Programming a RRAM method and apparatus
    61.
    发明授权
    Programming a RRAM method and apparatus 有权
    编程RRAM方法和设备

    公开(公告)号:US09001552B1

    公开(公告)日:2015-04-07

    申请号:US13531449

    申请日:2012-06-22

    IPC分类号: G11C11/00 G11C11/404

    摘要: A circuit for programming a resistive switching device includes a resistive switching device characterized by a programmable resistance, the resistive switching device comprising a first terminal, a second terminal, and a resistive switching element, a first circuit configured to supply a programming voltage to the resistive switching device and to supply a predetermined current to flow in the resistive switching device, and a second circuit coupled to the first circuit and to the resistive switching device, wherein the second circuit is configured to terminate the supply of the programming voltage to the resistive switching device when the predetermined current flows in the resistive switching device.

    摘要翻译: 一种用于编程电阻性开关器件的电路包括一个以可编程电阻为特征的电阻开关器件,该电阻开关器件包括一个第一端子,一个第二端子和一个电阻性开关元件,第一电路被配置为向电阻 并且提供预定电流以在所述电阻开关器件中流动;以及第二电路,耦合到所述第一电路和所述电阻开关器件,其中所述第二电路被配置为终止所述编程电压到所述电阻开关的供应 当预定电流在电阻式开关装置中流动时,装置。

    Method of programming a non-volatile memory cell to eliminate or to minimize program deceleration
    63.
    发明授权
    Method of programming a non-volatile memory cell to eliminate or to minimize program deceleration 有权
    编程非易失性存储单元以消除或最小化程序减速的方法

    公开(公告)号:US07102930B2

    公开(公告)日:2006-09-05

    申请号:US10944584

    申请日:2004-09-16

    IPC分类号: G11C16/04

    CPC分类号: G11C16/12

    摘要: A method to eliminate program deceleration and to enhance the resistance to program disturbance of a non-volatile floating gate memory cell is disclosed. This method eliminates or minimizes the impact of the hole displacement current. This can be done, for example, by increasing the rise time of the high programming voltage applied to the high voltage terminal. Alternatively, the transistor of the non-volatile floating gate memory cell can be turned off until the voltage applied to the high voltage terminal has reached the programming voltage. This can be done, for example by delaying the voltage applied to either the low voltage terminal or to the control gate to turn on the transistor until the voltage at the high voltage terminal has past the ramp up voltage and has reached a level programming voltage.

    摘要翻译: 公开了一种消除程序减速并增强对非易失性浮动栅极存储单元的编程干扰的阻力的方法。 该方法消除或最小化孔位移电流的影响。 这可以通过例如增加施加到高电压端子的高编程电压的上升时间来实现。 或者,非易失性浮栅存储单元的晶体管可以被截止,直到施加到高电压端子的电压达到编程电压。 这可以通过例如通过延迟施加到低电压端子或控制栅极的电压来导通晶体管,直到高压端子处的电压已经超过斜坡上升电压并达到电平编程电压。