strings undergoing programming operations with significant variations in potential.
摘要:
Several embodiments of flash EEPROM split-channel cell arrays are described that position the channels of cell select transistors along sidewalls of trenches in the substrate, thereby reducing the cell area. Select transistor gates are formed as part of the word lines and extend downward into the trenches with capacitive coupling between the trench sidewall channel portion and the select gate. In one embodiment, trenches are formed between every other floating gate along a row, the two trench sidewalls providing the select transistor channels for adjacent cells, and a common source/drain diffusion is positioned at the bottom of the trench. A third gate provides either erase or steering capabilities. In another embodiment, trenches are formed between every floating gate along a row, a source/drain diffusion extending along the bottom of the trench and upwards along one side with the opposite side of the trench being the select transistor channel for a cell. In another embodiment, select transistor gates of dual floating gate memory cells are extended into trenches or recesses in the substrate in order to lengthen the select transistor channel as the surface dimensions of the cell are being decreased. Techniques for manufacturing such flash EEPROM split-channel cell arrays are also included.
摘要:
Several embodiments of flash EEPROM split-channel cell arrays are described that position the channels of cell select transistors along sidewalls of trenches in the substrate, thereby reducing the cell area. Select transistor gates are formed as part of the word lines and extend downward into the trenches with capacitive coupling between the trench sidewall channel portion and the select gate. In one embodiment, trenches are formed between every other floating gate along a row, the two trench sidewalls providing the select transistor channels for adjacent cells, and a common source/drain diffusion is positioned at the bottom of the trench. A third gate provides either erase or steering capabilities. In another embodiment, trenches are formed between every floating gate along a row, a source/drain diffusion extending along the bottom of the trench and upwards along one side with the opposite side of the trench being the select transistor channel for a cell. In another embodiment, select transistor gates of dual floating gate memory cells are extended into trenches or recesses in the substrate in order to lengthen the select transistor channel as the surface dimensions of the cell are being decreased. Techniques for manufacturing such flash EEPROM split-channel cell arrays are also included.
摘要:
The present invention discloses an improved wireless audio output assembly for projectors, which comprises a system unit having a projector circuit therein and a projector lens disposed on the exterior of the system unit, and the system unit has a card-type wireless audio output circuit installed therein and a wireless active speaker installed on the exterior of the system unit, so that a projector can be used as a standalone device without connecting to external cables to read data from a memory card, view video images, and read audio/video signals of an optical disk. The projector can be upgraded to the user's desired wireless audio output circuit by inserting various different cards for the expansion.
摘要:
This invention generally relates to liquid phase oxidation processes for making N-(phosphonomethyl)glycine (also known in the agricultural chemical industry as glyphosate) and related compounds. This invention, for example, particularly relates to processes wherein an N-(phosphonomethyl)iminodiacetic acid (NPMIDA) substrate (i.e., N-(phosphonomethyl)iminodiacetic acid, a salt of N-(phosphonomethyl)iminodiacetic acid, or an ester of N-(phosphonomethyl)iminodiacetic acid) is continuously oxidized to form an N-(phosphonomethyl)glycine product (i.e., N-(phosphonomethyl)glycine, a salt of N-(phosphonomethyl)glycine, or an ester of N-(phosphonomethyl)glycine). This invention also, for example, particularly relates to processes wherein an N-(phosphonomethyl)iminodiacetic acid substrate is oxidized to form an N-(phosphonomethyl)glycine product, which, in turn, is crystallized (at least in part) in an adiabatic crystallizer.
摘要:
A NAND flash memory structure and method of making a flash memory structure with a wordline that provides shielding from Yupin effect errors and from disturbs.
摘要:
An improved process for recovering a crystalline product (particularly an N-(phosphonomethyl)glycine product) from a solution comprising both a product subject to crystallization and undesired impurities is provided.