公开(公告)号：US5929368A

公开(公告)日：1999-07-27

申请号：US762262

申请日：1996-12-09

申请人： David W. Ewick ,  Paul N. Marshall ,  Kenneth A. Rode ,  Thomas C. Tseka ,  Brendan M. Walsh

发明人： David W. Ewick ,  Paul N. Marshall ,  Kenneth A. Rode ,  Thomas C. Tseka ,  Brendan M. Walsh

IPC分类号： F42B3/13 ,  F42B3/12 ,  F42C11/06 ,  H03K17/687 ,  F42D1/055 ,  H03K17/567

CPC分类号： F42B3/122 ,  F42B3/121 ,  F42C11/06

摘要： An electronic delay circuit (10) for use in a detonator (100) has a switching circuit (20) and a timer circuit (22). Switching circuit (20) controls the flow of a stored charge of electrical energy from a storage capacitor (12) to a bridge initiation element such as a semiconductor bridge (18) or a tungsten bridge. The timing of the release of this energy is controlled by timer circuit (22). Switching circuit (20) is an integrated, dielectrically isolated, bipolar CMOS (DI BiCMOS) circuit, whereas timer circuit (22) is a conventional CMOS circuit. The use of a DI BiCMOS switching circuit allows for greater efficiency of energy transfer from the storage capacitor (12) to the semiconductor bridge (18) than has previously been attained.

摘要翻译： 一种用于雷管（100）的电子延迟电路（10）具有开关电路（20）和定时电路（22）。 开关电路（20）控制来自存储电容器（12）的电能的存储电荷流到诸如半导体电桥（18）或钨桥的桥接起始元件。 释放该能量的时间由定时器电路（22）控制。 开关电路（20）是集成的介电隔离双极CMOS（DI BiCMOS）电路，而定时器电路（22）是传统的CMOS电路。 使用DI BiCMOS开关电路允许比先前已经获得的从存储电容器（12）到半导体电桥（18）的更大的能量传输效率。

公开(公告)号：US5905226A

公开(公告)日：1999-05-18

申请号：US970127

申请日：1997-11-13

申请人： Thomas A. Baginski

发明人： Thomas A. Baginski

IPC分类号： F42B3/12 ,  F42B3/13 ,  F42B3/18 ,  F42B3/182

CPC分类号： F42B3/182 ,  F42B3/13 ,  F42B3/18

摘要： An electro-explosive device has two serpentine resistors fabricated on a thermally conductive substrate with the resistors being interconnected by a central bridge element. The resistance of the bridge element is much lower than that of the serpentine resistors and the serpentine resistors have a much larger surface area to volume ratio. A layer of zirconium is placed on the bridge element and explodes into a plasma along with the bridge element in order to ignite a pyrotechnic compound. The resistance of the bridge element increases with temperature whereby the bridge element receives more of the energy from the applied signal as the temperature increases. The EED is insensitive to coupled RF energy and to an electrostatic discharge since most of the energy from these stray signals is directed to the serpentine resistors and not to the bridge element. In another embodiment, two of the resistors are metal-oxide phase variable resistances and a third resistor is formed from a bowtie-shaped layer of zirconium. The resistances through the metal-oxide phase layers decrease with signal intensity whereby the zirconium can receive most of the energy from a high intensity firing signal. A shunting element, which may be placed across an EED, has a bowtie-shaped conductive layer formed on a substrate. The conductive layer explodes in a plasma above a certain signal intensity. The shunting element may comprise another type of device, such as a diode, capacitor, etc.

摘要翻译： 电爆炸装置具有在导热基板上制造的两个蛇形电阻，电阻器通过中心桥接元件相互连接。 桥元件的电阻远低于蛇形电阻器的电阻，蛇形电阻器具有大得多的表面积与体积比。 一层锆被放置在桥元件上并与桥元件一起爆炸成等离子体，以点燃烟火化合物。 桥接元件的电阻随温度升高，随着温度升高，桥接元件从施加的信号接收更多的能量。 EED对耦合的RF能量和静电放电不敏感，因为这些杂散信号的大部分能量被引导到蛇形电阻器而不是针对桥接元件。 在另一个实施例中，两个电阻器是金属氧化物相位可变电阻，第三电阻器是由一个形状为锆的层形成的。 通过信号强度，通过金属氧化物相层的电阻降低，由此锆可以从高强度触发信号接收大部分能量。 可以放置在EED上的分流元件具有形成在基板上的弓形导电层。 导电层在某种信号强度以上的等离子体中爆炸。 分流元件可以包括另一类型的器件，例如二极管，电容器等

公开(公告)号：US5831203A

公开(公告)日：1998-11-03

申请号：US812662

申请日：1997-03-07

申请人： David W. Ewick

发明人： David W. Ewick

IPC分类号： F42B3/13 ,  F42C19/08 ,  F42D1/045 ,  F42C19/12

CPC分类号： F42B3/10 ,  F42B3/13

摘要： A detonator (10) contains an SCB initiator assembly (35) in initiation relation to an ignition charge (18). The SCB initiator assembly (35) contains an initiator element (36) having a bridge (60) of semiconductor material between two conductive lands (62a, 62b). The bridge (60) provides a resistance of at least about 50 ohms and has a volume between 48,600 cubic microns and 600,000 cubic microns with a typical thickness of two microns. A firing current of more than 200 milliamp provided to the initiator assembly (35) via input leads (26a, 26b) causes the bridge (60) to initiate the ignition charge (18).

摘要翻译： 雷管（10）包含与点火装料（18）起始关系的SCB引发器组件（35）。 SCB引发器组件（35）包含具有在两个导电焊盘（62a，62b）之间的半导体材料的桥（60）的引发元件（36）。 桥（60）提供至少约50欧姆的电阻，并且具有48,600立方微米至600,000立方微米的体积，典型的厚度为2微米。 经由输入引线（26a，26b）提供给引发器组件（35）的超过200毫安的点火电流使得桥（60）启动点火充电（18）。

公开(公告)号：US5682008A

公开(公告)日：1997-10-28

申请号：US446974

申请日：1995-05-22

申请人： Shmuel Chervinsky ,  Michael Avinor

发明人： Shmuel Chervinsky ,  Michael Avinor

IPC分类号： F42B3/13

CPC分类号： F42B3/13

摘要： A monolithic semiconductor igniter for igniting a charge of explosive material. The igniter includes a semiconductor substrate, and one or more fuse which is diffused in the semiconductor substrate such that the fuse ignites the charge when an electrical current is passed through it. Also provided is a process for manufacturing a monolithic semiconductor igniter. The process includes providing a semiconductor substrate, and diffusing one or more fuses in the semiconductor substrate. An additional embodiment provides an igniter with multiple sawtooth bridge elements. The resistance of this igniter may be adjusted by cutting individual bridge elements.

摘要翻译： 用于点燃炸药的装置的单片半导体点火器。 点火器包括半导体衬底和一个或多个在半导体衬底中扩散的熔丝，使得熔断器在电流通过时点燃电荷。 还提供了制造单片半导体点火器的方法。 该方法包括提供半导体衬底，并且扩散半导体衬底中的一个或多个保险丝。 附加实施例提供具有多个锯齿波桥元件的点火器。 该点火器的电阻可以通过切割单个桥接元件来调节。

公开(公告)号：US5309841A

公开(公告)日：1994-05-10

申请号：US996745

申请日：1992-12-24

申请人： J. Keith Hartman ,  Carroll B. McCampbell

发明人： J. Keith Hartman ,  Carroll B. McCampbell

IPC分类号： F42B3/13 ,  F42B3/182

CPC分类号： F42B3/13 ,  H01L23/60 ,  H01L2924/0002

摘要： An integrated circuit bridge comprises a substrate of non-electrically conductive material and a semiconductor layer on the substrate. First and second metal lands form contacts of the semiconductor bridge. An explosive charge bridges a gap between the metal lands. The lands, gap, semiconductor bridge, and charge are dimensioned and arranged so that in response to a current equal to or in excess of a predetermined level having a duration equal to or in excess of a predetermined value being applied across the gap, a plasma having sufficient energy to energize the explosive is formed in the gap. The predetermined current has a predetermined minimum firing voltage associated with it. The bridge is one of a lot having a firing voltage standard deviation of about 0.05 volts. Premature energization of the explosive by electrostatic discharge and voltages greater than the firing voltage and by AC induced voltages is prevented by connecting a zener diode across the first and second lands. The zener diode is chosen to conduct in the backward direction in response to a positive voltage of about 1.1 times the predetermined minimum firing voltage being applied across it. The bridge comprises a tungsten layer that extends across the gap on the semiconductor layer. The lands have a resistivity much smaller than that of the tungsten layer.

摘要翻译： 集成电路桥包括非导电材料的衬底和衬底上的半导体层。 第一和第二金属焊盘形成半导体桥接器。 爆炸装置桥接金属焊盘之间的间隙。 尺寸和布置尺寸和布置，使得响应于等于或超过具有等于或超过在间隙上施加的预定值的持续时间的预定水平的电流的等离子体，等离子体 在间隙中形成具有足够的能量来激励炸药的能量。 预定电流具有与其相关联的预定的最小点火电压。 该桥是大约0.05伏特的点火电压标准偏差之一。 通过在第一和第二焊盘上连接齐纳二极管来防止通过静电放电使爆炸物过早通电并且大于触发电压和AC感应电压的电压。 选择齐纳二极管以响应于施加在其上的预定最小点火电压的大约1.1倍的正电压而在反向方向上导通。 该桥包括穿过半导体层上的间隙延伸的钨层。 土地的电阻率远远小于钨层的电阻率。

公开(公告)号：US5179248A

公开(公告)日：1993-01-12

申请号：US771983

申请日：1991-10-08

申请人： J. Keith Hartman ,  Carroll B. McCampbell

发明人： J. Keith Hartman ,  Carroll B. McCampbell

IPC分类号： F42B3/13

CPC分类号： F42B3/13 ,  H01L23/60 ,  H01L2924/0002

摘要： A semiconductor bridge comprises a substrate of non-electrically conductive material, a doped semiconductor layer on the substrate, as well as first and second metal lands forming ohmic contacts on the doped semiconductor layer. An explosive charge bridges a gap between the metal lands across the doped semiconductor layer. The lands, gap, semiconductor layer, and charge are dimensioned and arranged so that in response to a current equal to or in excess of a predetermined level having a duration equal to or in excess of a predetermined value being applied across the gap, a plasma having sufficient energy to energize the explosive is formed in the gap. The predetermined current has a predetermined minimum firing voltage associated with it. The semiconductor bridge is one of a lot having a firing voltage standard deviation of about 0.05 volts. Premature energization of the explosive by electrostatic discharge and voltages greater than the firing voltage and by AC induced voltages is prevented by connecting a zener diode across the first and second lands. The zener diode is chosen to conduct in the backward direction in response to a positive voltage of about 1.1 times the predetermined minimum firing voltage being applied across it.

摘要翻译： 半导体桥包括非导电材料的衬底，衬底上的掺杂半导体层，以及在掺杂半导体层上形成欧姆接触的第一和第二金属焊盘。 爆炸电荷桥接跨越掺杂半导体层的金属焊盘之间的间隙。 这些焊盘，间隙，半导体层和电荷的尺寸和尺寸被设计成使得响应于等于或超过具有等于或超过跨越间隙施加的预定值的持续时间的预定电平的电流，等离子体 在间隙中形成具有足够的能量来激励炸药的能量。 预定电流具有与其相关联的预定的最小点火电压。 半导体桥是大约0.05伏特的点火电压标准偏差之一。 通过在第一和第二焊盘上连接齐纳二极管来防止通过静电放电使爆炸物过早通电并且大于触发电压和AC感应电压的电压。 选择齐纳二极管以响应于施加在其上的预定最小点火电压的大约1.1倍的正电压而在反向方向上导通。

公开(公告)号：US5094167A

公开(公告)日：1992-03-10

申请号：US649116

申请日：1991-01-28

申请人： Edward L. Hendley, Jr.

发明人： Edward L. Hendley, Jr.

IPC分类号： E21B43/1185 ,  F42B3/13

CPC分类号： F42B3/13 ,  E21B43/1185

摘要： A new shape charge includes an integrated circuit semiconductor bridge detonating device responsive to ordinary current for triggering a switch in the detonating device and igniting a pyrotechnic composition on a small integrated circuit semiconductor bridge in the detonation device in response to the current, thereby igniting an explosive material in the shape charge and firing the shape charge. Since the integrated circuit detonating device is utilized, responsive to ordinary current for detonation, prior art detonating cords are not needed. A plurality of shape charges in a perforating gun are fired substantially simultaneously using the new shape charge of the present invention.

摘要翻译： 新的形状电荷包括响应于普通电流的集成电路半导体桥引爆装置，用于触发引爆装置中的开关，并且响应于电流在爆震装置中的小集成电路半导体电桥上点燃烟火组合物，从而点燃爆炸物 材料中的形状充电和点火形状充电。 由于利用集成电路引爆装置，响应于普通电流进行爆震，因此不需要现有技术的引爆线。 使用本发明的新形状电荷基本上同时地在射孔枪中形成多个形状电荷。

公开(公告)号：US5029529A

公开(公告)日：1991-07-09

申请号：US412252

申请日：1989-09-25

申请人： Frank N. Mandigo ,  George C. Mei ,  Julius C. Fister

发明人： Frank N. Mandigo ,  George C. Mei ,  Julius C. Fister

IPC分类号： F42B3/13

CPC分类号： F42B3/13

摘要： The present invention is direct to primer housings to secure a semiconductor bridge device in close proximity to an energetic charge. The primer housings are formed from an electrically conductive alloy and contain a dielectric medium disposed between components to maintain electrical isolation. The housings are characterized by high ductility to resist fracture during assembly or handling. In certain embodiments, one or both lead wires are removed to reduce the potential for lead wire breakage or separation.

摘要翻译： 本发明直接用于底漆外壳以将半导体桥接器件紧固在能量电荷附近。 底漆外壳由导电合金形成并且包含设置在部件之间的电介质以保持电隔离。 这些外壳的特征在于在组装或处理期间具有高的延展性以抵抗断裂。 在某些实施例中，去除一根或两根引线以减少引线断线或分离的可能性。

公开(公告)号：US4862803A

公开(公告)日：1989-09-05

申请号：US261333

申请日：1988-10-24

申请人： Eldon Nerheim ,  Dave Hoff

发明人： Eldon Nerheim ,  Dave Hoff

IPC分类号： F42B3/13

CPC分类号： F42B3/13

摘要： A detonator device for a primary or secondary explosive comprising an integrated circuit consisting of a silicon wafer substrate on which an epitaxial layer of a desired thickness is first grown, followed by a covering insulating oxide layer. Metal contacts are deposited on the oxide layer in a photolithographic masking process to form a regular pattern of contact pairs. These contact pairs are joined together by a bridge element which may be made from the same metal as the contacts, a higher density metal, from heavily doped polysilicon. The substrate is back-etched beneath the bridge members up to the epitaxial layer to form a barrel through which the flyer may travel. After the wafer is diced, the individual dies have a counter mass face-plate bonded atop the bridge and contacts.

摘要翻译： 一种用于初级或次级炸药的雷管装置，包括由硅晶片衬底组成的集成电路，其上首先生长期望厚度的外延层，之后是覆盖绝缘氧化物层。 金属触点在光刻掩模过程中沉积在氧化物层上以形成规则的接触对图案。 这些接触对通过桥接元件连接在一起，该桥接元件可以由与重掺杂多晶硅的触点相同的金属制成，即高密度的金属。 衬底在桥构件之下被背蚀刻直到外延层，以形成传送器可以通过其移动的筒。 在晶片切割之后，各个模具具有接合在桥接器和接触件上方的反质量面板。

公开(公告)号：US4840122A

公开(公告)日：1989-06-20

申请号：US182378

申请日：1988-04-18

申请人： Eldon Nerheim

发明人： Eldon Nerheim

IPC分类号： F42B3/13 ,  H01T2/02

CPC分类号： F42B3/13 ,  H01T2/02

摘要： A switch device for one-time use in conducting very high currents comprising a silicon substrate on which is deposited a amorphous silicon or polysilicon strip extending as a bridge between first and second spaced-apart metal contacts deposited on the silicon substrate. Also deposited on the same substrate on opposite sides of the bridge and spaced from it are a set of high voltage contacts. When a high voltage is applied across the contacts, no current flows until a trigger current is made to flow through the bridge, the trigger current being sufficiently large to vaporize the bridge creating a plasma cloud. The plasma, being highly conductive, allows a very large current to flow between the high voltage contacts. The device of the present invention finds special application as part of a detonation system for high explosive ammunitions. This specification discloses various modifications to the above structure to achieve desired performance characteristics.

摘要翻译： 一种用于一次性使用的开关器件，用于传导非常高的电流，包括硅衬底，在衬底上沉积有非晶硅或多晶硅条，其作为在沉积在硅衬底上的第一和第二间隔金属触点之间的桥接延伸。 还沉积在桥的相对侧上的相同基板上并与之隔开的是一组高压触点。 当跨越触点施加高电压时，没有电流流过，直到使触发电流流过桥，触发电流足够大以使桥梁蒸发，产生等离子体云。 高导电性的等离子体允许非常大的电流在高压触点之间流动。 本发明的装置作为用于高爆炸弹药的爆炸系统的一部分而特别应用。 本说明书公开了对上述结构的各种修改以实现期望的性能特征。