公开(公告)号：US06636542B1

公开(公告)日：2003-10-21

申请号：US09250305

申请日：1999-02-16

申请人： Nobuaki Ueki

发明人： Nobuaki Ueki

IPC分类号： H01S500

CPC分类号： H01S5/423 ,  H01S5/18311 ,  H01S5/1833 ,  H01S5/18338 ,  H01S5/1835 ,  H01S5/18355

摘要： A surface emitting semiconductor laser and a method for manufacturing a surface emitting semiconductor laser array which are capable of controlling the polarization plane of a laser beam in constant direction and obtaining a low threshold current are provided. The surface emitting semiconductor laser is provided with a first reflection mirror layer of the first conduction type formed on the main plane of a semiconductor substrate, an active layer having a quantum well laminated above the first reflection mirror layer, a post having a second reflection mirror layer of the second conduction type different from the first conduction type for constituting an resonator structure together with the first reflection mirror, and plurality of peripheral high resistance layers having the periphery of high resistance inserted between the first reflection mirror layer and the second reflection mirror layer, and which plurality of peripheral high resistance layers are different from each other in proportion of non-high resistance in the plane parallel to the main plane of the semiconductor substrate.

摘要翻译： 提供了能够在恒定方向上控制激光束的偏振面并获得低阈值电流的表面发射半导体激光器和制造表面发射半导体激光器阵列的方法。 表面发射半导体激光器设置有形成在半导体衬底的主平面上的第一导电类型的第一反射镜层，具有在第一反射镜层上方层叠的量子阱的有源层，具有第二反射镜 与第一导电类型不同的第二导电类型的层与第一反射镜一起构成谐振器结构，并且具有插入在第一反射镜层和第二反射镜层之间的具有高电阻外围的多个外围高电阻层 并且多个周边高电阻层在与半导体基板的主平面平行的平面中的非高电阻的比例彼此不同。