公开(公告)号：US12110584B2

公开(公告)日：2024-10-08

申请号：US17361231

申请日：2021-06-28

申请人： Applied Materials, Inc.

发明人： Chandan Das ,  Susmit Singha Roy ,  Bhaskar Jyoti Bhuyan ,  John Sudijono ,  Abhijit Basu Mallick ,  Mark Saly

IPC分类号： C23C16/30 ,  C23C16/04 ,  C23C16/06 ,  C23C16/448 ,  H01L21/02

CPC分类号： C23C16/305 ,  C23C16/04 ,  C23C16/06 ,  C23C16/4485 ,  H01L21/0228

摘要： Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a precursor and a chalcogenide reactant to form the transition metal dichalcogenide film. The exposures can be sequential or simultaneous.

公开(公告)号：US20240327979A1

公开(公告)日：2024-10-03

申请号：US18573621

申请日：2021-07-28

申请人： MAX-PLANCK-GESELLSCHAFT ZUR FÖRDERUNG DER WISSENSCHAFTEN E.V.

发明人： Wolfgang BRAUN

IPC分类号： C23C16/448 ,  C23C16/458 ,  C23C16/48

CPC分类号： C23C16/4485 ,  C23C16/4583 ,  C23C16/48

摘要： The present invention is related to a method of coating a coating region (58) on a front surface (56) of a substrate (50) with a source material (40) thermally evaporated and/or sublimated from a source (30) by electromagnetic radiation (80). Further, the present invention is related to an apparatus (100) for a thermal evaporation system (200) for coating a coating region (58) on a front surface (56) of a substrate (50) with a source material (40) thermally evaporated and/or sublimated by electromagnetic radiation (80) from a source (30).

公开(公告)号：US11959170B2

公开(公告)日：2024-04-16

申请号：US17333820

申请日：2021-05-28

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Soyoung Lee ,  Hyunjae Lee ,  Ik Soo Kim ,  Jang-Hee Lee

IPC分类号： C23C16/448 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02 ,  B01B1/00 ,  C23C14/24

CPC分类号： C23C16/45544 ,  C23C16/4412 ,  C23C16/4483 ,  H01L21/02175 ,  H01L21/0228 ,  B01B1/005 ,  C23C14/243 ,  C23C16/4485 ,  C23C16/45561

摘要： Provided are a precursor supply unit, a substrate processing system, and a method of fabricating a semiconductor device using the same. The precursor supply unit may include an outer container, an inner container provided in the outer container and used to store a precursor source, a gas injection line having an injection port, which is provided below the inner container and in the outer container and is used to provide a carrier gas into the outer container, and a gas exhaust line having an exhaust port, which is provided below the inner container and in the outer container and is used to exhaust the carrier gas in the outer container and a precursor produced from the precursor source.

公开(公告)号：US11937919B2

公开(公告)日：2024-03-26

申请号：US17250818

申请日：2019-09-13

申请人： THE SECRETARY OF STATE FOR DEFENCE

发明人： Roberto Stefano Pasquale King ,  Martin Wayne Millington ,  Andrew Worsfold

IPC分类号： A61B5/1172 ,  B05D1/00 ,  C01B21/00 ,  C23C14/00 ,  C23C16/448

CPC分类号： A61B5/1172 ,  B05D1/60 ,  C23C16/4485 ,  C01B21/00 ,  C23C14/00

摘要： The invention relates to an apparatus for the visualisation of a print on an object, the apparatus comprising: a base comprising a heating element in thermal communication with a receptacle for storing an agent, a housing to provide a sealed chamber; and a port for applying a vacuum to, or releasing a vacuum from, the sealed chamber. The invention is particularly for the visualisation of a fingerprint such as a latent fingerprint. The invention also relates to a system incorporating the apparatus with a cartridge and agent, and associated methods and uses for visualising a print on an object.

公开(公告)号：US20180245209A1

公开(公告)日：2018-08-30

申请号：US15904647

申请日：2018-02-26

申请人： SIVA POWER, INC.

发明人： Markus Eberhard Beck ,  Ulrich Alexander Bonne ,  Robert G. Wendt

IPC分类号： C23C14/26 ,  H01L51/56 ,  H01L31/046 ,  H01L31/18 ,  H01L31/032 ,  H01L51/00 ,  C23C14/24 ,  F28D15/00 ,  F25D17/02 ,  F25B39/00 ,  C23C16/52 ,  C23C16/448 ,  C23C16/28 ,  C23C16/02 ,  C23C14/54 ,  F25B39/02 ,  H01L21/02

CPC分类号： C23C14/26 ,  C23C14/24 ,  C23C14/243 ,  C23C14/542 ,  C23C16/0209 ,  C23C16/28 ,  C23C16/448 ,  C23C16/4485 ,  C23C16/52 ,  F25B39/00 ,  F25B39/02 ,  F25D17/02 ,  F28D15/00 ,  H01L21/02568 ,  H01L21/02631 ,  H01L31/0322 ,  H01L31/0326 ,  H01L31/046 ,  H01L31/18 ,  H01L51/001 ,  H01L51/56 ,  Y02E10/541

摘要： In various embodiments, evaporation sources for deposition systems are heated and/or cooled via a fluid-based thermal management system.

公开(公告)号：US09994955B2

公开(公告)日：2018-06-12

申请号：US14650496

申请日：2013-11-20

申请人： FUJIKIN INCORPORATED

发明人： Atsushi Hidaka ,  Masaaki Nagase ,  Satoru Yamashita ,  Kouji Nishino ,  Nobukazu Ikeda

IPC分类号： F22B1/28 ,  F24H1/18 ,  C23C16/448 ,  F17C9/02 ,  C23C16/52

CPC分类号： C23C16/4485 ,  C23C16/4481 ,  C23C16/4482 ,  C23C16/52 ,  F17C9/02 ,  F22B1/284 ,  F22B1/285

摘要： The present invention provides a raw material vaporization and supply device including a raw material receiving tank, a vaporizer for vaporizing liquid pressure-fed from the liquid receiving tank, a flow rate control device for adjusting a flow rate of raw material gas from the vaporizer, and a heating device for heating the vaporizer, the high-temperature pressure-type flow rate control device, and desired sections of flow passages connected to these devices, wherein Al2O3 passivation treatment, Cr2O3 passivation treatment, or FeF2 passivation treatment is applied to liquid contact parts or gas contact parts of metal surfaces of at least any of the raw material receiving tank, the vaporizer, the flow rate control device, the flow passages that links these component devices, or opening-and-closing valves that are disposed in the flow passages.

公开(公告)号：US20180071702A1

公开(公告)日：2018-03-15

申请号：US15565696

申请日：2016-04-11

申请人： FUJIKIN INCORPORATED

发明人： Atsushi HIDAKA ,  Masaaki NAGASE ,  Kaoru HIRATA ,  Katsuyuki SUGITA ,  Takatoshi NAKATANI ,  Satoru YAMASHITA ,  Kouji NISHINO ,  Nobukazu IKEDA ,  Keiji HIRAO

IPC分类号： B01J4/00 ,  B01J7/02 ,  C23C16/448 ,  H01L21/3213 ,  H01L21/67

CPC分类号： B01J4/008 ,  B01J7/02 ,  C23C16/448 ,  C23C16/4485 ,  C23C16/52 ,  H01L21/205 ,  H01L21/31 ,  H01L21/32135 ,  H01L21/6708

摘要： A vaporization supply apparatus comprises a vaporizer which heats and vaporize a liquid, a flow-rate control device which controls a flow rate of a gas sent out from the vaporizer, a first control valve interposed in a supply channel of a liquid to the vaporizer, a pressure detector for detecting a pressure of a gas vaporized by the vaporizer, a liquid detection part for measuring parameters of a liquid in an amount higher than a predetermined amount in the vaporizer, and a control device which controls the first control valve to supply a predetermined amount of a liquid to the vaporizer based on the pressure value detected by the pressure detector, and to close the first control valve when the liquid detection part detect a liquid in an amount higher than the predetermined amount.

公开(公告)号：US20170335455A1

公开(公告)日：2017-11-23

申请号：US15672163

申请日：2017-08-08

申请人： SPTS Technologies Ltd.

发明人： Boris Kobrin ,  Romuald Nowak ,  Richard C. Yi ,  Jeffrey D. Chinn

IPC分类号： C23C16/455 ,  B82Y30/00 ,  C23C16/448 ,  B05D1/00 ,  B05D3/14

CPC分类号： C23C16/45557 ,  B05D1/60 ,  B05D3/142 ,  B82Y30/00 ,  C23C16/4485 ,  C23C16/45561

摘要： An apparatus for vapor deposition of thin film coatings, including: a process controller; a plurality of precursor containers into which a plurality of coating precursors, each in the form of a liquid or a solid, are respectively placed; a plurality of precursor vapor reservoirs, each in communication with a respective one of said precursor containers; a plurality of in-line devices which control a vapor flow of a coating precursor vapor from one of said precursor containers into one of said precursor vapor reservoirs with which said precursor container is in communication upon receipt of a signal from said process controller; a plurality of precursor control valves which control vapor flow from said precursor vapor reservoir upon receipt of a signal from said process controller; and a process chamber for vapor deposition of said coating on a substrate when present in said process chamber.

公开(公告)号：US09725800B2

公开(公告)日：2017-08-08

申请号：US14794109

申请日：2015-07-08

申请人： Kabushiki Kaisha Toshiba

发明人： Mari Kusunoki ,  Shinji Miyazaki

IPC分类号： C23C14/24 ,  B65D88/02 ,  C23C16/448 ,  C23C16/52

CPC分类号： C23C14/243 ,  B65D88/022 ,  B65D88/027 ,  C23C16/4485 ,  C23C16/52 ,  Y10T137/4673 ,  Y10T137/469 ,  Y10T137/474 ,  Y10T137/479 ,  Y10T137/4841 ,  Y10T137/4857 ,  Y10T137/86187 ,  Y10T137/8622 ,  Y10T137/86228

摘要： According to one embodiment, a vaporizing system comprises first and second tanks that can accumulate liquid source and first, second, and third pipes. The first pipe allows first gas to be sent out of the first tank. The second pipe allows second gas to be sent out of the second tank. The third pipe is connected to the first and second pipes and allows the first and second gas to be sent out to an external apparatus. The first tank is placed on an upper side of the second tank in a stacked manner.

公开(公告)号：US09611546B2

公开(公告)日：2017-04-04

申请号：US15099687

申请日：2016-04-15

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Chung-Liang Cheng ,  Chien-Hao Tseng ,  Yen-Yu Chen ,  Ching-Chia Wu ,  Chang-Sheng Lee ,  Wei Zhang

IPC分类号： H01L21/469 ,  C23C16/44 ,  H01L21/28 ,  C23C16/448 ,  C23C16/455 ,  H01L29/51

CPC分类号： C23C16/4402 ,  C23C16/4481 ,  C23C16/4485 ,  C23C16/45544 ,  C23C16/45553 ,  H01L21/28158 ,  H01L21/28167 ,  H01L21/28185 ,  H01L29/517

摘要： A method for fabricating a semiconductor structure and a solid precursor delivery system for a semiconductor fabrication is provided, the method including: providing a solid precursor having a first average particle size; solving the solid precursor in an organic solvent into an intermediate; recrystallizing the intermediate to form solid granules, wherein the solid granules has a second average particle size larger than the first average particle size; vaporizing the solid granules to form a film-forming gas; and depositing the film-forming gas on a substrate to form a resistance film.