公开(公告)号：US06913972B2

公开(公告)日：2005-07-05

申请号：US09927594

申请日：2001-08-10

申请人： Ja-hyung Han ,  Myung-sik Han ,  Kyung-hyun Kim ,  Chang-ki Hong

发明人： Ja-hyung Han ,  Myung-sik Han ,  Kyung-hyun Kim ,  Chang-ki Hong

IPC分类号： H01L21/8247 ,  H01L27/115 ,  H01L29/788 ,  H01L21/336

CPC分类号： H01L27/11521 ,  H01L27/115 ,  H01L27/11524

摘要： A method for fabricating a non-volatile memory device is provided. The method for fabricating a non-volatile memory device includes the steps of: forming a gate pattern in which a first conductive layer is used as a floating gate, a second conductive layer is used as a control gate, the first conductive layer, a dielectric layer, and the second conductive layer are sequentially stacked on a semiconductor substrate; forming a polishing stopper on the gate pattern and the semiconductor substrate; forming an interlayer insulating layer on the polishing stopper; forming a common source line (CSL) by etching a portion of the interlayer insulating layer, and a portion of the polishing stopper, and depositing a conductive material to the etched portions; planarizing the common source line and the interlayer insulating layer until the surface of the polishing stopper is exposed; partially etching back the polishing stopper until the surface of the second conductive layer is exposed; and forming a silicide layer on the exposed second conductive layer and the common source line.

摘要翻译： 提供一种用于制造非易失性存储器件的方法。 用于制造非易失性存储器件的方法包括以下步骤：形成栅极图案，其中第一导电层用作浮置栅极，第二导电层用作控制栅极，第一导电层，电介质 层，第二导电层依次层叠在半导体基板上; 在栅极图案和半导体衬底上形成抛光止动件; 在抛光停止器上形成层间绝缘层; 通过蚀刻层间绝缘层的一部分和抛光止挡件的一部分，并将导电材料沉积到蚀刻部分，形成公共源极线（CSL）; 平面化公共源极线和层间绝缘层，直到抛光止动器的表面露出; 部分地回蚀刻抛光止动件，直到第二导电层的表面露出; 以及在所述暴露的第二导电层和所述公共源极线上形成硅化物层。

公开(公告)号：US6080673A

公开(公告)日：2000-06-27

申请号：US10329

申请日：1998-01-21

申请人： Yong-sun Ko ,  Chang-ki Hong

发明人： Yong-sun Ko ,  Chang-ki Hong

IPC分类号： C09K3/14 ,  B24B57/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/302

CPC分类号： H01L21/02024 ,  B24B37/04 ,  B24B57/02

摘要： Methods for manufacturing microelectronic using chemical mechanical polishing (CMP) comprises providing wafers wetted with deionized water mixtures having first pHs, and performing CMP on the wetted wafers while applying polishing slurries having second pHs thereto. In accordance with the invention, the first pHs are substantially equal to the second pHs.

摘要翻译： 使用化学机械抛光（CMP）制造微电子的方法包括提供用具有第一pH的去离子水混合物润湿的晶片，并在润湿的晶片上执行CMP，同时施加具有第二pH的抛光浆料。 根据本发明，第一pH基本上等于第二pH。