公开(公告)号：US07425509B2

公开(公告)日：2008-09-16

申请号：US10539532

申请日：2003-12-16

申请人： Maud Vinet ,  Simon Deleonibus ,  Bernard Previtali ,  Gilles Fanget

发明人： Maud Vinet ,  Simon Deleonibus ,  Bernard Previtali ,  Gilles Fanget

IPC分类号： H01L21/311

CPC分类号： H01L21/2007 ,  H01L23/544 ,  H01L27/1266 ,  H01L29/66772 ,  H01L29/78648 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for forming patterns which are aligned on either side of a thin film deposited on a substrate. The method includes depositing a first pattern layer on the thin film which may occur before or after the local etching of the thin film to form a first marking. The method includes etching the first pattern layer in order to form a first pattern and depositing a first bonding layer for covering the first marking and the first pattern. The method may include suppressing the substrate as well as etching the first bonding layer to form a second marking at the location of the first marking. The method includes depositing a second pattern layer, and etching the second pattern layer to form the second pattern.

摘要翻译： 一种形成图案的方法，其在沉积在基底上的薄膜的任一侧上排列。 该方法包括在薄膜上沉积第一图案层，该第一图案层可在薄膜的局部蚀刻之前或之后发生以形成第一标记。 该方法包括蚀刻第一图案层以形成第一图案并沉积用于覆盖第一标记和第一图案的第一粘合层。 该方法可以包括抑制衬底以及蚀刻第一结合层以在第一标记的位置处形成第二标记。 该方法包括沉积第二图案层，并蚀刻第二图案层以形成第二图案。

公开(公告)号：US20060014333A1

公开(公告)日：2006-01-19

申请号：US11178337

申请日：2005-07-12

申请人： Jean-Charles Barbe ,  Maud Vinet ,  Beatrice Drevet ,  Carine Jahan

发明人： Jean-Charles Barbe ,  Maud Vinet ,  Beatrice Drevet ,  Carine Jahan

IPC分类号： H01L21/84 ,  H01L21/44 ,  H01L21/20

CPC分类号： H01L21/78 ,  H01L21/76205 ,  H01L21/76281 ,  H01L21/84 ,  H01L21/86

摘要： The invention relates to a thin film having a thickness of less than 10 nm, made of oxidizable semi-conductor material and patterned in the form of patterns. To prevent the dewetting phenomenon of said patterns, lateral oxidized zones are arranged at the periphery of each pattern of the thin film so as to form an anchoring. This anchoring can be achieved by forming an oxide layer over the whole of the thin film and then depositing a nitride layer. Then the nitride and oxide layers and the thin film are patterned and the thin film is laterally oxidized so that each pattern of the thin film comprises, at the periphery thereof, an oxidized zone of predetermined width. The nitride and oxide layers are then removed so as to release the patterns oxidized at their periphery.