摘要:
A vertical-cavity surface-emitting laser (VCSEL) may include a substrate, a first mirror structure, and a cavity region to generate light. The cavity region may cause a resonance wavelength of a first portion of the light and a resonance wavelength of a second portion of the light to be offset from a gain peak of the VCSEL, where the first portion has a first polarization and the second portion has a second polarization, and an offset of the resonance wavelength of the first portion is different from an offset of the resonance wavelength of the second portion. The VCSEL may include a confinement aperture that has an asymmetric shape to cause spectral separation of the resonance wavelength of the first portion and the resonance wavelength of the second portion. The VCSEL may include a second mirror structure and one or more layers that form an output aperture.
摘要:
The embodiment relates to a surface emitting laser device and a light emitting device including the same. The surface-emitting laser device according to the embodiment includes a first reflective layer, an active region disposed on the first reflective layer, a plurality of aperture regions disposed on the active region, including an aperture and an insulating region, a second reflective layer disposed on the aperture region, and a first electrode and a second electrode electrically connected to the first reflective layer and the second reflective layer, respectively. In the aperture region, an outer periphery of the insulating region may have a circular shape, and an outer periphery of the aperture may have a polygonal shape.
摘要:
A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.
摘要:
A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.
摘要:
A vertical cavity surface emitting laser includes: a substrate; a laminated body which is provided over the substrate; an electrode of which at least a portion is provided over the laminated body; and a pad which is connected to the electrode, wherein the laminated body includes a first mirror layer provided over the substrate, an active layer provided over the first mirror layer, and a second mirror layer provided over the active layer, in a plan view, the laminated body includes a first distortion imparting portion, a second distortion imparting portion, and a resonance portion which is provided between the first distortion imparting portion and the second distortion imparting portion and resonates light generated in the active layer, and in the plan view, the pad is provided in a position that is not overlapped with at least one of the first distortion imparting portion and the second distortion imparting portion.
摘要:
A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.
摘要:
A vertical cavity surface emitting laser includes: a substrate; and a laminated body which is provided over the substrate, wherein the laminated body includes a first mirror layer, an active layer, and a second mirror layer, in a plan view, the laminated body includes a first distortion imparting portion, a second distortion imparting portion, and a resonance portion which is provided between the first distortion imparting portion and the second distortion imparting portion and resonates light generated by the active layer, and an angle formed by a side surface of the first distortion imparting portion and an upper surface of the substrate, and an angle formed by a side surface of the second distortion imparting portion and the upper surface of the substrate are greater than an angle formed by a side surface of the resonance portion and the upper surface of the substrate.
摘要:
A method of manufacturing a surface-emitting laser element having a light-emitting mesa structure with an emitting area including a high-reflectance portion and a low-reflectance portion includes forming a layered body that includes a lower reflecting mirror, a cavity structure, and an upper reflecting mirror on a substrate; forming a first area on an upper surface of the layered body; forming a second area having the same size as the first area on the upper surface of the layered body; forming a light-emitting mesa structure and a monitoring-mesa structure by etching the first area and the second area, respectively; forming a confinement structure including a current passage area surrounded by an oxide in the light-emitting mesa structure and the monitoring-mesa structure; and measuring the size of the current passage area of the monitoring-mesa structure.
摘要:
A VCSEL includes a grating layer configured with a non-periodic, sub-wavelength grating, in which the non-periodic, sub-wavelength grating includes at least one first section configured to have a relatively low reflection coefficient and at least one second section configured to have a relatively high reflection coefficient to cause light to be reflected in a predetermined, non-Gaussian, spatial mode across the sub-wavelength grating. The VCSEL also includes a reflective layer and a light emitting layer disposed between the grating layer and the reflector, in which the sub-wavelength grating and the reflector form a resonant cavity.
摘要:
A surface emitting laser having a mesa structure includes an off-orientation substrate, a bottom reflection mirror, an active layer, a current confinement layer, a top reflection mirror, and a surface-relief structure. The central axis of a high-reflectivity region of the surface-relief structure and the central axis of the mesa structure do not coincide with each other.