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72 条记录 (耗时 0.022 秒)

    System and method for fast network re-entry in a broadband wireless access communication system
    61.
    发明授权
    System and method for fast network re-entry in a broadband wireless access communication system 有权
    宽带无线接入通信系统中快速网络重入的系统和方法

    公开(公告)号：US07945265B2

    公开(公告)日：2011-05-17

    申请号：US11872529

    申请日：2007-10-15

    申请人： Seung-Il Yoon ,  Tae-Ho Kim ,  Jun-Hyuk Song ,  Hong-Sung Chang ,  Tae-Won Kim ,  Yong Chang

    发明人： Seung-Il Yoon ,  Tae-Ho Kim ,  Jun-Hyuk Song ,  Hong-Sung Chang ,  Tae-Won Kim ,  Yong Chang

    IPC分类号： H04W36/00 ,  H04W4/00

    CPC分类号： H04W36/0033 ,  H04W12/04 ,  H04W60/04

    摘要： A system and method for fast network re-entry in a broadband wireless access communication system. A mobile station transmits a first message requiring fast network re-entry to a base station and performs the fast network re-entry together with the base station when receiving a second message approving the fast network re-entry from the base station. The base station receives the first message, authenticates the first message using final session information of the mobile station that is previously stored in the base station, transmits the second message to the mobile station when succeeding in authentication of the first message, and performs the fast network re-entry together with the mobile station.

    摘要翻译： 一种用于宽带无线接入通信系统中快速网络重入的系统和方法。 当从基站接收到批准从快速网络重新进入的第二消息时，移动台向基站发送要求快速网络重入的第一消息，并与基站一起执行快速网络重新进入。 基站接收第一消息，使用先前存储在基站中的移动台的最终会话信息来认证第一消息，当成功认证第一消息时将第二消息发送给移动台，并且执行快速 与移动台一起重新进入网络。

    Method for manufacturing flash memory cell by rie slope etching reflowed photoresist pattern
    65.
    发明授权
    Method for manufacturing flash memory cell by rie slope etching reflowed photoresist pattern 有权
    通过斜面蚀刻回流光致抗蚀剂图案来制造闪存单元的方法

    公开(公告)号：US07691705B2

    公开(公告)日：2010-04-06

    申请号：US11613783

    申请日：2006-12-20

    申请人： Tae-Ho Kim

    发明人： Tae-Ho Kim

    IPC分类号： H01L21/336 ,  H01L21/28

    CPC分类号： H01L27/11521

    摘要： A method for manufacturing a flash memory cell with a floating gate and a control gate having an increased coupling ratio due to an increase in gate capacitance. The gate size is increased by reducing a groove width in a photoresist pattern used to define the gate region. The groove width is reduced by employing a slope-etching process to form the photoresist pattern.

    摘要翻译： 一种用于利用栅极电容增加来制造具有浮动栅极和控制栅极的闪速存储单元的方法，该方法具有增加的耦合比。 通过减小用于限定栅极区域的光致抗蚀剂图案中的沟槽宽度来增加栅极尺寸。 通过采用斜面蚀刻工艺来形成光刻胶图案来减小沟槽宽度。

    MP3 player
    70.
    外观设计
    MP3 player 有权

    公开(公告)号：USD525988S1

    公开(公告)日：2006-08-01

    申请号：US29235014

    申请日：2005-07-26

    申请人： Tae-Ho Kim

    设计人： Tae-Ho Kim